J. Semicond. > Volume 31 > Issue 5 > Article Number: 054004

Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions

Lan Bo , Guo Qi , Sun Jing , Cui Jiangwei , Li Maoshun , Chen Rui , Fei Wuxiong and Zhao Yun

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Abstract: The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.

Key words: PMOSFETs


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Lan B, Guo Q, Sun J, Cui J W, Li M S, Chen R, Fei W X, Zhao Y. Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions[J]. J. Semicond., 2010, 31(5): 054004. doi: 10.1088/1674-4926/31/5/054004.

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Manuscript received: 18 August 2015 Manuscript revised: 25 November 2009 Online: Published: 01 May 2010

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