J. Semicond. > Volume 31 > Issue 5 > Article Number: 055007

A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

Wang Wei , Huang Beiju , Dong Zan , Guo Weilian and Chen Hongda

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Abstract: A MOS-NDR (negative differential resistance) transistor which is composed of four n-channel metal–oxide–semiconductor field effect transistors (nMOSFETs) is fabricated in standard 0.35 μm CMOS technology. This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD (resonant tunneling diode) in current–voltage characteristics. At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor, a flexible logic circuit is realized in this work, which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor. It turns out that MOS- NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.

Key words: MOS-NDR CMOS resonant tunneling diode monostable-bistable transition logic element flexible logic gate

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Wang W, Huang B J, Dong Z, Guo W L, Chen H D. A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology[J]. J. Semicond., 2010, 31(5): 055007. doi: 10.1088/1674-4926/31/5/055007.

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History

Manuscript received: 18 August 2015 Manuscript revised: 04 January 2010 Online: Published: 01 May 2010

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