J. Semicond. > Volume 31 > Issue 6 > Article Number: 065009

Rotary traveling-wave oscillator design using 0.18 μm CMOS

Hu Xinyi , Dai Yayue , Zhang Huafeng , Zhou Jinfang and Chen Kangsheng

+ Author Affiliations + Find other works by these authors


Abstract: A rotary traveling-wave oscillator (RTWO) targeted at 5.8 GHz band operation is designed and fabricated using standard 0.18 μm CMOS technology. Both simulation and measurement results are presented. The chip size including pads is 1.5×1.5 mm2. The measured output power at a frequency of 5.285 GHz is 6.68 dBm, with a phase noise of –102 dBc/Hz at 1 MHz offset from the carrier.

Key words: rotary traveling-wave oscillators multiphase oscillators CMOS


Yu Yunfeng, Yue Jianlian, Xiao Shimao, Zhuang Haixiao, Ma Chengyan, Ye Tianchun. A low-power CMOS frequency synthesizer for GPS receivers. J. Semicond., 2010, 31(6): 065012. doi: 10.1088/1674-4926/31/6/065012


Zhu Zhangming, Liu Lianxi, Yang Yintang, Lei Han. A high efficiency PWM CMOS class-D audio power amplifier. J. Semicond., 2009, 30(2): 025001. doi: 10.1088/1674-4926/30/2/025001


Wang Wei, Huang Beiju, Dong Zan, Guo Weilian, Chen Hongda. A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology. J. Semicond., 2010, 31(5): 055007. doi: 10.1088/1674-4926/31/5/055007


Yu Bo, Wang Yuan, Jia Song, Zhang Ganggang. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001


Wang Keping, Wang Zhigong, Lei Xuemei. Noise-canceling and IP3 improved CMOS RF front-end for DRM/DAB/DVB-H applications. J. Semicond., 2010, 31(2): 025006. doi: 10.1088/1674-4926/31/2/025006


Ju Hao, Zhou Yumei, Jiao Yishu. A low power 3.125 Gbps CMOS analog equalizer for serial links. J. Semicond., 2010, 31(11): 115003. doi: 10.1088/1674-4926/31/11/115003


Xia Jun, Wang Zhigong, Wu Xiushan, Li Wei. Analysis and Modeling of Broadband CMOS Monolithic Balun up to Millimeter-Wave Frequencies. J. Semicond., 2008, 29(3): 467.


Liu Haitao, Meng Qiao, Wang Zhigong, Tang Kai. Effect of a reset-MOSFET in a high-speed comparator. J. Semicond., 2009, 30(7): 075002. doi: 10.1088/1674-4926/30/7/075002


Wang Weizhi, Jin Dongming. A Rail-to-Rail Input/Output Amplifier Using Common-GateFrequency Compensation. J. Semicond., 2006, 27(11): 2025.


Chen Pufeng, Zhang Haiying, Ye Tianchun. A 1.5 V 7.656 GHz PLL with I/Q outputs for a UWB synthesizer. J. Semicond., 2010, 31(6): 065001. doi: 10.1088/1674-4926/31/6/065001


Zheng Yongzheng, Li Weinan, Xia Lingli, Huang Yumei, Hong Zhiliang. A 3.96 GHz phase-locked loop for mode-1 MB-OFDM UWB hopping carrier generation. J. Semicond., 2009, 30(7): 075003. doi: 10.1088/1674-4926/30/7/075003


Wang Keping, Wang Zhigong, Zhou Jianzheng, Lei Xuemei, Zhou Mingzhu. A novel low-noise linear-in-dB intermediate frequency variable-gain amplifier for DRM/DAB tuners. J. Semicond., 2009, 30(3): 035002. doi: 10.1088/1674-4926/30/3/035002


He Wei, Zhang Zhengxuan. SOI Device Design for SEU Hardening. J. Semicond., 2006, 27(S1): 291.


Yang Yi, Gao Zhuo, Yang Liqiong, Huang Lingyi, Hu Weiwu. Design and analysis of a UWB low-noise amplifier in the 0.18 μm CMOS process. J. Semicond., 2009, 30(1): 015001. doi: 10.1088/1674-4926/30/1/015001


Guo Feng, Li Zhiqun, Chen Dongdong, Li Haisong, Wang Zhigong. Design of a Wideband CMOS Variable Gain Amplifier. J. Semicond., 2007, 28(12): 1967.


Zhang Fengtian, Tang Zhen'an, Wang Jiaqi, Yu Jun. A Monolithic Integrated CMOS Thermal Vacuum Sensor. J. Semicond., 2008, 29(6): 1103.


Zhu Haobo, Mao Luhong, Yu Changliang, Ma Liyuan. Sensitivity Design for a CMOS Optoelectronic Integrated Circuit Receiver. J. Semicond., 2007, 28(5): 676.


Han Shuguang, Chi Baoyong, Wang Zhihua. A Novel Offset-Cancellation Technique for Low Voltage CMOS Differential Amplifiers. J. Semicond., 2006, 27(5): 778.


Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers. J. Semicond., 2008, 29(6): 1044.


Hu Huiyong, Zhang Heming, Jia Xinzhang, Dai Xianying, Xuan Rongxi. Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits. J. Semicond., 2007, 28(5): 681.


Advanced Search >>


Hu X Y, Dai Y Y, Zhang H F, Zhou J F, Chen K S. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. J. Semicond., 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009.

Export: BibTex EndNote

Article Metrics

Article views: 2140 Times PDF downloads: 2193 Times Cited by: 0 Times


Manuscript received: 18 August 2015 Manuscript revised: 06 February 2010 Online: Published: 01 June 2010

Email This Article

User name: