J. Semicond. > Volume 31 > Issue 6 > Article Number: 065009

Rotary traveling-wave oscillator design using 0.18 μm CMOS

Hu Xinyi , Dai Yayue , Zhang Huafeng , Zhou Jinfang and Chen Kangsheng

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Abstract: A rotary traveling-wave oscillator (RTWO) targeted at 5.8 GHz band operation is designed and fabricated using standard 0.18 μm CMOS technology. Both simulation and measurement results are presented. The chip size including pads is 1.5×1.5 mm2. The measured output power at a frequency of 5.285 GHz is 6.68 dBm, with a phase noise of –102 dBc/Hz at 1 MHz offset from the carrier.

Key words: rotary traveling-wave oscillators multiphase oscillators CMOS

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Hu X Y, Dai Y Y, Zhang H F, Zhou J F, Chen K S. Rotary traveling-wave oscillator design using 0.18 μm CMOS[J]. J. Semicond., 2010, 31(6): 065009. doi: 10.1088/1674-4926/31/6/065009.

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Manuscript received: 18 August 2015 Manuscript revised: 06 February 2010 Online: Published: 01 June 2010

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