J. Semicond. > Volume 31 > Issue 7 > Article Number: 074005

A revised approach to Schottky parameter extraction for GaN HEMT

Wang Xinhua , Zhao Miao , Liu Xinyu , Zheng Yingkui and Wei Ke

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Abstract: We carry out a thermal storage research on GaN HEMT at 350 oC for 48 h, and a recess phenomenon is observed in the low voltage section of Schottky forward characteristics. The decrease of 2DEG density will be responsible for the recess phenomenon. Because the conventional method is not suitable for this kind of curve, a revised approach is presented by analyzing the back-to-back Schottky junction energy band to extract Schottky parameters, which leads to a consistent fit effect.

Key words: AlGaN/GaN HEMT


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Wang X H, Zhao M, Liu X Y, Zheng Y K, Wei K. A revised approach to Schottky parameter extraction for GaN HEMT[J]. J. Semicond., 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005.

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Manuscript received: 18 August 2015 Manuscript revised: 24 February 2010 Online: Published: 01 July 2010

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