J. Semicond. > Volume 31 > Issue 7 > Article Number: 074008

120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT

Huang Jie , Guo Tianyi , Zhang Haiying , Xu Jingbo , Fu Xiaojun , Yang Hao and Niu Jiebin

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Abstract: 120 nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based high electron mobility transitions (HEMTs) are fabricated by a new T-shaped gate electron beam lithograph (EBL) technology, which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack. These devices also demonstrate excellent DC and RF characteristics: the transconductance, maximum saturation drain-to-source current, threshold voltage, maximum current gain frequency, and maximum power-gain cutoff frequency of InGaAs/InAlAs HEMTs is 520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz and 120 GHz, respectively. The material structure and all the device fabrication technology in this work were developed by our group.

Key words: HEMTInPInGaAs/InAlAs

[1]

Huang Jie, Guo Tianyi, Zhang Haiying, Xu Jingbo, Fu Xiaojun, Yang Hao, Niu Jiebin. Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT. J. Semicond., 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008

[2]

Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Niu Jiebin, Liu Xunchun. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency. J. Semicond., 2007, 28(12): 1864.

[3]

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Huang J, Guo T Y, Zhang H Y, Xu J B, Fu X J, Yang H, Niu J B. 120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT[J]. J. Semicond., 2010, 31(7): 074008. doi: 10.1088/1674-4926/31/7/074008.

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History

Manuscript received: 18 August 2015 Manuscript revised: 02 March 2010 Online: Published: 01 July 2010

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