J. Semicond. > Volume 31 > Issue 8 > Article Number: 082003

Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Zhu Huiwen , Liu Yongsong , Mao Lingfeng , Shen Jingqin , Zhu Zhiyan and Tang Weihua

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Abstract: Two SiO2/Si interface structures, which are described by the double bonded model (DBM) and the bridge oxygen model (BOM), have been theoretically studied via first-principle calculations. First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM. Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO2/Si interface structure described by DBM leads to a larger gate leakage current.

Key words: interface

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Zhu H W, Liu Y S, Mao L F, Shen J Q, Zhu Z Y, Tang W H. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. J. Semicond., 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003.

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Manuscript received: 18 August 2015 Manuscript revised: 29 March 2010 Online: Published: 01 August 2010

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