J. Semicond. > Volume 31 > Issue 8 > Article Number: 083005

Low-temperature deposition of transparent conducting Mn–W co-doped ZnO thin films

Zhang Huafu , Liu Hanfa , Lei Chengxin , Zhou Aiping and Yuan Changkun

+ Author Affilications + Find other works by these authors

PDF

Abstract: Mn–W co-doped ZnO (ZMWO) thin films with low resistivity and high transparency were successfully prepared on glass substrate by direct current (DC) magnetron sputtering at low temperature. The sputtering power was varied from 65 to 150 W. The crystallinity and resistivity of ZMWO films greatly depend on sputtering power while the optical transmittance and optical band gap are not sensitive to sputtering power. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. Considering the crystallinity and the electrical and optical properties, we suggest that the optimal sputtering power in this experiment is 90 W and, at this power, the ZMWO film has the lowest resistivity of 9.8 × 10-4 Ω.cm with a high transmittance of approximately 89% in the visible range.

Key words: Mn–W co-doped ZnO filmstransparent conducting filmsmagnetron sputteringsputtering power

[1]

Zhang Huafu, Yang Shugang, Liu Hanfa, Yuan Changkun. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering. J. Semicond., 2011, 32(4): 043002. doi: 10.1088/1674-4926/32/4/043002

[2]

Ma Quanbao, Zhu Liping, Ye Zhizhen, He Haiping, Wang Jingrui, Hu Shaohua, Zhao Binghui. Influence of Sputtering Pressure on the Properties of ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering. J. Semicond., 2007, 28(S1): 285.

[3]

Hong Li, Hongbin Pu, Chunlei Zheng, Zhiming Chen. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering. J. Semicond., 2015, 36(6): 063005. doi: 10.1088/1674-4926/36/6/063005

[4]

Wu Jiangyan, Yan Jinliang, Yue Wei, Li Ting. Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases. J. Semicond., 2012, 33(4): 043001. doi: 10.1088/1674-4926/33/4/043001

[5]

Toshihiro Miyata, Kyosuke Watanabe, Hiroki Tokunaga, Tadatsugu Minami. Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method. J. Semicond., 2019, 40(3): 032701. doi: 10.1088/1674-4926/40/3/032701

[6]

Zhang Jun, Xie Erqing, Fu Yujun, Li Hui, Shao Lexi. Influence of Substrate Temperature and Nitrogen Gas on Zinc Nitride Thin Films Prepared by RF Reactive Sputtering. J. Semicond., 2007, 28(8): 1173.

[7]

Said Benramache, Boubaker Benhaoua, Foued Chabane. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films. J. Semicond., 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001

[8]

Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering. J. Semicond., 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004

[9]

Chen Weidong, Feng Lianghuan, Lei Zhi, Zhang Jingquan, Wu Lili, Cai Wei, Cai Yaping, Yao Feifei, Li Wei, Li Bing, Zheng Jiagui. Growth of AlSb Polycrystalline Films by Magnetron Sputtering and Annealing. J. Semicond., 2006, 27(3): 541.

[10]

Zhang Huafu, Liu Hanfa, Zhou Aiping, Yuan Changkun. Influence of the distance between target and substrate on the properties of transparent conducting Al–Zr co-doped zinc oxide thin films. J. Semicond., 2009, 30(11): 113002. doi: 10.1088/1674-4926/30/11/113002

[11]

Xiao Qingquan, Xie Quan, Chen Qian, Zhao Kejie, Yu Zhiqiang, Shen Xiangqian. Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition. J. Semicond., 2011, 32(8): 082002. doi: 10.1088/1674-4926/32/8/082002

[12]

Junfei Shi, Chengyuan Dong, Wenjun Dai, Jie Wu, Yuting Chen, Runze Zhan. The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices. J. Semicond., 2013, 34(8): 084003. doi: 10.1088/1674-4926/34/8/084003

[13]

Li Jun, Yan Jinliang, Sun Xueqing, Li Kewei, Yang Chunxiu. Influence of Ag Layer Thickness on the Properties of ZnO/Ag/ZnO Films. J. Semicond., 2007, 28(9): 1402.

[14]

Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005

[15]

Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films. J. Semicond., 2006, 27(2): 345.

[16]

Zhifang Lei, Guangyu Chen, Shibin Gu, Lingling Dai, Rong Yang, Yuan Meng, Ted Guo, Liwei Li. Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications. J. Semicond., 2013, 34(6): 063004. doi: 10.1088/1674-4926/34/6/063004

[17]

Liu Hanfa, Zhang Huafu, Lei Chengxin, Yuan Changkun. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering. J. Semicond., 2009, 30(2): 023001. doi: 10.1088/1674-4926/30/2/023001

[18]

Ravindra Waykar, Amit Pawbake, Rupali Kulkarni, Ashok Jadhavar, Adinath Funde, Vaishali Waman, Rupesh Dewan, Habib Pathan, Sandesh Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering. J. Semicond., 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001

[19]

Li Ting, Yan Jinliang, Ding Xingwei, Zhang Liying. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2. J. Semicond., 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002

[20]

Yang Weifeng, Liu Zhuguang, Zhang Feng, Huang Huolin, Wu Zhengyun. Structural,Electrical,and Optical Properties of Transparent Conductive Al-Doped ZnO Films Prepared by RF Magnetron Sputtering. J. Semicond., 2008, 29(12): 2311.

Search

Advanced Search >>

GET CITATION

Zhang H F, Liu H F, Lei C X, Zhou A P, Yuan C K. Low-temperature deposition of transparent conducting Mn–W co-doped ZnO thin films[J]. J. Semicond., 2010, 31(8): 083005. doi: 10.1088/1674-4926/31/8/083005.

Export: BibTex EndNote

Article Metrics

Article views: 1653 Times PDF downloads: 10311 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: 05 April 2010 Online: Published: 01 August 2010

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误