J. Semicond. > Volume 31 > Issue 9 > Article Number: 092001

Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

Zhou Qisheng , Cao Juncheng , Qi Ming and Lei Xiaolin

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Abstract: We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes, using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τs is attributed to the enhancement of electron-phonon scattering with rising temperature. The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature, is produced, in agreement with recent experimental findings.

Key words: two-dimensional electron gas


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Zhou Q S, Cao J C, Qi M, Lei X L. Phonon-induced magnetoresistance oscillations in a high-mobility quantum well[J]. J. Semicond., 2010, 31(9): 092001. doi: 10.1088/1674-4926/31/9/092001.

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Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 2010

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