Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

Ali Ahaitouf; Abdelaziz Ahaitouf; Jean Paul Salvestrini; Hussein Srour

doi:10.1088/1674-4926/32/10/104002

Abstract: Based on current voltage (I-V_g) and capacitance voltage (C-V_g) measurements, a reliable procedure is proposed to determine the effective surface potential V_d.V_g/ in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-V_g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C-V_g, which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information.

Key words: Schottky diode, interface states, surface potential, ideality factor, barrier height, capacitance voltage, current measurements

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A Ahaitouf, A Ahaitouf, J P Salvestrini, H Srour. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP[J]. J. Semicond., 2011, 32(10): 104002. doi: 10.1088/1674-4926/32/10/104002.

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