J. Semicond. > Volume 32 > Issue 10 > Article Number: 104002

Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

Ali Ahaitouf , Abdelaziz Ahaitouf , Jean Paul Salvestrini and Hussein Srour

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Abstract: Based on current voltage (I-Vg) and capacitance voltage (C-Vg) measurements, a reliable procedure is proposed to determine the effective surface potential Vd.Vg/ in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg, which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information.

Key words: Schottky diode interface states surface potential ideality factor barrier height capacitance voltage current measurements


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A Ahaitouf, A Ahaitouf, J P Salvestrini, H Srour. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP[J]. J. Semicond., 2011, 32(10): 104002. doi: 10.1088/1674-4926/32/10/104002.

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Manuscript received: 03 December 2014 Manuscript revised: 14 June 2011 Online: Published: 01 October 2011

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