J. Semicond. > Volume 32 > Issue 2 > Article Number: 024004

Improved Nonlinear Model of HEMTs with Independent Transconductance Tail-Off Fitting

Liu Linsheng

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Abstract: In this paper, we present an improved large-signal device model of GaAs/ GaN HEMTs, amenable for use in the commercial nonlinear simulators. The proposed model includes a new exponential function to independently control the transconductance (Gm) compression/ tail-off behaviors. And the main advantage of this model is to provide a simple and coherent description of the bias-dependent drain current (I-V) that is valid in all regions of operation. All the aspects of the model are validated for 0.25-μm gate-lengths GaAs and GaN HEMT processes. The simulation results of DC/ Pulsed I-V, RF large-signal power and intermodulation distortion (IMD) products show an excellent agreement with the measured data.

Key words: large-signal model parameter extraction HEMT


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Liu L S. Improved Nonlinear Model of HEMTs with Independent Transconductance Tail-Off Fitting[J]. J. Semicond., 2011, 32(2): 024004. doi: 10.1088/1674-4926/32/2/024004.

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Manuscript received: 18 August 2015 Manuscript revised: 14 October 2010 Online: Published: 01 February 2011

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