J. Semicond. > Volume 32 > Issue 3 > Article Number: 034005

GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation

Chen Yiren , Song Hang , Li Dabing , Sun Xiaojuan , Li Zhiming , Jiang Hong and Miao Guoqing

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Abstract: Based on the principles of metal–semiconductor–metal Schottky barrier photodetectors (MSM-PD), using the carrier rate equations, the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process. By using the Pspice analytical function of Cadence soft on the model, the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed. The result shows that under the given UV power, the photocurrent increases and tends to become saturated gradually as the terminal voltage of the device increases, and that under different UV powers, the photocurrent increases with increasing incident power. Then the analysis of the relationship between the photocurrent and the terminal voltage under the different ratios of interdigital electrode space and width is carried out when the UV power is given. The results show that when the ratio of interdigital electrode space and width (L/W) equals 1, the photocurrent tends to be at a maximum.

Key words: MSM structuresimulationequivalent circuitultraviolet detector

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Chen Y R, Song H, Li D B, Sun X J, Li Z M, Jiang H, Miao G Q. GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation[J]. J. Semicond., 2011, 32(3): 034005. doi: 10.1088/1674-4926/32/3/034005.

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History

Manuscript received: 18 August 2015 Manuscript revised: 20 October 2010 Online: Published: 01 March 2011

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