J. Semicond. > Volume 32 > Issue 4 > Article Number: 043002

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Zhang Huafu , Yang Shugang , Liu Hanfa and Yuan Changkun

+ Author Affilications + Find other works by these authors


Abstract: Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm,sheet resistance of 6.8 \upOmega /口 and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

Key words: tungsten-doped zinc oxidetransparent conducting filmsmagnetron sputteringdeposition pressure


Zhang Huafu, Liu Hanfa, Lei Chengxin, Zhou Aiping, Yuan Changkun. Low-temperature deposition of transparent conducting Mn–W co-doped ZnO thin films. J. Semicond., 2010, 31(8): 083005. doi: 10.1088/1674-4926/31/8/083005


Ma Quanbao, Zhu Liping, Ye Zhizhen, He Haiping, Wang Jingrui, Hu Shaohua, Zhao Binghui. Influence of Sputtering Pressure on the Properties of ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering. J. Semicond., 2007, 28(S1): 285.


Said Benramache, Boubaker Benhaoua, Foued Chabane. Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films. J. Semicond., 2012, 33(9): 093001. doi: 10.1088/1674-4926/33/9/093001


Toshihiro Miyata, Kyosuke Watanabe, Hiroki Tokunaga, Tadatsugu Minami. Photovoltaic properties of Cu2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method. J. Semicond., 2019, 40(3): 032701. doi: 10.1088/1674-4926/40/3/032701


Zhang Jun, Xie Erqing, Fu Yujun, Li Hui, Shao Lexi. Influence of Substrate Temperature and Nitrogen Gas on Zinc Nitride Thin Films Prepared by RF Reactive Sputtering. J. Semicond., 2007, 28(8): 1173.


Zhang Huafu, Liu Hanfa, Zhou Aiping, Yuan Changkun. Influence of the distance between target and substrate on the properties of transparent conducting Al–Zr co-doped zinc oxide thin films. J. Semicond., 2009, 30(11): 113002. doi: 10.1088/1674-4926/30/11/113002


Xiao Qingquan, Xie Quan, Chen Qian, Zhao Kejie, Yu Zhiqiang, Shen Xiangqian. Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition. J. Semicond., 2011, 32(8): 082002. doi: 10.1088/1674-4926/32/8/082002


Hong Li, Hongbin Pu, Chunlei Zheng, Zhiming Chen. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering. J. Semicond., 2015, 36(6): 063005. doi: 10.1088/1674-4926/36/6/063005


Wu Jiangyan, Yan Jinliang, Yue Wei, Li Ting. Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases. J. Semicond., 2012, 33(4): 043001. doi: 10.1088/1674-4926/33/4/043001


Liu Hanfa, Zhang Huafu, Lei Chengxin, Yuan Changkun. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering. J. Semicond., 2009, 30(2): 023001. doi: 10.1088/1674-4926/30/2/023001


Zhifang Lei, Guangyu Chen, Shibin Gu, Lingling Dai, Rong Yang, Yuan Meng, Ted Guo, Liwei Li. Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications. J. Semicond., 2013, 34(6): 063004. doi: 10.1088/1674-4926/34/6/063004


Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering. J. Semicond., 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004


Chen Weidong, Feng Lianghuan, Lei Zhi, Zhang Jingquan, Wu Lili, Cai Wei, Cai Yaping, Yao Feifei, Li Wei, Li Bing, Zheng Jiagui. Growth of AlSb Polycrystalline Films by Magnetron Sputtering and Annealing. J. Semicond., 2006, 27(3): 541.


Jie Wu, Junfei Shi, Chengyuan Dong, Zhongfei Zou, Yuting Chen, Daxiang Zhou, Zhe Hu, Runze Zhan. Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors. J. Semicond., 2014, 35(1): 014003. doi: 10.1088/1674-4926/35/1/014003


Li Ting, Yan Jinliang, Ding Xingwei, Zhang Liying. Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2. J. Semicond., 2012, 33(1): 013002. doi: 10.1088/1674-4926/33/1/013002


Li Jun, Yan Jinliang, Sun Xueqing, Li Kewei, Yang Chunxiu. Influence of Ag Layer Thickness on the Properties of ZnO/Ag/ZnO Films. J. Semicond., 2007, 28(9): 1402.


Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005


Guo Hengqun, Lin Shangxin, Wang Qiming. Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films. J. Semicond., 2006, 27(2): 345.


Junfei Shi, Chengyuan Dong, Wenjun Dai, Jie Wu, Yuting Chen, Runze Zhan. The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices. J. Semicond., 2013, 34(8): 084003. doi: 10.1088/1674-4926/34/8/084003


Ravindra Waykar, Amit Pawbake, Rupali Kulkarni, Ashok Jadhavar, Adinath Funde, Vaishali Waman, Rupesh Dewan, Habib Pathan, Sandesh Jadkar. Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering. J. Semicond., 2016, 37(4): 043001. doi: 10.1088/1674-4926/37/4/043001


Advanced Search >>


Zhang H F, Yang S G, Liu H F, Yuan C K. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering[J]. J. Semicond., 2011, 32(4): 043002. doi: 10.1088/1674-4926/32/4/043002.

Export: BibTex EndNote

Article Metrics

Article views: 1724 Times PDF downloads: 2257 Times Cited by: 0 Times


Manuscript received: 18 August 2015 Manuscript revised: 15 November 2010 Online: Published: 01 April 2011

Email This Article

User name: