J. Semicond. > Volume 32 > Issue 4 > Article Number: 043002

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Zhang Huafu , Yang Shugang , Liu Hanfa and Yuan Changkun

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Abstract: Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm,sheet resistance of 6.8 \upOmega /口 and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

Key words: tungsten-doped zinc oxidetransparent conducting filmsmagnetron sputteringdeposition pressure

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Zhang H F, Yang S G, Liu H F, Yuan C K. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering[J]. J. Semicond., 2011, 32(4): 043002. doi: 10.1088/1674-4926/32/4/043002.

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Manuscript received: 18 August 2015 Manuscript revised: 15 November 2010 Online: Published: 01 April 2011

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