J. Semicond. > Volume 32 > Issue 4 > Article Number: 044002

Influence of substrate temperature on the performance of zinc oxide thin film transistor

Ma Junwei , Ran Feng , Xu Meihua and Ji Huijie

+ Author Affilications + Find other works by these authors

PDF

Abstract: Top-contact thin film transistors (TFTs) using radio frequency (RF) magnetron sputtering zinc oxide (ZnO) and silicon dioxide (SiO2/ films as the active channel layer and gate insulator layer, respectively, were fabricated. The performances of ZnO TFTs with different ZnO film deposition temperatures (room temperature, 100oC and 200oC) were investigated. Compared with the transistor with room-temperature deposited ZnO films, the mobility of the device fabricated at 200oC is improved by 94% and the threshold voltage shift is reduced from 18 to 3 V (after 1 h positive gate voltage stress). Experimental results indicate that substrate temperature plays an important role in enhancing the field effect mobility, sharping the subthreshold swing and improving the bias stability of the devices. Atomic force microscopy was used to investigate the ZnO film properties. The reasons for the device performance improvement are discussed.

Key words: ZnO-TFT

[1]

Yongwen Zhang, Wenbin Chen. A new LTPS TFT AC pixel circuit for an AMOLED. J. Semicond., 2013, 34(1): 015009. doi: 10.1088/1674-4926/34/1/015009

[2]

Ye Qiang, Lai Xinquan, Chen Fuji, Li Yanming, Yuan Bing. Design of an On-Chip Gate Pulse Modulate Controller for a TFT-LCD. J. Semicond., 2008, 29(8): 1620.

[3]

Rui Geng, Yuxin Gong. High performance active image sensor pixel design with circular structure oxide TFT. J. Semicond., 2019, 40(2): 022402. doi: 10.1088/1674-4926/40/2/022402

[4]

Chen Shan, Pan Tianhong, Jang Shi-Shang. Development of a virtual metrology for high-mix TFT-LCD manufacturing processes. J. Semicond., 2010, 31(11): 116006. doi: 10.1088/1674-4926/31/11/116006

[5]

Xiaofeng Song, Jianguo Luo, Lei Zhou, Lirong Zhang, Weijing Wu, Junbiao Peng. A new poly-Si TFT compensation pixel circuit employing AC driving mode for AMOLED displays. J. Semicond., 2013, 34(12): 125011. doi: 10.1088/1674-4926/34/12/125011

[6]

Wei Tingcun, Gao Wu. Top-Down Design of 260k Color TFT-LCD One-Chip Driver ICs. J. Semicond., 2008, 29(4): 706.

[7]

Gao Wu, Wei Tingcun, Gao Deyuan. Two-Stage Driving Circuit for One-Chip TFT-LCD Driver IC. J. Semicond., 2007, 28(3): 385.

[8]

Meng Zhiguo, Kwok Hoising, Wu Chunya, Wong Man, Xiong Shaozhen. Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED. J. Semicond., 2006, 27(8): 1514.

[9]

Wei Tingcun, Lin Yanjun, Gao Wu, Lü Lifeng. Design of a Built-In Power Supply IP Core for TFT-LCD Driver IC. J. Semicond., 2007, 28(5): 802.

[10]

Wei Tingcun, Ding Xingbo, Gao Deyuan. Output Buffer Circuits for Medium or Small Size TFT-LCD Driver IC. J. Semicond., 2006, 27(12): 2214.

[11]

Wei Sun. A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device. J. Semicond., 2013, 34(6): 064008. doi: 10.1088/1674-4926/34/6/064008

[12]

Zheng Ran, Wei Tingcun, Wang Jia, Gao Deyuan. An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC. J. Semicond., 2009, 30(9): 095015. doi: 10.1088/1674-4926/30/9/095015

[13]

Li Jun, Yan Jinliang, Sun Xueqing, Li Kewei, Yang Chunxiu. Influence of Ag Layer Thickness on the Properties of ZnO/Ag/ZnO Films. J. Semicond., 2007, 28(9): 1402.

[14]

Fuxue Wang, Xiaolong Cai, Dawei Yan, Zhaomin Zhu, Xiaofeng Gu. Luminescence properties of tetrapod ZnO nanostructures. J. Semicond., 2014, 35(6): 063004. doi: 10.1088/1674-4926/35/6/063004

[15]

Fuxue Wang, Xiaolong Cai, Dawei Yan, Zhaomin Zhu, Shaoqing Xiao, Xiaofeng Gu. Synthesis and luminescence characteristics of ZnO nanotubes. J. Semicond., 2014, 35(9): 093004. doi: 10.1088/1674-4926/35/9/093004

[16]

Li Ying, Feng Shiwei, Yang Ji, Zhang Yuezong, Xie Xuesong, Lü Changzhi, Lu Yicheng. Photoresponse of ZnO Single Crystal Film. J. Semicond., 2006, 27(1): 96.

[17]

K. Mahmood, N. Amin, A. Ali, M. Ajaz un Nabi, M. Imran Arshad, M. Zafar, M. Asghar. Enhancement of phosphors-solubility in ZnO by thermal annealing. J. Semicond., 2015, 36(12): 123001. doi: 10.1088/1674-4926/36/12/123001

[18]

Liu Cihui, Yao Ran, Su Jianfeng, Ma Zeyu, Fu Zhuxi. Luminescence and Recombination Centers in ZnO/Si Films. J. Semicond., 2007, 28(2): 196.

[19]

Yang Qing, Lou Jingyi, Yang Deren, Tong Limin. An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires. J. Semicond., 2006, 27(3): 425.

[20]

Wan Qixin, Xiong Zhihua, Rao Jianping, Dai Jiangnan, Le Shuping, Wang Guping, Jiang Fengyi. First-Principles Calculation of ZnO Doped with Ag. J. Semicond., 2007, 28(5): 696.

Search

Advanced Search >>

GET CITATION

Ma J W, Ran F, Xu M H, Ji H J. Influence of substrate temperature on the performance of zinc oxide thin film transistor[J]. J. Semicond., 2011, 32(4): 044002. doi: 10.1088/1674-4926/32/4/044002.

Export: BibTex EndNote

Article Metrics

Article views: 1912 Times PDF downloads: 2512 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: 09 November 2010 Online: Published: 01 April 2011

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误