J. Semicond. > Volume 32 > Issue 5 > Article Number: 056002

Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

Ou Weiying , Zhao Lei , Diao Hongwei , Zhang Jun and Wang Wenjing

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Abstract: Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

Key words: textureporous siliconanti-reflectance coatingsolar cell

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Ou W Y, Zhao L, Diao H W, Zhang J, Wang W J. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching[J]. J. Semicond., 2011, 32(5): 056002. doi: 10.1088/1674-4926/32/5/056002.

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History

Manuscript received: 18 August 2015 Manuscript revised: 20 December 2010 Online: Published: 01 May 2011

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