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A physical surface-potential-based drain current model for polysilicon thin-film transistors.
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Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects.
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A surface-potential-based model for AlGaN/AlN/GaN HEMT.
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2013, 34(9): 094002.
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Compact analytical model for single gate AlInSb/InSb high electron mobility transistors.
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2014, 35(11): 114003.
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Ali Ahaitouf, Abdelaziz Ahaitouf, Jean Paul Salvestrini, Hussein Srour.
Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP.
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2011, 32(10): 104002.
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Kong Ming, Guo Jianmin, Zhang Ke, Li Wenhong.
A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs.
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Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress.
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Xiaoyu Chen, Hao Wang, Gongchen Sun, Xiaoyu Ma, Jianguang Gao, Wengang Wu.
Resistive switching characteristic of electrolyte-oxide-semiconductor structures.
J. Semicond.,
2017, 38(8): 084003.
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Chaowen Liu, Jingping Xu, Lu Liu, Hanhan Lu, Yuan Huang.
A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric.
J. Semicond.,
2016, 37(2): 024004.
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