J. Semicond. > Volume 32 > Issue 7 > Article Number: 075011

A novel high reliability CMOS SRAM cell

Xie Chengmin , Wang Zhongfang , Wu Longsheng and Liu Youbao

+ Author Affiliations + Find other works by these authors

PDF

Abstract: A novel 8T single-event-upset (SEU) hardened and high static noise margin (SNM) SRAM cell is proposed. By adding one transistor paralleled with each access transistor, the drive capability of pull-up PMOS is greater than that of the conventional cell and the read access transistors are weaker than that of the conventional cell. So the hold, read SNM and critical charge increase greatly. The simulation results show that the critical charge is almost three times larger than that of the conventional 6T cell by appropriately sizing the pull-up transistors. The hold and read SNM of the new cell increase by 72% and 141.7%, respectively, compared to the 6T design, but it has a 54% area overhead and read performance penalty. According to these features, this novel cell suits high reliability applications, such as aerospace and military.

Key words: single-event-upset

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[1]

Tianqi Liu, Chao Geng, Zhangang Zhang, Fazhan Zhao, Song Gu, Teng Tong, Kai Xi, Gang Liu, Zhengsheng Han, Mingdong Hou, Jie Liu. Impact of temperature on single event upset measurement by heavy ions in SRAM devices. J. Semicond., 2014, 35(8): 084008. doi: 10.1088/1674-4926/35/8/084008

[2]

Wang Yuanming, Guo Hongxia, Zhang Fengqi, Zhang Keying, Chen Wei, Luo Yinhong, Guo Xiaoqiang. SRAM single event upset calculation and test using protons in the secondary beam in the BEPC. J. Semicond., 2011, 32(9): 092001. doi: 10.1088/1674-4926/32/9/092001

[3]

Liang Bin, Chen Shuming, Liu Biwei. Temperature Dependence of Digital Single Event Transient. J. Semicond., 2008, 29(7): 1407.

[4]

Feng Guoqiang, Ma Yingqi, Han Jianwei, Zhang Zhenlong, Huang Jianguo. Single Event Transients of Operational Amplifier and Optocoupler. J. Semicond., 2008, 29(9): 1729.

[5]

Zhiwei Han, Liang Wang, Suge Yue, Bing Han, Shougang Du. Analysis and RHBD technique of single event transients in PLLs. J. Semicond., 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001

[6]

Liang Bin, Chen Shuming, Liu Biwei, Liu Zheng. Propagation Induced Pulse Broadening of Single Event Transient. J. Semicond., 2008, 29(9): 1827.

[7]

Yuanfu Zhao, Suge Yue, Xinyuan Zhao, Shijin Lu, Qiang Bian, Liang Wang, Yongshu Sun. Single event soft error in advanced integrated circuit. J. Semicond., 2015, 36(11): 111001. doi: 10.1088/1674-4926/36/11/111001

[8]

Hongchao Zheng, Yuanfu Zhao, Suge Yue, Long Fan, Shougang Du, Maoxin Chen, Chunqing Yu. The single-event effect evaluation technology for nano integrated circuits. J. Semicond., 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002

[9]

Wen Zhao, Xiaoqiang Guo, Wei Chen, Hongxia Guo, Dongsheng Lin, Hanning Wang, Yinhong Luo, Lili Ding, Yuanming Wang. Experimental study on the single event effects in pulse width modulators by laser testing. J. Semicond., 2015, 36(11): 115008. doi: 10.1088/1674-4926/36/11/115008

[10]

Yang Shiyu, Cao Zhou, Li Danming, Xue Yuxiong, Tian Kai. Experimental study on the single event latchup simulated by a pulse laser. J. Semicond., 2009, 30(6): 064009. doi: 10.1088/1674-4926/30/6/064009

[11]

Zhao Zhenyu, Li Junfeng, Zhang Minxuan, Li Shaoqing. Modeling and analysis of single-event transients in charge pumps. J. Semicond., 2009, 30(5): 055006. doi: 10.1088/1674-4926/30/5/055006

[12]

Duan Xueyan, Wang Liyun, Lai Jinmei. Effect of charge sharing on the single event transient response of CMOS logic gates. J. Semicond., 2011, 32(9): 095008. doi: 10.1088/1674-4926/32/9/095008

[13]

Yuanfu Zhao, Chunqing Yu, Long Fan, Suge Yue, Maoxin Chen, Shougang Du, Hongchao Zheng. A prediction technique for single-event effects on complex integrated circuits. J. Semicond., 2015, 36(11): 115003. doi: 10.1088/1674-4926/36/11/115003

[14]

Suge Yue, Xiaolin Zhang, Yuanfu Zhao, Lin Liu. Modeling and simulation of single-event effect in CMOS circuit. J. Semicond., 2015, 36(11): 111002. doi: 10.1088/1674-4926/36/11/111002

[15]

Suge Yue, Xiaolin Zhang, Xinyuan Zhao. Single event transient pulse width measurement of 65-nm bulk CMOS circuits. J. Semicond., 2015, 36(11): 115006. doi: 10.1088/1674-4926/36/11/115006

[16]

Haisong Li, Longsheng Wu, Bo Yang, Yihu Jiang. Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell. J. Semicond., 2017, 38(8): 085009. doi: 10.1088/1674-4926/38/8/085009

[17]

Yinhong Luo, Fengqi Zhang, Hongxia Guo, Yao Xiao, Wen Zhao, Lili Ding, Yuanming Wang. Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM. J. Semicond., 2015, 36(11): 114009. doi: 10.1088/1674-4926/36/11/114009

[18]

Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua, Li Junfeng. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs. J. Semicond., 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009

[19]

Weikang Wu, Xia An, Xiaobo Jiang, Yehua Chen, Jingjing Liu, Xing Zhang, Ru Huang. Line-edge roughness induced single event transient variation in SOI FinFETs. J. Semicond., 2015, 36(11): 114001. doi: 10.1088/1674-4926/36/11/114001

[20]

Jiang Lu, Hainan Liu, Xiaowu Cai, Jiajun Luo, Bo Li, Binhong Li, Lixin Wang, Zhengsheng Han. Single-event burnout hardening of planar power MOSFET with partially widened trench source. J. Semicond., 2018, 39(3): 034003. doi: 10.1088/1674-4926/39/3/034003

Search

Advanced Search >>

GET CITATION

Xie C M, Wang Z F, Wu L S, Liu Y B. A novel high reliability CMOS SRAM cell[J]. J. Semicond., 2011, 32(7): 075011. doi: 10.1088/1674-4926/32/7/075011.

Export: BibTex EndNote

Article Metrics

Article views: 2255 Times PDF downloads: 2371 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: 18 March 2011 Online: Published: 01 July 2011

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误