J. Semicond. > Volume 32 > Issue 8 > Article Number: 083002

Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

Tao Tao , Zhang Zhao , Liu Lian , Su Hui , Xie Zili , Zhang Rong , Liu Bin , Xiu Xiangqian , Li Yi , Han Ping , Shi Yi and Zheng Youdou

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Abstract: InGaN films were deposited on (0001) sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition. The In-composition of InGaN film was approximately controlled by changing the growth temperature. The connection between the growth temperature, In content, surface morphology and defect formation was obtained by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). Meanwhile, by comparing the SEM and AFM surface morphology images, we proposed several models of three different defects and discussed the mechanism of formation. The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

Key words: InGaN film

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Tao T, Zhang Z, Liu L, Su H, Xie Z L, Zhang R, Liu B, Xiu X Q, Li Y, Han P, Shi Y, Zheng Y D. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD[J]. J. Semicond., 2011, 32(8): 083002. doi: 10.1088/1674-4926/32/8/083002.

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History

Manuscript received: 18 August 2015 Manuscript revised: 06 April 2011 Online: Published: 01 August 2011

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