A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

Ge Qin; Chen Xiaojuan; Luo Weijun; Yuan Tingting; Pang Lei; Liu Xinyu

doi:10.1088/1674-4926/32/8/085001

Abstract: A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12–14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at V_ds = 25 V and V_gs = –4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.

Key words: Ku-band, AlGaN/GaN HEMTs, power amplifier, monolithic, power density

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[1]	Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan, Liu Xinyu. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE. J. Semicond., 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003
[2]	Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu, Liu Jian. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network. J. Semicond., 2008, 29(8): 1445.
[3]	Qin Ge, Xinyu Liu, Yingkui Zheng, Chuan Ye. A flat gain GaN MMIC power amplifier for X band application. J. Semicond., 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004
[4]	Yao Xiaojiang, Li Bin, Chen Yanhu, Chen Xiaojuan, Wei Ke, Li Chengzhan, Luo Weijun, Wang Xiaoliang, Liu Dan, Liu Guoguo, Liu Xinyu. AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band. J. Semicond., 2007, 28(4): 514.
[5]	Feng Zhihong, Yin Jiayun, Yuan Fengpo, Liu Bo, Liang Dong, Mo Jianghui, Zhang Zhiguo, Wang Yong, Feng Zhen, Li Xiaobai, Yang Kewu, Cai Shujun. A 5.1W/mm Power Density GaN HEMT on Si Substrate. J. Semicond., 2007, 28(12): 1949.
[6]	Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, Guangjun Xie. A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission. J. Semicond., 2016, 37(9): 095003. doi: 10.1088/1674-4926/37/9/095003
[7]	Ma Jiehui, Fang Gaozhan, Lan Yongsheng and, Ma Xiaoyu. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array. J. Semicond., 2005, 26(3): 476.
[8]	Zhang Shujing, Yang Ruixia, Zhang Yuqing, Gao Xuebang, Yang Kewu. Broadband MMIC Power Amplifier for C-X-Ku-Band Applications. J. Semicond., 2007, 28(6): 829.
[9]	Peng Xu, Xubo Song, Yuanjie Lü, Yuangang Wang, Shaobo Dun, Jiayun Yin, Yulong Fang, Guodong Gu, Zhihong Feng, Shujun Cai. W-band GaN MMIC PA with 257 mW output power at 86.5 GHz. J. Semicond., 2015, 36(8): 085009. doi: 10.1088/1674-4926/36/8/085009
[10]	Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu. An X-Band PHEMT MMIC Power Amplifier. J. Semicond., 2006, 27(10): 1800.
[11]	Yu Mengxia, Li Aibin, Xu Jun. A Ka-Band PHEMT MMIC 1W Power Amplifier. J. Semicond., 2007, 28(10): 1513.
[12]	Zhu Min, Yin Junjian, Zhang Haiying. A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness. J. Semicond., 2008, 29(8): 1441.
[13]	Chunjiang Ren, Shichang Zhong, Yuchao Li, Zhonghui Li, Yuechan Kong, Tangsheng Chen. Design, fabrication and characterising of 100 W GaN HEMT for Ku-bandapplication. J. Semicond., 2016, 37(8): 084002. doi: 10.1088/1674-4926/37/8/084002
[14]	Junming Lin, Guohao Zhang, Yaohua Zheng, Sizhen Li, Zhihao Zhang, Sidi Chen. Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application. J. Semicond., 2015, 36(12): 125002. doi: 10.1088/1674-4926/36/12/125002
[15]	Hongfei Yao, Yuxiong Cao, Danyu Wu, Xiaoxi Ning, Yongbo Su, Zhi Jin. A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain. J. Semicond., 2013, 34(7): 075005. doi: 10.1088/1674-4926/34/7/075005
[16]	Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer. J. Semicond., 2008, 29(11): 2204.
[17]	Xinyu Ma, Baoxing Duan, Yintang Yang. A 500-600 MHz GaN power amplifier with RC-LC stability network. J. Semicond., 2017, 38(8): 085003. doi: 10.1088/1674-4926/38/8/085003
[18]	Zhiqun Cheng, Minshi Jia, Ya Luan, Xinxiang Lian. Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure. J. Semicond., 2014, 35(12): 125005. doi: 10.1088/1674-4926/35/12/125005
[19]	Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li. The design and fabrication of a GaN-based monolithic light-emitting diode array. J. Semicond., 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010
[20]	Li Chengzhan, Liu Dan, Zheng Yingkui, Liu Xinyu, Liu Jian, Wei Ke, He Zhijing. Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si3N4 Passivation. J. Semicond., 2008, 29(2): 329.

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Ge Q, Chen X J, Luo W J, Yuan T T, Pang L, Liu X Y. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. J. Semicond., 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001.

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