J. Semicond. > Volume 32 > Issue 8 > Article Number: 085001

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

Ge Qin , Chen Xiaojuan , Luo Weijun , Yuan Tingting , Pang Lei and Liu Xinyu

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Abstract: A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12–14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at Vds = 25 V and Vgs = –4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.

Key words: Ku-bandAlGaN/GaN HEMTspower amplifiermonolithicpower density

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Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan, Liu Xinyu. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE. J. Semicond., 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003

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Ge Q, Chen X J, Luo W J, Yuan T T, Pang L, Liu X Y. A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J]. J. Semicond., 2011, 32(8): 085001. doi: 10.1088/1674-4926/32/8/085001.

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History

Manuscript received: 18 August 2015 Manuscript revised: 08 April 2011 Online: Published: 01 August 2011

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