J. Semicond. > Volume 32 > Issue 9 > Article Number: 094011

An SPICE model for phase-change memory simulations

Li Xi , Song Zhitang , Cai Daolin , Chen Xiaogang and Chen Houpeng

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Abstract: Along with a series of research works on the physical prototype and properties of the memory cell, an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented. By handling it with the heat distribution algorithm, threshold switching theory and the crystallization kinetic model, the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell. In particular, it can emulate the cell's temperature curve and crystallinity profile during the programming process, which can enable us to clearly understand the PCM's working principle and program process.

Key words: phase-change memorySPICEVerilog-A

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Li X, Song Z T, Cai D L, Chen X G, Chen H P. An SPICE model for phase-change memory simulations[J]. J. Semicond., 2011, 32(9): 094011. doi: 10.1088/1674-4926/32/9/094011.

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History

Manuscript received: 20 August 2015 Manuscript revised: 19 April 2011 Online: Published: 01 September 2011

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