J. Semicond. > Volume 33 > Issue 12 > Article Number: 124003

Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

Jin Xiaoshi , Liu Xi , Wu Meile , Chuai Rongyan , Jung-Hee Lee and Jong-Ho Lee

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Abstract: A model of subthreshold characteristics for both undoped and doped double-gate (DG) MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson's equation using variable separation technique. Without any fitting parameters, our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thickness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations' results and found very good agreement.

Key words: double-gateMOSFETsdeep nanoscalemodeling


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Jin X S, Liu X, Wu M L, Chuai R Y, J H Lee, J H Lee. Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs[J]. J. Semicond., 2012, 33(12): 124003. doi: 10.1088/1674-4926/33/12/124003.

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Manuscript received: 03 December 2014 Manuscript revised: 21 June 2012 Online: Published: 01 December 2012

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