J. Semicond. > Volume 33 > Issue 2 > Article Number: 024001

Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

Rajiv Sharma , Sujata Pandey and Shail Bala Jain

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Abstract: A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs. Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out. Finally this work is concluded by modeling the cut-off frequency, which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs. The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model.

Key words: double-gatefully depletedsilicon-on-insulatorPoisson's equationradio frequencyATLAS

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R Sharma, S Pandey, S B Jain. Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs[J]. J. Semicond., 2012, 33(2): 024001. doi: 10.1088/1674-4926/33/2/024001.

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History

Manuscript received: 03 December 2014 Manuscript revised: 25 September 2011 Online: Published: 01 February 2012

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