J. Semicond. > Volume 33 > Issue 5 > Article Number: 054012

Nano-WO3 film modified macro-porous silicon (MPS) gas sensor

Sun Peng , Hu Ming , Li Mingda and Ma Shuangyun

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Abstract: We prepared macro-porous silicon (MPS) by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon. Then, nano-WO3 films were deposited on MPS layers by DC facing target reactive magnetron sputtering. The morphologies of the MPS and WO3/MPS samples were investigated by using a field emission scanning electron microscope. The crystallization of WO3 and the valence of the W in the WO3/MPS sample were characterized by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The gas sensing properties of MPS and WO3/MPS gas sensors were thoroughly measured at room temperature. It can be concluded that: the WO3/MPS gas sensor shows the gas sensing properties of a P-type semiconductor gas sensor. The WO3/MPS gas sensor exhibits good recovery characteristics and repeatability to 1 ppm NO2. The addition of WO3 can enhance the sensitivity of MPS to NO2. The long-term stability of a WO3/MPS gas sensor is better than that of an MPS gas sensor. The sensitivity of the WO3/MPS gas sensor to NO2 is higher than that to NH3 and C2H5OH. The selectivity of the MPS to NO2 is modified by deposited nano-WO3 film.

Key words: MPS



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Sun P, Hu M, Li M D, Ma S Y. Nano-WO3 film modified macro-porous silicon (MPS) gas sensor[J]. J. Semicond., 2012, 33(5): 054012. doi: 10.1088/1674-4926/33/5/054012.

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Manuscript received: 20 August 2015 Manuscript revised: 23 December 2011 Online: Published: 01 May 2012

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