J. Semicond. > Volume 33 > Issue 8 > Article Number: 084004

A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

Cui Ning , Liang Renrong , Wang Jing , Zhou Wei and Xu Jun

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Abstract: A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced. The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations. The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel, while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability. The TFET device with the proposed structure has good switching characteristics, enhanced on-state current, and high process tolerance. It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.

Key words: TFET

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Cui N, Liang R R, Wang J, Zhou W, Xu J. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. J. Semicond., 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004.

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History

Manuscript received: 20 August 2015 Manuscript revised: 12 March 2012 Online: Published: 01 August 2012

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