J. Semicond. > Volume 34 > Issue 10 > Article Number: 104002

Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

Xiaojia Wan 1, 2, , Xiaoliang Wang 1, 2, 3, , , Hongling Xiao 1, 2, , Chun Feng 1, 2, , Lijuan Jiang 1, 2, , Shenqi Qu 1, 2, , Zhanguo Wang 1, 2, and Xun Hou 3,

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Abstract: Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress.

Key words: AlGaN/GaN HEMTInGaNcurrent collapsesurface states

Abstract: Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress.

Key words: AlGaN/GaN HEMTInGaNcurrent collapsesurface states



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[1]

Khan M A, Chen Q, Shur M S. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors[J]. IEEE Electron Device Lett, 1996, 17(7): 325. doi: 10.1109/55.506356

[2]

Tang J, Wang X L, Xiao H L. AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD[J]. Phys Solidi Status C, 2008, 5(9): 2982. doi: 10.1002/pssc.v5:9

[3]

Kikkawa T. Highly reliable 250 W GaN high electron mobility transistor power amplifier[J]. Jpn J Appl Phys, 2005, 44(7): 4896.

[4]

Meneghesso G, Verzellesi G, Danesin F. Reliability of GaN high electron-mobility transistors:state of the art and perspectives[J]. IEEE Trans Device Mater Rel, 2008, 8(2): 332. doi: 10.1109/TDMR.2008.923743

[5]

Tapajna M, Simms R J T, Pei Y. Integrated optical and electrical analysis:identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress[J]. IEEE Electron Device Lett, 2010, 31(7): 662. doi: 10.1109/LED.2010.2047092

[6]

Tapajna M, Kaun S W, Wong M H. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors[J]. Appl Phys Lett, 2011, 99(22): 223.

[7]

Mizutani T, Ohno Y, Akita M. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress[J]. IEEE Trans Electron Devices, 2003, 50(10): 2015. doi: 10.1109/TED.2003.816549

[8]

Higashiwaki M, Mimura T, Matsui T. GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications[J]. Thin Solid Films, 2007, 516(2008): 548.

[9]

Liu J, Zhou Y, Zhu J. AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement[J]. IEEE Electron Device Lett, 2006, 27(1): 10. doi: 10.1109/LED.2005.861027

[10]

Klein P B, Binari S C, Freitas J A. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors[J]. J Appl Phys, 2000, 88(5): 2843. doi: 10.1063/1.1287127

[11]

Gu W P, Hao Y, Zhang J C. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs[J]. Chin Phys Soc, 2009, 58(1): 511.

[12]

Bi Y, Wang X L, Xiao H L. The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure[J]. Eur Phys J Appl Phys, 2011, 55: 10102. doi: 10.1051/epjap/2011110184

[13]

Vetury R, Zhang N Q, Keller S. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs[J]. IEEE Trans Electron Devices, 2001, 48(3): 560. doi: 10.1109/16.906451

[14]

Mittereder J A, Binari S C, Klein P B. Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress[J]. Appl Phys Lett, 2003, 83(8): 1650. doi: 10.1063/1.1604472

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X J Wan, X L Wang, H L Xiao, C Feng, L J Jiang, S Q Qu, Z G Wang, X Hou. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2013, 34(10): 104002. doi: 10.1088/1674-4926/34/10/104002.

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Manuscript received: 04 March 2013 Manuscript revised: Online: Published: 01 October 2013

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