J. Semicond. > Volume 34 > Issue 6 > Article Number: 065001

A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

Jie Cui 1, 2, , , Lei Chen 1, , Chunlei Kang 1, , Jia Shi 1, , Xuguang Zhang 1, , Baoli Ai 1, and Yi Liu 1,

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Abstract: A three-stage 4.8-6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a 31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal.

Key words: error vector magnitude (EVM)high power amplifier (HPA)high linearityInGaP/GaAs HBTwideband

Abstract: A three-stage 4.8-6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a 31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal.

Key words: error vector magnitude (EVM)high power amplifier (HPA)high linearityInGaP/GaAs HBTwideband



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[1]

Kidwai A A, Nazimov A, Eilat Y. Fully integrated 23 dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45 nm CMOS process[J]. Proc RFIC, 2009: 273.

[2]

Kim J, Kim W, Kornegay K T. A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer[J]. IEEE J Solid-State Circuits, 2012, 47(3): 599. doi: 10.1109/JSSC.2011.2180977

[3]

Li Wenyuan, Zhang Qian. A novel broadband power amplifier in SiGe HBT technology[J]. Journal of Semiconductors, 2013, 34(1): 015001. doi: 10.1088/1674-4926/34/1/015001

[4]

Pingue M, Orobello B, Diciomma R. 1-6 GHz 4 W MMIC GaAs high power amplifier[J]. Microw Opt Technol Lett, 2012, 54(12): 2747. doi: 10.1002/mop.v54.12

[5]

Lin C C, Hsu Y C. Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT[J]. Proc Microwave Conference, 2005.

[6]

Crips S C. RF power amplifier for wireless communications. 2nd ed[J]. Artech House, 2006.

[7]

Galal S, Razavi B. 40-Gb/s amplifier and ESD protection circuit in 0.18-μm CMOS technology[J]. IEEE J Solid-State Circuits, 2012, 39(12): 2389.

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J Cui, L Chen, C L Kang, J Shi, X G Zhang, B L Ai, Y Liu. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. J. Semicond., 2013, 34(6): 065001. doi: 10.1088/1674-4926/34/6/065001.

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History

Manuscript received: 26 November 2012 Manuscript revised: 19 December 2012 Online: Published: 01 June 2013

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