J. Semicond. > Volume 34 > Issue 9 > Article Number: 094002

A surface-potential-based model for AlGaN/AlN/GaN HEMT

Jie Wang 1, 2, , Lingling Sun 2, , , Jun Liu 2, and Mingzhu Zhou 2,

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Abstract: A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

Key words: AlGaN/AlN/GaN HEMT2DEGsurface potentialpolarization effectsmobility

Abstract: A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

Key words: AlGaN/AlN/GaN HEMT2DEGsurface potentialpolarization effectsmobility



References:

[1]

Shen L, Heikman S, Moran B, et a1. AlGaN/AlN/GaN high power microwave HEMT[J]. IEEE Electron Device Lett, 2001, 22(10): 457. doi: 10.1109/55.954910

[2]

Smorchkova I P, Chen L, Mates T, et a1. AlN/GaN and (Al, Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular beam epitaxy[J]. J Appl Phys, 2001, 90(10): 5195.

[3]

Gao J. RF and microwave modeling and measurement techniques for field effect transistors. Raleigh, NC:SciTech Publishing, Inc, 2010

[4]

Dunleavy L, Baylis C, Curtice W. Modeling GaN:powerful but challenging[J]. IEEE Microw Mag, 2010, 11(6): 82. doi: 10.1109/MMM.2010.937735

[5]

Curtice W R. Nonlinear modeling of compound semiconductor HEMTs state of the art[J]. IEEE MTT-S International Microwave Symposium Digest, 2010: 1194.

[6]

Statz H, Newman P, Smith I W. GaAs FET device and circuit simulation in SPICE[J]. IEEE Trans Electron Devices, 1987, 34(2): 160. doi: 10.1109/T-ED.1987.22902

[7]

Angelov I, Zirath H, Rosman N. A new empirical nonlinear model for HEMT and MESFET devices[J]. Microwave Theory and Techniques, 1992, 40(12): 2258. doi: 10.1109/22.179888

[8]

Leckey J G. A scalable X-parameter model for GaAs and GaN FETs[J]. Microwave Integrated Circuits Conference (EuMIC), 2011: 13.

[9]

Sun G, Xu Y, Liang A. The study of nonlinear scattering functions and X-parameters[J]. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010: 1086.

[10]

Cheng X, Wang Y. A surface-potential-based compact model for AlGaN/GaN MODFETs[J]. IEEE Trans Electron Devices, 2011, 58(2): 448. doi: 10.1109/TED.2010.2089690

[11]

Liu J, Yu Z, Sun L. An accurate surface-potential-based large-signal model for HEMTs[J]. The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, USA, 2012.

[12]

Xu Wenjie, Sun Lingling, Liu Jun. A continuous and analytical surface potential model for SOI LDMOS[J]. Chinese Journal of Semiconductors, 2007, 28(11): 1712.

[13]

Aziz M A, El-Abd A. Theoretical study of' the charge control in AlGaN/GaN HEMTs[J]. Proceedings of the Twenty Third National Radio Science Conference, 2006: 1.

[14]

Yu T H, Brennan K F. Theoretical study of a GaN/AlGaN high electron mobility transistor including a non-linear polarization model[J]. IEEE Trans Electron Devices, 2003, 50(2): 315. doi: 10.1109/TED.2002.808519

[15]

Wang J, Sun L, Liu J. A surface-potential-based compact core model for GaN HEMTs[J]. Journal of Microwaves, 2012, 6(1): 1.

[16]

Parish G, Umana-Membreno G A, Jolley S M. AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport[J]. Conference on Optoelectronic and Microelectronic Materials and Devices, 2004: 29.

[17]

Gildenblat G, Li X, Wu W. PSP:an advanced surface-potential-based MOSFET model for circuit simulation[J]. IEEE Trans Electron Devices, 2006, 53(9): 1979. doi: 10.1109/TED.2005.881006

[18]

Schwierz F. An electron mobility model for wurtzite GaN[J]. Solid-State Electron, 2005, 49: 889. doi: 10.1016/j.sse.2005.03.006

[1]

Shen L, Heikman S, Moran B, et a1. AlGaN/AlN/GaN high power microwave HEMT[J]. IEEE Electron Device Lett, 2001, 22(10): 457. doi: 10.1109/55.954910

[2]

Smorchkova I P, Chen L, Mates T, et a1. AlN/GaN and (Al, Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular beam epitaxy[J]. J Appl Phys, 2001, 90(10): 5195.

[3]

Gao J. RF and microwave modeling and measurement techniques for field effect transistors. Raleigh, NC:SciTech Publishing, Inc, 2010

[4]

Dunleavy L, Baylis C, Curtice W. Modeling GaN:powerful but challenging[J]. IEEE Microw Mag, 2010, 11(6): 82. doi: 10.1109/MMM.2010.937735

[5]

Curtice W R. Nonlinear modeling of compound semiconductor HEMTs state of the art[J]. IEEE MTT-S International Microwave Symposium Digest, 2010: 1194.

[6]

Statz H, Newman P, Smith I W. GaAs FET device and circuit simulation in SPICE[J]. IEEE Trans Electron Devices, 1987, 34(2): 160. doi: 10.1109/T-ED.1987.22902

[7]

Angelov I, Zirath H, Rosman N. A new empirical nonlinear model for HEMT and MESFET devices[J]. Microwave Theory and Techniques, 1992, 40(12): 2258. doi: 10.1109/22.179888

[8]

Leckey J G. A scalable X-parameter model for GaAs and GaN FETs[J]. Microwave Integrated Circuits Conference (EuMIC), 2011: 13.

[9]

Sun G, Xu Y, Liang A. The study of nonlinear scattering functions and X-parameters[J]. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010: 1086.

[10]

Cheng X, Wang Y. A surface-potential-based compact model for AlGaN/GaN MODFETs[J]. IEEE Trans Electron Devices, 2011, 58(2): 448. doi: 10.1109/TED.2010.2089690

[11]

Liu J, Yu Z, Sun L. An accurate surface-potential-based large-signal model for HEMTs[J]. The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, USA, 2012.

[12]

Xu Wenjie, Sun Lingling, Liu Jun. A continuous and analytical surface potential model for SOI LDMOS[J]. Chinese Journal of Semiconductors, 2007, 28(11): 1712.

[13]

Aziz M A, El-Abd A. Theoretical study of' the charge control in AlGaN/GaN HEMTs[J]. Proceedings of the Twenty Third National Radio Science Conference, 2006: 1.

[14]

Yu T H, Brennan K F. Theoretical study of a GaN/AlGaN high electron mobility transistor including a non-linear polarization model[J]. IEEE Trans Electron Devices, 2003, 50(2): 315. doi: 10.1109/TED.2002.808519

[15]

Wang J, Sun L, Liu J. A surface-potential-based compact core model for GaN HEMTs[J]. Journal of Microwaves, 2012, 6(1): 1.

[16]

Parish G, Umana-Membreno G A, Jolley S M. AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport[J]. Conference on Optoelectronic and Microelectronic Materials and Devices, 2004: 29.

[17]

Gildenblat G, Li X, Wu W. PSP:an advanced surface-potential-based MOSFET model for circuit simulation[J]. IEEE Trans Electron Devices, 2006, 53(9): 1979. doi: 10.1109/TED.2005.881006

[18]

Schwierz F. An electron mobility model for wurtzite GaN[J]. Solid-State Electron, 2005, 49: 889. doi: 10.1016/j.sse.2005.03.006

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J Wang, L L Sun, J Liu, M Z Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT[J]. J. Semicond., 2013, 34(9): 094002. doi: 10.1088/1674-4926/34/9/094002.

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Manuscript received: 04 February 2013 Manuscript revised: 09 April 2013 Online: Published: 01 September 2013

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