J. Semicond. > Volume 35 > Issue 1 > Article Number: 015007

A 6-18 GHz broadband power amplifier MMIC with excellent efficiency

Yifeng Chen , , Jinhai Quan , Yungang Liu and Liulin Hu

+ Author Affiliations + Find other works by these authors

PDF

Abstract: A three-stage monolithic microwave integrated circuit (MMIC) power amplifier from 6-18 GHz, which achieves high output power with excellent efficiency, is designed, fabricated and tested. Measured results show that the saturated output power and the small signal gain are about 32 dBm and 23 dB, respectively. Thus, the power added efficiency of about 28% indicates that it is useful in various communication systems.

Key words: power amplifierMMIC6-18 GHz

Abstract: A three-stage monolithic microwave integrated circuit (MMIC) power amplifier from 6-18 GHz, which achieves high output power with excellent efficiency, is designed, fabricated and tested. Measured results show that the saturated output power and the small signal gain are about 32 dBm and 23 dB, respectively. Thus, the power added efficiency of about 28% indicates that it is useful in various communication systems.

Key words: power amplifierMMIC6-18 GHz



References:

[1]

Popovich R, Rahmanony O. Miniature 6-18 GHz switched-bit phase shifter[J]. Microwave Review, 2004: 49.

[2]

Liao C F, Liu S I. A broadband noise-canceling CMOS LNA for 3.1-10.6 GHz UWB receivers[J]. IEEE J Solid-State Circuits, 2007, 42(2): 329. doi: 10.1109/JSSC.2006.889356

[3]

Van der Bent G, de Hek A P, Bessemoulin A. Low-cost high-efficient 10-Watt X-band high-power amplifier[J]. Microwaves, Communications, Antennas and Electronics Systems, 2009: 1.

[4]

Chu C K, Huang H K, Liu H Z. A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier[J]. IEEE Microw Wirel Comp, 2007, 17(2): 151. doi: 10.1109/LMWC.2006.890346

[5]

Bannister D C, Zelley C A, Barnes A R. A 2-18 GHz wideband high dynamic range receiver MMIC[J]. IEEE RFIC Symp Dig, 2002: 147.

[6]

Tzeng B, Lien C H, Wang H. A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching network[J]. IEEE Trans Microw Theory & Tech, 2002, 50(11): 2564.

[7]

Chang H Y, Liu Y C, Weng S H. Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage[J]. IEEE Trans Microw Theory & Tech, 2011, 59(2): 443.

[8]

Kim J, Kim Y, Lee S. A broadband power-reconfigurable distributed amplifier[J]. Microwave Symposium Digest (MTT), 2012: 1.

[9]

Park Y, Kim Y, Choi W. X-to-K band broadband watt-level power amplifier using stacked-FET unit cells[J]. Radio Frequency Integrated Circuits Symposium (RFIC), 2011: 1.

[10]

http: //www. avagotech. com/docs/AV02-1370EN

[11]

http: //module-csums. cognix-systems. com/telechargement/9-1-1. pdf

[12]

Li D Z, Wang C, Huang W C. A high-power Ka-bang power amplifier design based on GaAs PHEMT technology for VSAT ODU applications[J]. 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009: 20.

[13]

Chaki S, Amasuga H, Goto S. A V-band high power and high gain amplifier MMIC using GaAs PHEMT technology[J]. IEEE Compound Semiconductor Integrated Circuits Symposium, 2008: 1.

[14]

http: //www. avagotech. com/docs/5988-2710EN

[1]

Popovich R, Rahmanony O. Miniature 6-18 GHz switched-bit phase shifter[J]. Microwave Review, 2004: 49.

[2]

Liao C F, Liu S I. A broadband noise-canceling CMOS LNA for 3.1-10.6 GHz UWB receivers[J]. IEEE J Solid-State Circuits, 2007, 42(2): 329. doi: 10.1109/JSSC.2006.889356

[3]

Van der Bent G, de Hek A P, Bessemoulin A. Low-cost high-efficient 10-Watt X-band high-power amplifier[J]. Microwaves, Communications, Antennas and Electronics Systems, 2009: 1.

[4]

Chu C K, Huang H K, Liu H Z. A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier[J]. IEEE Microw Wirel Comp, 2007, 17(2): 151. doi: 10.1109/LMWC.2006.890346

[5]

Bannister D C, Zelley C A, Barnes A R. A 2-18 GHz wideband high dynamic range receiver MMIC[J]. IEEE RFIC Symp Dig, 2002: 147.

[6]

Tzeng B, Lien C H, Wang H. A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching network[J]. IEEE Trans Microw Theory & Tech, 2002, 50(11): 2564.

[7]

Chang H Y, Liu Y C, Weng S H. Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage[J]. IEEE Trans Microw Theory & Tech, 2011, 59(2): 443.

[8]

Kim J, Kim Y, Lee S. A broadband power-reconfigurable distributed amplifier[J]. Microwave Symposium Digest (MTT), 2012: 1.

[9]

Park Y, Kim Y, Choi W. X-to-K band broadband watt-level power amplifier using stacked-FET unit cells[J]. Radio Frequency Integrated Circuits Symposium (RFIC), 2011: 1.

[10]

http: //www. avagotech. com/docs/AV02-1370EN

[11]

http: //module-csums. cognix-systems. com/telechargement/9-1-1. pdf

[12]

Li D Z, Wang C, Huang W C. A high-power Ka-bang power amplifier design based on GaAs PHEMT technology for VSAT ODU applications[J]. 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2009: 20.

[13]

Chaki S, Amasuga H, Goto S. A V-band high power and high gain amplifier MMIC using GaAs PHEMT technology[J]. IEEE Compound Semiconductor Integrated Circuits Symposium, 2008: 1.

[14]

http: //www. avagotech. com/docs/5988-2710EN

[1]

Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu. An X-Band PHEMT MMIC Power Amplifier. J. Semicond., 2006, 27(10): 1800.

[2]

Yu Mengxia, Li Aibin, Xu Jun. A Ka-Band PHEMT MMIC 1W Power Amplifier. J. Semicond., 2007, 28(10): 1513.

[3]

Peng Xu, Xubo Song, Yuanjie Lü, Yuangang Wang, Shaobo Dun, Jiayun Yin, Yulong Fang, Guodong Gu, Zhihong Feng, Shujun Cai. W-band GaN MMIC PA with 257 mW output power at 86.5 GHz. J. Semicond., 2015, 36(8): 085009. doi: 10.1088/1674-4926/36/8/085009

[4]

Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun, Sun Xiaowei. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT. J. Semicond., 2006, 27(12): 2160.

[5]

Qin Ge, Wei Liu, Bo Xu, Feng Qian, Changfei Yao. A 77-100 GHz power amplifier using 0.1-μm GaAs PHEMT technology. J. Semicond., 2017, 38(3): 035001. doi: 10.1088/1674-4926/38/3/035001

[6]

Wang Shaodong, Gao Xuebang, Wu Hongjiang, Wang Xiangwei, Mo Lidong. A 12~18GHz Wide Band VCO Based on Quasi-MMIC. J. Semicond., 2008, 29(1): 63.

[7]

Qin Ge, Xinyu Liu, Yingkui Zheng, Chuan Ye. A flat gain GaN MMIC power amplifier for X band application. J. Semicond., 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004

[8]

Zhang Shujing, Yang Ruixia, Zhang Yuqing, Gao Xuebang, Yang Kewu. Broadband MMIC Power Amplifier for C-X-Ku-Band Applications. J. Semicond., 2007, 28(6): 829.

[9]

Zhu Min, Yin Junjian, Zhang Haiying. A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness. J. Semicond., 2008, 29(8): 1441.

[10]

Xu Jian, Wang Zhigong, Zhang Ying, Huang Jing. A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process. J. Semicond., 2011, 32(7): 075002. doi: 10.1088/1674-4926/32/7/075002

[11]

Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, Liu Xinyu, Wu Dexin. X Band MMIC Power Amplifier Based on InGaP/GaAs HBT. J. Semicond., 2007, 28(5): 759.

[12]

Wang Chuang, Qian Rong, Sun Xiaowei. K-Band Monolithic Low Noise Amplifier with High Gain. J. Semicond., 2006, 27(7): 1285.

[13]

Qin Ge, Hongqi Tao, Xuming Yu. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC. J. Semicond., 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003

[14]

Chunjiang Ren, Hongchang Shen, Zhonghui Li, Tangsheng Chen, Bin Zhang, Tao Gao. GaN HEMT with AlGaN back barrier for high power MMIC switch application. J. Semicond., 2015, 36(1): 014008. doi: 10.1088/1674-4926/36/1/014008

[15]

Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain. J. Semicond., 2008, 29(7): 1373.

[16]

Wang Lifa, Yang Ruixia, Wu Jingfeng, Li Yanlei. An 8-18 GHz broadband high power amplifier. J. Semicond., 2011, 32(11): 115006. doi: 10.1088/1674-4926/32/11/115006

[17]

Wu Rui, Liao Xiaoping, Zhang Zhiqiang. MMIC-Based RF On-Chip LC Passive Filters. J. Semicond., 2008, 29(12): 2437.

[18]

Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers. J. Semicond., 2008, 29(6): 1044.

[19]

Song Jiayou, Wang Zhigong, Peng Yanjun. A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe. J. Semicond., 2008, 29(11): 2101.

[20]

Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu, Liu Jian. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network. J. Semicond., 2008, 29(8): 1445.

Search

Advanced Search >>

GET CITATION

Y F Chen, J H Quan, Y G Liu, L L Hu. A 6-18 GHz broadband power amplifier MMIC with excellent efficiency[J]. J. Semicond., 2014, 35(1): 015007. doi: 10.1088/1674-4926/35/1/015007.

Export: BibTex EndNote

Article Metrics

Article views: 1483 Times PDF downloads: 22 Times Cited by: 0 Times

History

Manuscript received: 08 April 2013 Manuscript revised: 13 August 2013 Online: Published: 01 January 2014

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误