J. Semicond. > Volume 35 > Issue 11 > Article Number: 112001

Microwave annealing effects on ZnO films deposited by atomic layer deposition

Shirui Zhao , Yabin Dong , Mingyan Yu , Xiaolong Guo , Xinwei Xu , Yupeng Jing , and Yang Xia

+ Author Affilications + Find other works by these authors

PDF

Abstract: Zinc oxide thin films deposited on glass substrate at 150℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500℃. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

Key words: ZnOmicrowaveannealing

Abstract: Zinc oxide thin films deposited on glass substrate at 150℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500℃. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

Key words: ZnOmicrowaveannealing



References:

[1]

Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors[J]. Appl Phys Lett, 2003, 82(5): 733. doi: 10.1063/1.1542677

[2]

Fortunato E M C, Barquinha P M C, Pimentel A C M B G. Fully transparent ZnO thin-film transistor produced at room temperature[J]. Adv Mater, 2005, 17(5): 590. doi: 10.1002/adma.200400368

[3]

Carcia P, McLean R, Reilly M. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition[J]. Appl Phys Lett, 2006, 88(12): 123509. doi: 10.1063/1.2188379

[4]

Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors[J]. IEEE Electron Device Lett, 2008, 29(9): 1024. doi: 10.1109/LED.2008.2001635

[5]

Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors:a review of recent advances[J]. Adv Mater, 2012, 24(22): 2945. doi: 10.1002/adma.v24.22

[6]

Chiang H Q, Wager J F, Hoffman R L. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer[J]. Appl Phys Lett, 2005, 86(1): 013503. doi: 10.1063/1.1843286

[7]

Law M, Greene L E, Johnson J C. Nanowire dye-sensitized solar cells[J]. Nature Mater, 2005, 4(6): 455. doi: 10.1038/nmat1387

[8]

Lee Y C, Hu S Y, Water W. Improved optical and structural properties of ZnO thin films by rapid thermal annealing[J]. Solid State Commun, 2007, 143(4/5): 250.

[9]

Hong R, Huang J, He H. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films[J]. Appl Surf Sci, 2005, 242(3): 346.

[10]

Abdelouahab G, Benramache S, Benhaoua B. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique[J]. Journal of Semiconductors, 2013, 34(7): 073002. doi: 10.1088/1674-4926/34/7/073002

[11]

Pung S Y, Choy K L, Shan C. Preferential growth of ZnO thin films by the atomic layer deposition technique[J]. Nanotechnology, 2008, 19(43): 435609. doi: 10.1088/0957-4484/19/43/435609

[12]

Kang H S, Kang J S, Kim J W. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films[J]. J Appl Phys, 2004, 95(3): 1246. doi: 10.1063/1.1633343

[13]

Wang M, Wang J, Chen W. Effect of preheating and annealing temperatures on quality characteristics of ZnO thin film prepared by sol-gel method[J]. Mater Chem Phys, 2006, 97(2): 219.

[14]

Lee Y C, Hu S Y, Water W. Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates[J]. J Luminescence, 2009, 129(2): 148. doi: 10.1016/j.jlumin.2008.09.003

[15]

Cheng Y C. Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition[J]. Appl Surf Sci, 2011, 258(1): 604. doi: 10.1016/j.apsusc.2011.07.124

[16]

Wen Zhanhua, Wang Li, Fang Wenqing. Influence of annealing temperature on strucatural and optical properites of ZnO thin films[J]. Chinese Journal of Semiconductors, 2005, 26(3): 498.

[17]

Xu P, Fu C, Hu C. Ultra-shallow junctions formed using microwave annealing[J]. Appl Phys Lett, 2013, 102(12): 112114.

[18]

Yeh M S, Lee Y J, Hung M F. High-performance gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation[J]. IEEE Trans Nanotechnol, 2013, 12(4): 636. doi: 10.1109/TNANO.2013.2265778

[19]

Cho T C, Lu Y L, Yao J Y. Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si[J]. ECS Journal of Solid State Science and Technology, 2013, 2(7): 293. doi: 10.1149/2.010307jss

[20]

Cui M L, Wu X M, Zhuge L J. Effects of annealing temperature on the structure and photoluminescence properties of ZnO films[J]. Vacuum, 2007, 81(7): 899. doi: 10.1016/j.vacuum.2006.10.011

[21]

Kukreja L M, Misra P, Fallert P. Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures[J]. J Appl Phys, 2012, 112(1): 013525. doi: 10.1063/1.4730774

[22]

Fang Z B, Yan Z J, Tan Y S. Influence of post-annealing treatment on the structure properties of ZnO films[J]. Appl Surf Sci, 2005, 241(3/4): 303.

[23]

Kang H S, Kang J S, Pang S S. Variation of light emitting properties of ZnO thin films depending on post-annealing temperature[J]. Mater Sci Eng B, 2003, 102(1-3): 313. doi: 10.1016/S0921-5107(02)00730-4

[24]

Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates[J]. Appl Phys Lett, 2001, 79(7): 943. doi: 10.1063/1.1394173

[1]

Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors[J]. Appl Phys Lett, 2003, 82(5): 733. doi: 10.1063/1.1542677

[2]

Fortunato E M C, Barquinha P M C, Pimentel A C M B G. Fully transparent ZnO thin-film transistor produced at room temperature[J]. Adv Mater, 2005, 17(5): 590. doi: 10.1002/adma.200400368

[3]

Carcia P, McLean R, Reilly M. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition[J]. Appl Phys Lett, 2006, 88(12): 123509. doi: 10.1063/1.2188379

[4]

Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors[J]. IEEE Electron Device Lett, 2008, 29(9): 1024. doi: 10.1109/LED.2008.2001635

[5]

Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors:a review of recent advances[J]. Adv Mater, 2012, 24(22): 2945. doi: 10.1002/adma.v24.22

[6]

Chiang H Q, Wager J F, Hoffman R L. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer[J]. Appl Phys Lett, 2005, 86(1): 013503. doi: 10.1063/1.1843286

[7]

Law M, Greene L E, Johnson J C. Nanowire dye-sensitized solar cells[J]. Nature Mater, 2005, 4(6): 455. doi: 10.1038/nmat1387

[8]

Lee Y C, Hu S Y, Water W. Improved optical and structural properties of ZnO thin films by rapid thermal annealing[J]. Solid State Commun, 2007, 143(4/5): 250.

[9]

Hong R, Huang J, He H. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films[J]. Appl Surf Sci, 2005, 242(3): 346.

[10]

Abdelouahab G, Benramache S, Benhaoua B. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique[J]. Journal of Semiconductors, 2013, 34(7): 073002. doi: 10.1088/1674-4926/34/7/073002

[11]

Pung S Y, Choy K L, Shan C. Preferential growth of ZnO thin films by the atomic layer deposition technique[J]. Nanotechnology, 2008, 19(43): 435609. doi: 10.1088/0957-4484/19/43/435609

[12]

Kang H S, Kang J S, Kim J W. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films[J]. J Appl Phys, 2004, 95(3): 1246. doi: 10.1063/1.1633343

[13]

Wang M, Wang J, Chen W. Effect of preheating and annealing temperatures on quality characteristics of ZnO thin film prepared by sol-gel method[J]. Mater Chem Phys, 2006, 97(2): 219.

[14]

Lee Y C, Hu S Y, Water W. Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates[J]. J Luminescence, 2009, 129(2): 148. doi: 10.1016/j.jlumin.2008.09.003

[15]

Cheng Y C. Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition[J]. Appl Surf Sci, 2011, 258(1): 604. doi: 10.1016/j.apsusc.2011.07.124

[16]

Wen Zhanhua, Wang Li, Fang Wenqing. Influence of annealing temperature on strucatural and optical properites of ZnO thin films[J]. Chinese Journal of Semiconductors, 2005, 26(3): 498.

[17]

Xu P, Fu C, Hu C. Ultra-shallow junctions formed using microwave annealing[J]. Appl Phys Lett, 2013, 102(12): 112114.

[18]

Yeh M S, Lee Y J, Hung M F. High-performance gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation[J]. IEEE Trans Nanotechnol, 2013, 12(4): 636. doi: 10.1109/TNANO.2013.2265778

[19]

Cho T C, Lu Y L, Yao J Y. Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si[J]. ECS Journal of Solid State Science and Technology, 2013, 2(7): 293. doi: 10.1149/2.010307jss

[20]

Cui M L, Wu X M, Zhuge L J. Effects of annealing temperature on the structure and photoluminescence properties of ZnO films[J]. Vacuum, 2007, 81(7): 899. doi: 10.1016/j.vacuum.2006.10.011

[21]

Kukreja L M, Misra P, Fallert P. Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures[J]. J Appl Phys, 2012, 112(1): 013525. doi: 10.1063/1.4730774

[22]

Fang Z B, Yan Z J, Tan Y S. Influence of post-annealing treatment on the structure properties of ZnO films[J]. Appl Surf Sci, 2005, 241(3/4): 303.

[23]

Kang H S, Kang J S, Pang S S. Variation of light emitting properties of ZnO thin films depending on post-annealing temperature[J]. Mater Sci Eng B, 2003, 102(1-3): 313. doi: 10.1016/S0921-5107(02)00730-4

[24]

Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates[J]. Appl Phys Lett, 2001, 79(7): 943. doi: 10.1063/1.1394173

[1]

Zhong Sheng, Xu Xiaoqiu, Sun Lijie, Lin Bixia, Fu Zhuxi. Influence of the Annealing Temperature on the Structural and Optical Properties of N-Doped ZnO Films. J. Semicond., 2008, 29(7): 1330.

[2]

Wang Dong, Zhang Jingwen, Han Feng, Zhang Xin'an, Bi Zhen, Bian Xuming, Hou Xun. Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE. J. Semicond., 2007, 28(S1): 293.

[3]

Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, Jiang Fengyi. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD. J. Semicond., 2003, 24(3): 409.

[4]

K. Mahmood, N. Amin, A. Ali, M. Ajaz un Nabi, M. Imran Arshad, M. Zafar, M. Asghar. Enhancement of phosphors-solubility in ZnO by thermal annealing. J. Semicond., 2015, 36(12): 123001. doi: 10.1088/1674-4926/36/12/123001

[5]

Wan Qixin, Xiong Zhihua, Rao Jianping, Dai Jiangnan, Le Shuping, Wang Guping, Jiang Fengyi. First-Principles Calculation of ZnO Doped with Ag. J. Semicond., 2007, 28(5): 696.

[6]

Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Characterization of Phosphorus Diffused ZnO Bulk Single Crystals. J. Semicond., 2008, 29(9): 1674.

[7]

Zhao Bo, Li Qingshan, Zhang Ning, Chen Da, Zheng Xuegang. Optical and Electrical Properties of ZnO/PS Heterostructure. J. Semicond., 2006, 27(7): 1217.

[8]

Su Hongbo, Dai Jiangnan, Pu Yong, Wang Li, Li Fan, Fang Wenqing, Jiang Fengyi. Effect of Growth Temperature on Properties of ZnO Thin Films. J. Semicond., 2006, 27(7): 1221.

[9]

Liu Tingliang, He Xulin, Zhang Jingquan, Feng Lianghuan, Wu Lili, Li Wei, Zeng Guanggen, Li Bing. Effect of ZnO films on CdTe solar cells. J. Semicond., 2012, 33(9): 093003. doi: 10.1088/1674-4926/33/9/093003

[10]

Chang Peng, Liu Su, Chen Rongbo, Tang Ying, Han Genliang. Low Temperature Synthesis and Optical Properties of ZnO Nanowires. J. Semicond., 2007, 28(10): 1503.

[11]

Chang Yongqin, Yu Dapeng, Long Yi. Fabrication and Magnetic Property of Mn Doped ZnO Nanowires. J. Semicond., 2007, 28(S1): 296.

[12]

Ye Zhizhen, Xu Weizhong, Zeng Yujia, Jiang Liu, Zhao Binghui, Zhu Liping, Lü Jianguo, Huang Jingyun, Wang Lei, Li Xianhang. Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method. J. Semicond., 2005, 26(11): 2264.

[13]

Zhang Qifeng, Rong Yi, , Chen Xianxiang, , Zhang Gengmin, Zhang Zhaoxiang, Xue Zengquan. Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties. J. Semicond., 2006, 27(7): 1225.

[14]

Zheng Yongping, Chen Zhigao, Lu Yu, Wu Qingyun, Weng Zhenzhen, Huang Zhigao. Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO. J. Semicond., 2008, 29(12): 2316.

[15]

Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Defects and Properties of Antimony-Doped ZnO Single Crystal. J. Semicond., 2008, 29(10): 1988.

[16]

Zhang Linli, Guo Changxin, Chen Jiangang, Hu Juntao. Solution Growth of Morphology Controllable ZnO One-Dimensional Nanorods and Microrods. J. Semicond., 2005, 26(11): 2127.

[17]

Liu Li, Feng Yingliang, Yu Lianxiang, Wang Lianyuan, Zhang Tong. Preparation and Acetone Sensing Properties of Flower-Like ZnO Nanorods. J. Semicond., 2008, 29(12): 2372.

[18]

Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, Si Jianxiao, Yuan Zijian, Du Xiaoyang, Dong Shurong. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors. J. Semicond., 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001

[19]

Zhang Yuantao, Ma Yan, Zhang Baolin, Du Guotong. Effect of Hydrogenation on Luminescence Properties of ZnO Crystals. J. Semicond., 2008, 29(3): 526.

[20]

Cao Qiang, Liu Guolei, Deng Jiangxia, Xing Pengfei, Tian Yufeng, Chen Yanxue, Yan Shishen, Mei Liangmo. Single Crystalline Co-Doped ZnO Thin Films by Molecular Beam Epitaxy and Room Temperature Ferromagnetism. J. Semicond., 2007, 28(S1): 282.

Search

Advanced Search >>

GET CITATION

S R Zhao, Y B Dong, M Y Yu, X L Guo, X W Xu, Y P Jing, Y Xia. Microwave annealing effects on ZnO films deposited by atomic layer deposition[J]. J. Semicond., 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001.

Export: BibTex EndNote

Article Metrics

Article views: 694 Times PDF downloads: 10 Times Cited by: 0 Times

History

Manuscript received: 30 April 2014 Manuscript revised: 17 June 2014 Online: Published: 01 November 2014

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误