J. Semicond. > Volume 36 > Issue 1 > Article Number: 016001

Effect of H2O2 and nonionic surfactant in alkaline copper slurry

Haobo Yuan , , Yuling Liu , Mengting Jiang , Guodong Chen , Weijuan Liu and Shengli Wang

+ Author Affilications + Find other works by these authors

PDF

Abstract: For improving the polishing performance, in this article, the roles of a nonionic surfactant (Fatty alcohol polyoxyethylene ether) and H2O2 were investigated in the chemical mechanical planarization process, respectively. Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity (WIWNU) and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.

Key words: copper CMPnonionic surfactantwithin wafer non-uniformitysurface roughnesselectrochemical curvestep height

Abstract: For improving the polishing performance, in this article, the roles of a nonionic surfactant (Fatty alcohol polyoxyethylene ether) and H2O2 were investigated in the chemical mechanical planarization process, respectively. Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity (WIWNU) and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.

Key words: copper CMPnonionic surfactantwithin wafer non-uniformitysurface roughnesselectrochemical curvestep height



References:

[1]

Jiang L, He Y Y, Li Y. Synergetic effect of H2O2 and glycine on cobalt CMP in weakly alkaline slurry[J]. Microelectron Eng, 2014, 122(25): 82.

[2]

Du T B, Vijayakumar A, Desai V. Effect of hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu ions[J]. Electrochimica Acta, 2004, 49(25): 4505.

[3]

Lee D W, Kim N H, Chang E G. Effect of nonionic surfactants on the stability of alumina slurry for Cu CMP[J]. Mater Sci Eng B, 2005, 118(1-3): 293.

[4]

Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization[J]. Microelectron Eng, 2008, 85(4): 689.

[5]

Lee H, Park B, Jeong H. Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization[J]. Journal of Materials Processing Technology, 2009, 209(4): 1729.

[6]

DeNardis D, Rosales-Yeomans D, Borucki L. A three-step copper chemical mechanical planarization model including the dissolution effects of a commercial slurry[J]. Thin Solid Films, 2010, 518(14): 3910.

[7]

Li Y, Liu Y L, Niu X H. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J]. Journal of Semiconductors, 2014, 35(1): 016001.

[8]

Wang C W, Liu Y L, Tian J Y. A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal[J]. Microelectron Eng, 2012, 98(2): 29.

[9]

Hu Y, Liu Y L, Liu X Y. Effect of copper slurry on polishing characteristics[J]. Journal of Semiconductors, 2011, 32(11): 116001.

[10]

Bernard P, Kapsa P, Coud' T. Influence of surfactant and salts on chemical mechanical planarization of copper[J]. Wear, 2005, 259(7-12): 1367.

[11]

Shin W K, An J H, Jeong H D. Optimization of the physical cleaning condition for nanotechnology[J]. CIRP Annals-Manufacturing Technology, 2011, 60(1): 579.

[12]

Gao B H, Zhu Y D, Liu Y L. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers[J]. Journal of Semiconductors, 2010, 31(7): 076002.

[13]

Oh Y J, Park G S, Chung C H. Planarization of copper layer for damascene interconnection by electrochemical polishing in alkali-based solution[J]. J Electrochem Soc, 2006, 153(7).

[14]

Finšgar M, Milošev I. Inhibition of copper corrosion by 1,2,3-benzotriazole: a review[J]. Corrosion Science, 2010, 52(9): 2737.

[1]

Jiang L, He Y Y, Li Y. Synergetic effect of H2O2 and glycine on cobalt CMP in weakly alkaline slurry[J]. Microelectron Eng, 2014, 122(25): 82.

[2]

Du T B, Vijayakumar A, Desai V. Effect of hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu ions[J]. Electrochimica Acta, 2004, 49(25): 4505.

[3]

Lee D W, Kim N H, Chang E G. Effect of nonionic surfactants on the stability of alumina slurry for Cu CMP[J]. Mater Sci Eng B, 2005, 118(1-3): 293.

[4]

Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization[J]. Microelectron Eng, 2008, 85(4): 689.

[5]

Lee H, Park B, Jeong H. Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization[J]. Journal of Materials Processing Technology, 2009, 209(4): 1729.

[6]

DeNardis D, Rosales-Yeomans D, Borucki L. A three-step copper chemical mechanical planarization model including the dissolution effects of a commercial slurry[J]. Thin Solid Films, 2010, 518(14): 3910.

[7]

Li Y, Liu Y L, Niu X H. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J]. Journal of Semiconductors, 2014, 35(1): 016001.

[8]

Wang C W, Liu Y L, Tian J Y. A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal[J]. Microelectron Eng, 2012, 98(2): 29.

[9]

Hu Y, Liu Y L, Liu X Y. Effect of copper slurry on polishing characteristics[J]. Journal of Semiconductors, 2011, 32(11): 116001.

[10]

Bernard P, Kapsa P, Coud' T. Influence of surfactant and salts on chemical mechanical planarization of copper[J]. Wear, 2005, 259(7-12): 1367.

[11]

Shin W K, An J H, Jeong H D. Optimization of the physical cleaning condition for nanotechnology[J]. CIRP Annals-Manufacturing Technology, 2011, 60(1): 579.

[12]

Gao B H, Zhu Y D, Liu Y L. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers[J]. Journal of Semiconductors, 2010, 31(7): 076002.

[13]

Oh Y J, Park G S, Chung C H. Planarization of copper layer for damascene interconnection by electrochemical polishing in alkali-based solution[J]. J Electrochem Soc, 2006, 153(7).

[14]

Finšgar M, Milošev I. Inhibition of copper corrosion by 1,2,3-benzotriazole: a review[J]. Corrosion Science, 2010, 52(9): 2737.

[1]

Jiaojiao Gao, Yuling Liu, Chenwei Wang, Jin Cui. Mechanism analysis of the affect the copper line surface roughness after FA/O alkaline barrier CMP. J. Semicond., 2014, 35(12): 126003. doi: 10.1088/1674-4926/35/12/126003

[2]

Yan Li, Ming Sun, Xinhuan Niu, Yuling Liu, Yangang He, Hailong Li, Aochen Wang, Hongbo Li. Removal of residual CuO particles on the post CMP wafer surface of multi-layered copper. J. Semicond., 2014, 35(4): 046001. doi: 10.1088/1674-4926/35/4/046001

[3]

Yan Li, Yuling Liu, Xinhuan Niu, Xiaofeng Bu, Hongbo Li, Jiying Tang, Shiyan Fan. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration. J. Semicond., 2014, 35(1): 016001. doi: 10.1088/1674-4926/35/1/016001

[4]

Yanlei Li, Yuling Liu, Chenwei Wang, Yue Li. Synergetic effect of chelating agent and nonionic surfactant for benzotriazoleremoval on post Cu-CMP cleaning. J. Semicond., 2016, 37(8): 086001. doi: 10.1088/1674-4926/37/8/086001

[5]

Aochen Wang, Shengli Wang, Yuling Liu, Yan Li. Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor. J. Semicond., 2014, 35(2): 026003. doi: 10.1088/1674-4926/35/2/026003

[6]

Haobo Yuan, Yuling Liu, Mengting Jiang, Weijuan Liu, Guodong Chen. Effect of chelating agent concentration in alkaline Cu CMP process under the condition of different applied pressures. J. Semicond., 2014, 35(11): 116005. doi: 10.1088/1674-4926/35/11/116005

[7]

Bo Duan, Jianwei Zhou, Yuling Liu, Mingbin Sun, Yufeng Zhang. Surface roughness of optical quartz substrate by chemical mechanical polishing. J. Semicond., 2014, 35(11): 116001. doi: 10.1088/1674-4926/35/11/116001

[8]

Rui Chen, Jin Kang, Yuling Liu, Chenwei Wang, Ting Cai, Xin Li. A new weakly alkaline slurry for copper planarization at a reduced down pressure. J. Semicond., 2014, 35(2): 026005. doi: 10.1088/1674-4926/35/2/026005

[9]

Bo Duan, Jianwei Zhou, Yuling Liu, Chenwei Wang, Yufeng Zhang. Investigation on surface roughness in chemical mechanical polishing of TiO2 thin film. J. Semicond., 2014, 35(6): 063003. doi: 10.1088/1674-4926/35/6/063003

[10]

Shiyan Fan, Yuling Liu, Ming Sun, Jiying Tang, Chenqi Yan, Hailong Li, Shengli Wang. Next generation barrier CMP slurry with novel weakly alkaline chelating agent. J. Semicond., 2015, 36(1): 016002. doi: 10.1088/1674-4926/36/1/016002

[11]

Liu Yang, Baimei Tan, Yuling Liu, Baohong Gao, Chunyu Han. Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning. J. Semicond., 2018, 39(12): 126002. doi: 10.1088/1674-4926/39/12/126002

[12]

Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu, Yan Zhang. A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning. J. Semicond., 2015, 36(10): 106002. doi: 10.1088/1674-4926/36/10/106002

[13]

Xiaoqing Wang, Yude Yu, Jin Ning. Researching the silicon direct wafer bonding with interfacial SiO2 layer. J. Semicond., 2016, 37(5): 056001. doi: 10.1088/1674-4926/37/5/056001

[14]

Khushnuma Asghar, D. Das. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface. J. Semicond., 2016, 37(3): 036001. doi: 10.1088/1674-4926/37/3/036001

[15]

Wang Chenwei, Liu Yuling, Niu Xinhuan, Tian Jianying, Gao Baohong, Zhang Xiaoqiang. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers. J. Semicond., 2012, 33(4): 046001. doi: 10.1088/1674-4926/33/4/046001

[16]

Bo Duan, Jianwei Zhou, Yuling Liu, Chenwei Wang, Yufeng Zhang. Slurry components of TiO2 thin film in chemical mechanical polishing. J. Semicond., 2014, 35(10): 106003. doi: 10.1088/1674-4926/35/10/106003

[17]

Wang Cailing, Kang Renke, Jin Zhuji, Guo Dongming. Effects of the reciprocating parameters of the carrier on material removal rate and non-uniformity in CMP. J. Semicond., 2010, 31(12): 126001. doi: 10.1088/1674-4926/31/12/126001

[18]

Mingbin Sun, Baohong Gao, Chenwei Wang, Yingxin Miao, Bo Duan, Baimei Tan. Non-ionic surfactant on particles removal in post-CMP cleaning. J. Semicond., 2015, 36(2): 026002. doi: 10.1088/1674-4926/36/2/026002

[19]

Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan, Yue Hongwei. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP. J. Semicond., 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001

[20]

Gao Baohong, Zhu Yadong, Liu Yuling, Wang Shengli, Zhou Qiang, Liu Xiaoyan. A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers. J. Semicond., 2010, 31(7): 076002. doi: 10.1088/1674-4926/31/7/076002

Search

Advanced Search >>

GET CITATION

H B Yuan, Y L Liu, M T Jiang, G D Chen, W J Liu, S L Wang. Effect of H2O2 and nonionic surfactant in alkaline copper slurry[J]. J. Semicond., 2015, 36(1): 016001. doi: 10.1088/1674-4926/36/1/016001.

Export: BibTex EndNote

Article Metrics

Article views: 618 Times PDF downloads: 10 Times Cited by: 0 Times

History

Manuscript received: 03 June 2014 Manuscript revised: Online: Published: 01 January 2015

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误