J. Semicond. > Volume 36 > Issue 11 > Article Number: 115001

Analysis and RHBD technique of single event transients in PLLs

Zhiwei Han 1, , , Liang Wang 1, , , Suge Yue 1, 2, , Bing Han 1, and Shougang Du 1,

+ Author Affilications + Find other works by these authors

PDF

Abstract: Single-event transient susceptibility of phase-locked loops has been investigated. The charge pump is the most sensitive component of the PLL to SET, and it is hard to mitigate this effect at the transistor level. A test circuit was designed on a 65 nm process using a new system-level radiation-hardening-by-design technique. Heavy-ion testing was used to evaluate the radiation hardness. Analyses and discussion of the feasibility of this method are also presented.

Key words: phase locked loop (PLL)radiation effectsingle-event transient (SET)radiation-hardening-by-design (RHBD)

Abstract: Single-event transient susceptibility of phase-locked loops has been investigated. The charge pump is the most sensitive component of the PLL to SET, and it is hard to mitigate this effect at the transistor level. A test circuit was designed on a 65 nm process using a new system-level radiation-hardening-by-design technique. Heavy-ion testing was used to evaluate the radiation hardness. Analyses and discussion of the feasibility of this method are also presented.

Key words: phase locked loop (PLL)radiation effectsingle-event transient (SET)radiation-hardening-by-design (RHBD)



References:

[1]

Petersen E L, Koga R, Shoga M A. The single event revolution[J]. IEEE Trans Nucl Sci, 2013, 60(3): 1824.

[2]

Chung H H, Chen W J, Bakkaloglu B. Analysis of single events effects on monolithic PLL frequency synthesizers[J]. IEEE Trans Nucl Sci, 2006, 53(6): 3539.

[3]

Loveless T D, Bhuva B L, Holman W T. A hardened-by-design technique for RF digital phase-locked loops[J]. IEEE Trans Nucl Sci, 2006, 53(6): 3432.

[4]

Loveless T D, Massengill L W, Bhuva B L. A probabilistic analysis technique applied to a radiation-hardened-by-design voltage-controlled oscillator for mixed-signal phase-locked loops[J]. IEEE Trans Nucl Sci, 2008, 55(6): 3447.

[5]

Sengupta R, Vermeire B, Clark L T. A 133 MHz radiation-hardened delay-locked loop[J]. IEEE Trans Nucl Sci, 2010, 57(6): 3626.

[6]

Wang L, Yue S, Zhao Y. An SEU-tolerant programmable frequency divider[J]. Proceeding of the 8th International Symposium on Quality Electronic Design (ISQED'07), 2007: 899.

[7]

Zhao X, Wang L, Yue S. Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)[J]. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013.

[1]

Petersen E L, Koga R, Shoga M A. The single event revolution[J]. IEEE Trans Nucl Sci, 2013, 60(3): 1824.

[2]

Chung H H, Chen W J, Bakkaloglu B. Analysis of single events effects on monolithic PLL frequency synthesizers[J]. IEEE Trans Nucl Sci, 2006, 53(6): 3539.

[3]

Loveless T D, Bhuva B L, Holman W T. A hardened-by-design technique for RF digital phase-locked loops[J]. IEEE Trans Nucl Sci, 2006, 53(6): 3432.

[4]

Loveless T D, Massengill L W, Bhuva B L. A probabilistic analysis technique applied to a radiation-hardened-by-design voltage-controlled oscillator for mixed-signal phase-locked loops[J]. IEEE Trans Nucl Sci, 2008, 55(6): 3447.

[5]

Sengupta R, Vermeire B, Clark L T. A 133 MHz radiation-hardened delay-locked loop[J]. IEEE Trans Nucl Sci, 2010, 57(6): 3626.

[6]

Wang L, Yue S, Zhao Y. An SEU-tolerant programmable frequency divider[J]. Proceeding of the 8th International Symposium on Quality Electronic Design (ISQED'07), 2007: 899.

[7]

Zhao X, Wang L, Yue S. Single event transients of scan flip-flop and an SET-immune redundant delay filter (RDF)[J]. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013.

[1]

Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions. J. Semicond., 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001

[2]

Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua. Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts. J. Semicond., 2007, 28(2): 171.

[3]

Liu Biwei, Chen Shuming, Liang Bin, Liu Zheng. Coupled SET Pulse Injection in a Circuit Simulator in Ultra-Deep Submicron Technology. J. Semicond., 2008, 29(9): 1819.

[4]

Han Benguang, Guo Zhongjie, Wu Longsheng, Liu Youbao. A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique. J. Semicond., 2012, 33(10): 105007. doi: 10.1088/1674-4926/33/10/105007

[5]

Zhao Zhenyu, Zhang Minxuan, Chen Shuming, Chen Jihua, Li Junfeng. A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs. J. Semicond., 2009, 30(12): 125009. doi: 10.1088/1674-4926/30/12/125009

[6]

Wang Zhongming, Yao Zhibin, Guo Hongxia, Lü Min. A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs. J. Semicond., 2011, 32(5): 055008. doi: 10.1088/1674-4926/32/5/055008

[7]

Haisong Li, Longsheng Wu, Bo Yang, Yihu Jiang. Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell. J. Semicond., 2017, 38(8): 085009. doi: 10.1088/1674-4926/38/8/085009

[8]

Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin, Xiang Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor. J. Semicond., 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007

[9]

Hongchao Zheng, Yuanfu Zhao, Suge Yue, Long Fan, Shougang Du, Maoxin Chen, Chunqing Yu. The single-event effect evaluation technology for nano integrated circuits. J. Semicond., 2015, 36(11): 115002. doi: 10.1088/1674-4926/36/11/115002

[10]

Suge Yue, Xiaolin Zhang, Yuanfu Zhao, Lin Liu. Modeling and simulation of single-event effect in CMOS circuit. J. Semicond., 2015, 36(11): 111002. doi: 10.1088/1674-4926/36/11/111002

[11]

Faen Liu, Zhigong Wang, Zhiqun Li, Qin Li, Sheng Chen. Design of improved CMOS phase-frequency detector and charge-pump for phase-locked loop. J. Semicond., 2014, 35(10): 105006. doi: 10.1088/1674-4926/35/10/105006

[12]

Duan Xueyan, Wang Liyun, Lai Jinmei. Effect of charge sharing on the single event transient response of CMOS logic gates. J. Semicond., 2011, 32(9): 095008. doi: 10.1088/1674-4926/32/9/095008

[13]

Jiang Lu, Hainan Liu, Xiaowu Cai, Jiajun Luo, Bo Li, Binhong Li, Lixin Wang, Zhengsheng Han. Single-event burnout hardening of planar power MOSFET with partially widened trench source. J. Semicond., 2018, 39(3): 034003. doi: 10.1088/1674-4926/39/3/034003

[14]

Li Zhiqun, Zheng Shuangshuang, Hou Ningbing. Design of a high performance CMOS charge pump for phase-locked loop synthesizers. J. Semicond., 2011, 32(7): 075007. doi: 10.1088/1674-4926/32/7/075007

[15]

Zhang Lin, Zhang Yimen, Zhang Yuming, Han Chao. Neutron radiation effect on 4H-SiC MESFETs and SBDs. J. Semicond., 2010, 31(11): 114006. doi: 10.1088/1674-4926/31/11/114006

[16]

, , . Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs. J. Semicond., 2005, 26(2): 234.

[17]

Huang Zhengfeng, Liang Huaguo. A novel radiation hardened by design latch. J. Semicond., 2009, 30(3): 035007. doi: 10.1088/1674-4926/30/3/035007

[18]

Leilei Li, Xinjie Zhou, Zongguang Yu, Qing Feng. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation. J. Semicond., 2015, 36(1): 014006. doi: 10.1088/1674-4926/36/1/014006

[19]

Xinhong Hong, Liyang Pan, Wendi Zhang, Dongmei Ji, Dong Wu, Chen Shen, Jun Xu. Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening. J. Semicond., 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003

[20]

M. Ashry, S. Fares. Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells. J. Semicond., 2012, 33(10): 102001. doi: 10.1088/1674-4926/33/10/102001

Search

Advanced Search >>

GET CITATION

Z W Han, L Wang, S G Yue, B Han, S G Du. Analysis and RHBD technique of single event transients in PLLs[J]. J. Semicond., 2015, 36(11): 115001. doi: 10.1088/1674-4926/36/11/115001.

Export: BibTex EndNote

Article Metrics

Article views: 738 Times PDF downloads: 8 Times Cited by: 0 Times

History

Manuscript received: 11 June 2015 Manuscript revised: Online: Published: 01 November 2015

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误