J. Semicond. > 2015, Volume 36 > Issue 3 > 033002
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SEMICONDUCTOR MATERIALS

Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique

M. A. Mahadik, Y. M. Hunge, S. S. Shind, K. Y. Rajpure and C. H. Bhosale

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 Corresponding author: S. S. Shind, E-mail: physics.sambhaji2006@gmail.com

DOI: 10.1088/1674-4926/36/3/033002

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Abstract: Highly transparent and preferential c-axis oriented nanocrystalline undoped and Al doped zinc oxide (AZO) thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal (wurtzite) crystal structure having (002) preferred orientation is formed. The atomic force microscope (AFM) shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss (tan δ) were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy.

Key words: aluminum, zinc oxide, structural, morphological and dielectrical properties



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Fig. 1.  X-ray patterns of undoped ZnO and 2 at % AZO thin films.

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Fig. 2.  (a) AFM images of (A) undoped ZnO films deposited on glass substrate, (B) AZO film containing 1 at % Al, (C) AZO film containing 2 at % Al, (D) AZO film containing 3 at % Al, (E) AZO film containing 4 at % Al, and (F) AZO film containing 5 at % Al. (b) SEM images of the undoped and 2 at % Al-doped thin films.

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Fig. 3.  Plots of absorbance ($\alpha t$) versus wavelength and inset shows the plots of ($\alpha h\nu)^{2}$ versus photon energy ($h \nu)$ for undoped and 2 at % AZO films.

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Fig. 4.  (a) PL spectra of AZO thin films, inset shows Gaussian fitting for typical 2 at % Al-doped ZnO thin film. (b) Schematic representations of calculated defect levels in ZnO thin films.

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Fig. 5.  Contact angles of water droplet for (a) undoped ZnO, (b) 1 at % Al-doped ZnO, (c) 2 at % Al-doped ZnO, (d) 3 at % Al-doped ZnO, (e) 4 at % Al-doped ZnO, and (f) 5 at % Al-doped ZnO thin films.

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Fig. 6.  Variation of thermo-emf versus temperature difference for the typical 2 at % AZO thin films.

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Fig. 7.  Variation of dielectric constant ($\varepsilon )$ with frequency for the undoped and AZO thin films.

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Fig. 8.  Variation of dielectric loss factor (tan $\delta)$ with frequency for the undoped and AZO thin films.

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Fig. 9.  Nyquist plots of undoped and aluminum-doped ZnO thin films.

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    Received: 23 September 2014 Revised: Online: Published: 01 March 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(3): 033002
      M. A. Mahadik, Y. M. Hunge, S. S. Shind, K. Y. Rajpure, C. H. Bhosale. Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique[J]. Journal of Semiconductors, 2015, 36(3): 033002. doi: 10.1088/1674-4926/36/3/033002 ****M. A. Mahadik, Y. M. Hunge, S. S. Shind, K. Y. Rajpure, C. H. Bhosale. Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique[J]. J. Semicond., 2015, 36(3): 033002. doi: 10.1088/1674-4926/36/3/033002.
      Citation:
      M. A. Mahadik, Y. M. Hunge, S. S. Shind, K. Y. Rajpure, C. H. Bhosale. Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique[J]. Journal of Semiconductors, 2015, 36(3): 033002. doi: 10.1088/1674-4926/36/3/033002 ****
      M. A. Mahadik, Y. M. Hunge, S. S. Shind, K. Y. Rajpure, C. H. Bhosale. Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique[J]. J. Semicond., 2015, 36(3): 033002. doi: 10.1088/1674-4926/36/3/033002.
      shu

      Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique

      DOI: 10.1088/1674-4926/36/3/033002

      • Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, India

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      • Corresponding author: E-mail: physics.sambhaji2006@gmail.com
      • Received Date: 2014-09-23
      • Accepted Date: 2014-10-12
      • Published Date: 2015-01-25

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