H Kaur, K S Sandha. Effect of electric field on metallic SWCNT interconnects for nanoscale technologies[J]. J. Semicond., 2015, 36(3): 035001. doi: 10.1088/1674-4926/36/3/035001.
Abstract: The influence of an electric field on metallic single walled carbon nanotube (SWCNT) interconnects is studied. A voltage-dependent equivalent circuit model is presented for the impedance parameters of single-wall carbon nanotubes that capture various electron—phonon scattering mechanisms as a function of the electric field. To estimate the performance of SWCNT bundle interconnects, signal delay and power dissipation are calculated based on the field dependent model that results in an improvement in the delay and power estimation accuracy compared to the field-independent model. We find that the power delay product of a SWCNT bundle increases with the increase in electric field but decreases with technology scaling showing that at a low electric field, the SWCNT bundle is a potential reliable alternative interconnect for future high performance VLSI industry at scaled technologies.
Key words: carbon nanotube, single wall carbon nanotube, metallic single wall carbon nanotube, multiwall carbon nanotube, very large scale integration
Abstract: The influence of an electric field on metallic single walled carbon nanotube (SWCNT) interconnects is studied. A voltage-dependent equivalent circuit model is presented for the impedance parameters of single-wall carbon nanotubes that capture various electron—phonon scattering mechanisms as a function of the electric field. To estimate the performance of SWCNT bundle interconnects, signal delay and power dissipation are calculated based on the field dependent model that results in an improvement in the delay and power estimation accuracy compared to the field-independent model. We find that the power delay product of a SWCNT bundle increases with the increase in electric field but decreases with technology scaling showing that at a low electric field, the SWCNT bundle is a potential reliable alternative interconnect for future high performance VLSI industry at scaled technologies.
Key words:
carbon nanotube, single wall carbon nanotube, metallic single wall carbon nanotube, multiwall carbon nanotube, very large scale integration
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Sarkar S, Rai M K, Spandana G. Power Dissipation in SWCNT-interconnect[J]. International Conference on Computers and Devices for Communication, 2009: 1. |
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Bakoglu H B, Meindl J D. Optimal interconnection circuits for VLSI[J]. IEEE Trans Electron Devices, 1985, 32(5): 903. |
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Wu P, Huang N Y, Deng S Z. The influence of temperature and electric field on field emission energy distribution of an individual single-wall carbon nanotube[J]. Appl Phys Lett, 2009, 94(26): 263105. |
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http://ptm . asu[J]. . |
| [1] |
Davis J A, Meindl J D. Compact distributed RLC interconnect models——Part I: single line transient, time delay and overshoot expressions[J]. IEEE Trans Electron Devices, 2000, 47(11): 2068. |
| [2] |
Banerjee K, Srivastava N. Are carbon nano tubes the future of VLSI in interconnections. 43rd Association of Computing Machinery (ACM)/IEEE Design Automation Conference Proceedings[J]. San Francisco, CA, July, 2006: 809. |
| [3] |
Watson T J. Basic problems for electromigration in VLSI applications[J]. IEEE 20th Annual conference PROC Reliability Physics Symposium, 1982: 288. |
| [4] |
Lyshevski M A. Carbon nanotubes analysis, classification and characterization[J]. 4th IEEE Conference on Nanotechnology, 2004: 527. |
| [5] |
Marulanda J M. Electronic properties of carbon nanotubes[J]. Croatia: Intech, 2011. |
| [6] |
Li H, Banerjee K. High-frequency analysis of carbon nanotube interconnects and implications for on-chip inductor design[J]. IEEE Trans Electron Devices, 2009, 56(10): 2202. |
| [7] |
Li J, Ye Q, Cassell A. Bottom-up approach for carbon nanotube interconnects[J]. Appl Phys, 2003, 82(15): 2491. |
| [8] |
Sarkar S, Rai M K. Influence of tube diameter on carbon nanotube interconnect delay and power output[J]. Physica Status Solidi A, 2011, 298(3): 735. |
| [9] |
Yin W Y, Zhao W S. Modeling of carbon nanotube (CNT) interconnects[J]. 15th IEEE Workshop on Signal Propagation on Interconnects (SPI), May, 2011: 79. |
| [10] |
Banerjee K, Srivastava N. A comparative scaling analysis of metallic and carbon nanotube interconnections for nanometer scale VLSI technologies[J]. 21st International VLSI Multilevel Interconnect Conference, 2004: 393. |
| [11] |
Burke P J. Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes[J]. IEEE Trans Nanotechnol, 2002, 1(3): 129. |
| [12] |
Ward J W, Nichols J, Stachowiak T B. Reduction of CNT interconnect resistance for the replacement of Cu for future technology nodes[J]. IEEE Trans Nanotechnol, 2012, 11(1): 56. |
| [13] |
Parihar T, Sharma A. A comparative study of mixed CNT bundle with copper for VLSI interconnect at 32 nm[J]. International Journal of Engineering Trends and Technology (IJETT), 2013, 4(4): 1145. |
| [14] |
Park J Y, Rosenblatt S, Yaish Y. Electron—phonon scattering in metallic single-walled carbon nanotube[J]. Nano Lett, 2004, 4(3): 517. |
| [15] |
Chen W C, Yin W Y, Jia L. Electrothermal characterization of single-walled carbon nanotube (SWCNT) interconnect arrays[J]. IEEE Trans Nanotechnol, 2009, 8(6): 718. |
| [16] |
Hosseini A, Shabro V. Thermally-aware modeling and performance evaluation for single-walled carbon nanotube-based interconnects for future high performance integrated circuits[J]. Microelectronic Engineering, 2010, 87(10): 1955. |
| [17] |
Wong H S P, Akinwade D. Carbon nanotube and graphene device physics[J]. New York: Cambridge University Press, 2011. |
| [18] |
Bhattacharya S, Amalraj R, Mahapatra S. Physics-based thermal conductivity model for metallic single-walled carbon nanotube interconnects[J]. IEEE Electron Device Lett, 2011, 32(2): 203. |
| [19] |
Pop E. The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes[J]. Nanotechnology, 2008, 19(29): 295202. |
| [20] |
McEuen P L, Fuhrer M S, Park H. Single-walled carbon nanotube electronics[J]. IEEE Trans Nanotechnol, 2002, 1(1): 78. |
| [21] |
Srivastava N, Li H, Kreupl F. On the applicability of single-walled carbon nanotubes as VLSI interconnects[J]. IEEE Trans Nanotechnol, 2009, 8(4): 542. |
| [22] |
Alam N, Kureshi A K, Hasan M. Analysis of carbon nanotube interconnects and their comparison with Cu interconnects[J]. International Conference on Multimedia, Signal Processing and Communication Technologies, 2009: 124. |
| [23] |
Roy K, Raychowdhury A. Modeling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with cu interconnects for scaled technologies[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2006, 25(1): 58. |
| [24] |
Srivastava N, Banerjee K. Performance analysis of carbon nanotube interconnects for VLSI applications[J]. IEEE/ACM International Conference on ICCAD, 2005: 383. |
| [25] |
Ragab T, Basaran C. Joule heating in single-walled carbon nanotubes[J]. Appl Phys, 2009, 106(6): 063705. |
| [26] |
Pop E, Mann D A, Goodson K E. Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates[J]. Appl Phys, 2007, 101(9): 093710. |
| [27] |
http://www . itrs[J]. . |
| [28] |
Sarkar S, Rai M K, Spandana G. Power Dissipation in SWCNT-interconnect[J]. International Conference on Computers and Devices for Communication, 2009: 1. |
| [29] |
Bakoglu H B, Meindl J D. Optimal interconnection circuits for VLSI[J]. IEEE Trans Electron Devices, 1985, 32(5): 903. |
| [30] |
Wu P, Huang N Y, Deng S Z. The influence of temperature and electric field on field emission energy distribution of an individual single-wall carbon nanotube[J]. Appl Phys Lett, 2009, 94(26): 263105. |
| [31] |
http://ptm . asu[J]. . |
H Kaur, K S Sandha. Effect of electric field on metallic SWCNT interconnects for nanoscale technologies[J]. J. Semicond., 2015, 36(3): 035001. doi: 10.1088/1674-4926/36/3/035001.
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Manuscript received: 24 April 2014 Manuscript revised: Online: Published: 01 March 2015
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