SEMICONDUCTOR INTEGRATED CIRCUITS

An ISM 2.4 GHz low power low-IF RF receiver front-end

Heping Ma, Hua Xu, Bei Chen and Yin Shi

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 Corresponding author: Ma Heping, hpma@semi.ac.cn

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Abstract: This paper describes the implementation of an RF receiver front-end for the 2.4 GHz industrial scientific medical band under TSMC 0.13μm CMOS technology; it comprises a low noise amplifier (LNA) which uses an added gate-source capacitor for low power performance and a dual-converter composed of a single-balanced active RF mixer and double-balanced passive IF mixer. Dual-down-conversion technique is used for reducing power. A 2.4 GHz low power low-IF RF receiver front-end is proposed. An LNA for rejecting image signal, an inductor-capacitor (LC) tank is used in series with source of input-stage transistor of the RF mixer, and combined with the LC load of the LNA, 30-dB image rejection is realized. Fabricated in a 0.13μm CMOS process, the proposed chip occupies 0.42 mm2 area, achieves 4 dB noise figure, -22 dBm IIP3 and 37 dB voltage gain dissipating only 4.2-mW under 1.2-V supply.

Key words: front-endlow-IFlow powerLNAmixer



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Fig1.  The topology architecture of the proposed front-end.

Fig2.  Simulation results of the $S$ parameter of the LNA.

Fig3.  (a) The brief schematic of the presented LNA. (b) The small signal model of the presented LNA.

Fig4.  Circuit design of the presented LNA.

Fig5.  Simulated noise figure of the LNA.

Fig6.  Circuit design of the RF mixer. (a) LO buffer. (b) RF mixer. (c) The M4 bias in RF mixer.

.  The proposed IF mixer. (a) Circuit of the mixer. (b) Equivalent circuit of input stage seen from the switches.

Fig.7


Fig8.  LO buffer for IF mixer.

Fig9.  Die micrograph of the test chip.

Fig10.  Measurement results of the LNA. (a) $S$-parameters. (b) Noise figure.

.  Measured output signal of the front-end.

Fig.11


.  Measured IIP3 of the front-end. (a) HG-mode. (b) LG-mode.

Fig.12


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Table 1.   Summary of the front-end experimental results.

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Table 2.   Front-end performance comparison with state of the art.

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    Received: 27 November 2014 Revised: Online: Published: 01 August 2015

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      Heping Ma, Hua Xu, Bei Chen, Yin Shi. An ISM 2.4 GHz low power low-IF RF receiver front-end[J]. Journal of Semiconductors, 2015, 36(8): 085002. doi: 10.1088/1674-4926/36/8/085002 H P Ma, H Xu, B Chen, Y Shi. An ISM 2.4 GHz low power low-IF RF receiver front-end[J]. J. Semicond., 2015, 36(8): 085002. doi: 10.1088/1674-4926/36/8/085002.Export: BibTex EndNote
      Citation:
      Heping Ma, Hua Xu, Bei Chen, Yin Shi. An ISM 2.4 GHz low power low-IF RF receiver front-end[J]. Journal of Semiconductors, 2015, 36(8): 085002. doi: 10.1088/1674-4926/36/8/085002

      H P Ma, H Xu, B Chen, Y Shi. An ISM 2.4 GHz low power low-IF RF receiver front-end[J]. J. Semicond., 2015, 36(8): 085002. doi: 10.1088/1674-4926/36/8/085002.
      Export: BibTex EndNote

      An ISM 2.4 GHz low power low-IF RF receiver front-end

      doi: 10.1088/1674-4926/36/8/085002
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      • Corresponding author: Ma Heping, hpma@semi.ac.cn
      • Received Date: 2014-11-27
      • Accepted Date: 2015-04-05
      • Published Date: 2015-01-25

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