J. Semicond. > Volume 36 > Issue 8 > Article Number: 085004

Design of broadband class-F power amplifier for multiband LTE handsets applications

Yaohua Zheng , Guohao Zhang , , Ruiqing Zheng , Sizhen Li , Junming Lin and Sidi Chen

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Abstract: A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3-2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.

Key words: long term evolution (LTE)power amplifierbroadbandmultibandInGaP/GaAs HBT

Abstract: A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3-2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.

Key words: long term evolution (LTE)power amplifierbroadbandmultibandInGaP/GaAs HBT



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[2]

Cripps S C. RF power amplifier for wireless communications[J]. Artech House Publishers, 2006.

[3]

Cho Y, Kang D, Kim J. A dual power-mode multi-band power amplifier with envelope tracking for handset applications[J]. IEEE Trans Microw Theory Tech, 2013, 61(4): 1608.

[4]

Chen K, Peroulis D. Design of broadband highly efficient harmonic-tuned power amplifier using in-band continuous class-F-1/F mode transferring[J]. IEEE Trans Microw Theory Tech, 2012, 60: 4107.

[5]

Kim D, Choi J, Kang D. High efficiency and wideband ET PA with sweet spot tracking[J]. Proc IEEE RFreq Integr Circuits Symp, 2010: 255.

[6]

Dutta G, Basu S. Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect[J]. Journal of Semiconductors, 2012, 33(5): 054002.

[7]

Kang D, Yu D, Min K. A highly efficient and linear cass-AB/F power amplifier for multimode operation[J]. IEEE Trans Microw Theory Tech, 2008, 56(1): 77.

[8]

Frederick H. Maximum efficiency and output of class-F power amplifiers[J]. IEEE Trans Microw Theory Tech, 2001, 49(6): 1162.

[9]

Wu Tuo, Chen Hongyi, Qian Dahong. Theoretical analysis and an improvement method of bias effect on the linearity of RF linear power amplifiers[J]. Journal of Semiconductors, 2009, 30(5): 055002.

[10]

Zhao Y, Metzger A G, Zampardi P J. Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model[J]. , IEEE Trans Microw Theory Tech, 2006, 54(12): 4479.

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Jin S, Kwon M, Moon K. Control of IMD asymmetry of CMOS power amplifiers for broadband operation using wideband signal[J]. IEEE Trans Microw Theory Tech, 2013, 61(10): 3753.

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Kang D, Kim D, Cho Y. Design of bandwidth enhanced Doherty power amplifiers for handset applications[J]. IEEE Trans Microw Theory Tech, 2011, 59(12): 3474.

[13]

Hassan M, Larson L E, Leung V W. A wideband CMOS/GaAs HBT envelope tracking power amplifier for 4G LTE mobile terminal applications[J]. IEEE Trans Microw Theory Tech, 2012, 60(5): 1321.

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Y H Zheng, G H Zhang, R Q Zheng, S Z Li, J M Lin, S D Chen. Design of broadband class-F power amplifier for multiband LTE handsets applications[J]. J. Semicond., 2015, 36(8): 085004. doi: 10.1088/1674-4926/36/8/085004.

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History

Manuscript received: 13 January 2015 Manuscript revised: Online: Published: 01 August 2015

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