J. Semicond. > Volume 37 > Issue 10 > Article Number: 104004

Optimizing back surface field for improving Voc of(Al)GaInP solar cell

Hongbo Lu , , Xinyi Li , Wei Zhang , Dayong Zhou , Lijie Sun and Kaijian Chen

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Abstract: GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.

Key words: back surface fieldGaInP solar cellsMOCVD

Abstract: GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.

Key words: back surface fieldGaInP solar cellsMOCVD



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[1]

Chiu P T, Law D C, Singer S B. High performance 5J and 6J direct bonded (SBT) space solar cells[J]. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 35: 363.

[2]

Yang Y, Tu J, Li L. Simulation and discuss of optical match for triple-junction GaAs tandem solar cell[J]. Journal of Yunnan Normal University, 2010, 254: 61.

[3]

Lu Hongbo, Li Xinyi, Zhang Wei. A 2.05 eV AlGaInP sub-cell used in next generation solar cells[J]. Journal of Semiconductors, 2014, 35(9): 094010. doi: 10.1088/1674-4926/35/9/094010

[4]

Almansouri I, Bremner S, Ho-Baillie A. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density[J]. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 136: 029.

[5]

Gregory B L. Minority carrier recombination in neutron irradiated silicon[J]. IEEE Trans Nucl Sci, 1969, 56: 69.

[6]

Friedman D J, Kurtz S R. Back surface fields for GaInP2 solar cell[J]. IEEE Photovoltaic Specialists Conference, 1991, 01: 358.

[7]

Kurtz S R, Olson J M, Friedman D J. Effect of front-surface doping on back-surface passivation in Ga0.5P cells[J]. IEEE Photovoltaic Specialists Conference, 1997, 132: 819.

[8]

King R R, Sinton R A, Swanson R M. Front and back surface fields for point-contact solar cells[J]. IEEE Photovoltaic Specialists Conference, 1988, 98: 538.

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H B Lu, X Y Li, W Zhang, D Y Zhou, L J Sun, K J Chen. Optimizing back surface field for improving Voc of(Al)GaInP solar cell[J]. J. Semicond., 2016, 37(10): 104004. doi: 10.1088/1674-4926/37/10/104004.

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Manuscript received: 27 December 2015 Manuscript revised: 17 March 2016 Online: Published: 01 October 2016

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