Fig. 1.
Energy diagram of metal-oxide-semiconductor structure when (a) positive and (b) negative voltages are applied on the metal gate.
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| Citation: |
Junjun Yuan, Zebo Fang, Yanyan Zhu, Bo Yao, Shiyan Liu, Gang He, Yongsheng Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. Journal of Semiconductors, 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006
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J J Yuan, Z B Fang, Y Y Zhu, B Yao, S Y Liu, G He, Y S Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. J. Semicond., 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006.
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Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors
DOI: 10.1088/1674-4926/37/3/034006
More Information
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Abstract
HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.-
Keywords:
- high-k film,
- leakage current,
- charge conduction
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References
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