J J Yuan, Z B Fang, Y Y Zhu, B Yao, S Y Liu, G He, Y S Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. J. Semicond., 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006.
Junjun Yuan 1, 2, , Zebo Fang 2, , , Yanyan Zhu 1, , , Bo Yao 2, , Shiyan Liu 2, , Gang He 3, and Yongsheng Tan 2,
Abstract: HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.
Key words: high-k film, leakage current, charge conduction
Abstract: HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.
Key words:
high-k film, leakage current, charge conduction
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[1] |
Zhou Jiahui, Chang Hudong, Liu Honggang. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application[J]. Journal of Semiconductors, 2015, 36(5): 054004. |
[2] |
Zhu Qiaozhi, Wang Dejun. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J]. Journal of Semiconductors, 2014, 35(2): 024002. |
[3] |
Li Zhichao, Liu Yuntao, Kuang Zhangqu. A capacitor-free high PSR CMOS low dropout voltage regulator[J]. Journal of Semiconductors, 2014, 35(6): 065004. |
[4] |
Lei Jianming, Chen Xiaomei. RuO2/MnO2 composite materials for high-performance supercapacitor electrodes[J]. Journal of Semiconductors, 2015, 36(8): 083006. |
[5] |
Zhang Hong, Zhang Jie, Zhang Mudan. A multifunctional switched-capacitor programmable gain amplifier for high-definition video analog front-ends[J]. Journal of Semiconductors, 2015, 36(3): 035002. |
[6] |
Ma Rui, Bai Wenbin, Zhu Zhangming. An energy-efficient and highly linear switching capacitor procedure for SAR ADCs[J]. Journal of Semiconductors, 2015, 36(5): 055014. |
[7] |
Park I S, Yong C J, Seong S. Metal-HfO2-Ge capacitor:its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer[J]. J Vac Sci Technol A, 2015, 33(1): 1A. |
[8] |
Liu Q, Fang Z, Liu S. Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering[J]. Mater Lett, 2014, 116(2): 43. |
[9] |
Mazet L, Yang S M, Kalinin S V. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications[J]. Sci Technol Adv Mater, 2015, 16: 036005. |
[10] |
Xiong Y H, Tu H L, Du J. Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film[J]. Appl Phys Lett, 2011, 98: 082906. |
[11] |
Sze S M, Ng K K. Physics of semiconductor devices[J]. 3rd ed. Hoboken:Wiley-Interscience, 2006: 227. |
[12] |
Ling Q D, Liaw D J, Zhu C. Polymer electronic memories:Materials, devices and mechanisms[J]. Prog Polym Sci, 2008, 33: 917. |
[13] |
Sze S M, Ng K K. Physics of semiconductor devices[J]. 3rd ed. Wiley-Interscience Hoboken, NJ, USA, 2006: 227. |
[14] |
Okada K. Analysis of the relationship between defect site generation and dielectric breakdown utilizing A-Mode stress induced leakage current[J]. IEEE Trans Electron Devices, 2000, 47(6): 1225. |
[15] |
Rosenbaum E, Rgister L F. Mechanism of stress-induced leakage current in MOS capacitors[J]. IEEE Trans Electron Devices, 1997, 44(2): 317. |
[16] |
Devi V L. Schottky barrier parameters and interfacial reactions of rapidly annealed Au/Cu bilayer metal scheme on n-type InP[J]. Open Applied Physics Journal, 2012, 5: 1. |
[17] |
Zhang J W, He G, Zhou L. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation[J]. Journal of Alloys & Compounds, 2014, 611(12): 253. |
[18] |
Klimakov A A. Modeling an electron gun with a focusing lens system with regard for space charge distribution[J]. St Petersburg State University, 2013: 150. |
[19] |
Bridgwood, Chad, Sosolik. Modeling of space-charge-limited current injection incorporating an advanced model of the Poole-Frenkel effect[J]. Dissertations & Theses-Gradworks, 2008. |
[20] |
Zhu S, Lo G Q, Kwong D L. Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO2/ITO/Cu stack for CMOS backend integration[J]. Optics Express, 2014, 22(15): 17930. |
[21] |
Tigau N, Condurache-Bota S. Effect of thermal annealing in vacuum on the structural and optical properties of Sb2S3 thin films[J]. 2014 International Semiconductor Conference(CAS), 2014: 73. |
[22] |
Knebel S, Schroeder U, Zhou D. Conduction mechanisms and breakdown characteristics of Al2O3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitors[J]. IEEE Trans Device Mater Res, 2014, 14: 154. |
[23] |
Zhu W J, Ma T P, Tamagawa T. Current transport in metal/hafnium oxide/silicon structure[J]. IEEE Electron Device Lett, 2002, 23(2): 97. |
[24] |
Afanas'ev V V, Badylevich M, Stesmans A. Band offsets between Si and epitaxial rare earth sesquioxides(RE2O3, RE=La, Nd, Gd, Lu):effect of 4f-shell occupancy[J]. Appl Phys Lett, 2008, 93: 192105. |
[25] |
Charmbers S A, Liang Y, Yu Z. Band offset and structure of SrTiO3/Si(001) hetero junctions[J]. J Vac Sci Technol A, 2001, 19: 934. |
[26] |
Roy C K, Noor-A-Alam M, Choudhuri A R. Synthesis and microstructure of Gd2O3-doped HfO2 ceramics[J]. Ceram Int, 2012, 38: 1801. |
[27] |
Liu J W, Liao M Y, Imura M. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric[J]. Sci Rep, 2014, 4: 6395. |
J J Yuan, Z B Fang, Y Y Zhu, B Yao, S Y Liu, G He, Y S Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. J. Semicond., 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006.
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Manuscript received: 04 November 2015 Manuscript revised: Online: Published: 01 March 2016
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