Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

Junjun Yuan; Zebo Fang; Yanyan Zhu; Bo Yao; Shiyan Liu; Gang He; Yongsheng Tan

doi:10.1088/1674-4926/37/3/034006

Abstract: HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.

Key words: high-k film, leakage current, charge conduction

References:

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[2]	Zhu Qiaozhi, Wang Dejun. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J]. Journal of Semiconductors, 2014, 35(2): 024002.
[3]	Li Zhichao, Liu Yuntao, Kuang Zhangqu. A capacitor-free high PSR CMOS low dropout voltage regulator[J]. Journal of Semiconductors, 2014, 35(6): 065004.
[4]	Lei Jianming, Chen Xiaomei. RuO₂/MnO₂ composite materials for high-performance supercapacitor electrodes[J]. Journal of Semiconductors, 2015, 36(8): 083006.
[5]	Zhang Hong, Zhang Jie, Zhang Mudan. A multifunctional switched-capacitor programmable gain amplifier for high-definition video analog front-ends[J]. Journal of Semiconductors, 2015, 36(3): 035002.
[6]	Ma Rui, Bai Wenbin, Zhu Zhangming. An energy-efficient and highly linear switching capacitor procedure for SAR ADCs[J]. Journal of Semiconductors, 2015, 36(5): 055014.
[7]	Park I S, Yong C J, Seong S. Metal-HfO₂-Ge capacitor:its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO₂ layer[J]. J Vac Sci Technol A, 2015, 33(1): 1A.
[8]	Liu Q, Fang Z, Liu S. Band offsets of La₂O₃ films on Ge substrates grown by radio frequency magnetron sputtering[J]. Mater Lett, 2014, 116(2): 43.
[9]	Mazet L, Yang S M, Kalinin S V. A review of molecular beam epitaxy of ferroelectric BaTiO₃ films on Si, Ge and GaAs substrates and their applications[J]. Sci Technol Adv Mater, 2015, 16: 036005.
[10]	Xiong Y H, Tu H L, Du J. Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO₂ high k film[J]. Appl Phys Lett, 2011, 98: 082906.
[11]	Sze S M, Ng K K. Physics of semiconductor devices[J]. 3rd ed. Hoboken:Wiley-Interscience, 2006: 227.
[12]	Ling Q D, Liaw D J, Zhu C. Polymer electronic memories:Materials, devices and mechanisms[J]. Prog Polym Sci, 2008, 33: 917.
[13]	Sze S M, Ng K K. Physics of semiconductor devices[J]. 3rd ed. Wiley-Interscience Hoboken, NJ, USA, 2006: 227.
[14]	Okada K. Analysis of the relationship between defect site generation and dielectric breakdown utilizing A-Mode stress induced leakage current[J]. IEEE Trans Electron Devices, 2000, 47(6): 1225.
[15]	Rosenbaum E, Rgister L F. Mechanism of stress-induced leakage current in MOS capacitors[J]. IEEE Trans Electron Devices, 1997, 44(2): 317.
[16]	Devi V L. Schottky barrier parameters and interfacial reactions of rapidly annealed Au/Cu bilayer metal scheme on n-type InP[J]. Open Applied Physics Journal, 2012, 5: 1.
[17]	Zhang J W, He G, Zhou L. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO₂ thin films by TiO₂ incorporation[J]. Journal of Alloys & Compounds, 2014, 611(12): 253.
[18]	Klimakov A A. Modeling an electron gun with a focusing lens system with regard for space charge distribution[J]. St Petersburg State University, 2013: 150.
[19]	Bridgwood, Chad, Sosolik. Modeling of space-charge-limited current injection incorporating an advanced model of the Poole-Frenkel effect[J]. Dissertations & Theses-Gradworks, 2008.
[20]	Zhu S, Lo G Q, Kwong D L. Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration[J]. Optics Express, 2014, 22(15): 17930.
[21]	Tigau N, Condurache-Bota S. Effect of thermal annealing in vacuum on the structural and optical properties of Sb₂S₃ thin films[J]. 2014 International Semiconductor Conference(CAS), 2014: 73.
[22]	Knebel S, Schroeder U, Zhou D. Conduction mechanisms and breakdown characteristics of Al₂O₃-doped ZrO₂ high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitors[J]. IEEE Trans Device Mater Res, 2014, 14: 154.
[23]	Zhu W J, Ma T P, Tamagawa T. Current transport in metal/hafnium oxide/silicon structure[J]. IEEE Electron Device Lett, 2002, 23(2): 97.
[24]	Afanas'ev V V, Badylevich M, Stesmans A. Band offsets between Si and epitaxial rare earth sesquioxides(RE₂O₃, RE=La, Nd, Gd, Lu):effect of 4f-shell occupancy[J]. Appl Phys Lett, 2008, 93: 192105.
[25]	Charmbers S A, Liang Y, Yu Z. Band offset and structure of SrTiO₃/Si(001) hetero junctions[J]. J Vac Sci Technol A, 2001, 19: 934.
[26]	Roy C K, Noor-A-Alam M, Choudhuri A R. Synthesis and microstructure of Gd₂O₃-doped HfO₂ ceramics[J]. Ceram Int, 2012, 38: 1801.
[27]	Liu J W, Liao M Y, Imura M. Low on-resistance diamond field effect transistor with high-k ZrO₂ as dielectric[J]. Sci Rep, 2014, 4: 6395.

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Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

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