J. Semicond. > 2016, Volume 37 > Issue 3 > 036002, doi: 10.1088/1674-4926/37/3/036002

SEMICONDUCTOR TECHNOLOGY

# Molecular dynamic simulation of non-melt laser annealing process

Corresponding author: Zhang Wei, Email:weizhang@tsinghua.edu.cn

Abstract: Molecular dynamic simulation is performed to study the process of material annealing caused by a 266 nm pulsed laser. A micro-mechanism describing behaviors of silicon and impurity atoms during the laser annealing at a non-melt regime is proposed. After ion implantation, the surface of the Si wafer is acted by a high energy laser pulse, which loosens the material and partially frees both Si and impurity atoms. While the residual laser energy is absorbed by valence electrons, these atoms are recoiled and relocated to finally form a crystal. Energy-related movement behavior is observed by using the molecular dynamic method. The non-melt laser anneal appears to be quite sensitive to the energy density of the laser, as a small excess energy may causes a significant impurity diffusion. Such a result is also supported by our laser anneal experiment.

 [1] [2] [3] [4] [5] [6] [7] [8] [9] [10]
Fig1.  Flow diagram for dealing with a laser annealing process.

Fig2.  Approximate pair correlation function of silicon atoms.

Fig3.  Travelling distance of six atoms with different potential energy settings,the laser energy keeps unchanged.

Fig4.  The kinetic energy of an atom versus time during the annealing process.

Fig5.  Travelling distance after 50 ns of six different atoms whose potential energies are set to $-3.3$ eV.

Fig6.  The influence of laser energy on travelling distances.

Fig7.  Influence of pulse length on traveling distance.

 [1] [2] [3] [4] [5] [6] [7] [8] [9] [10]

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Received: 01 July 2015 Revised: Online: Published: 01 March 2016

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Liren Yan, Dai Li, Wei Zhang, Zhihong Liu, Wei Zhou, Quan Wang. Molecular dynamic simulation of non-melt laser annealing process[J]. Journal of Semiconductors, 2016, 37(3): 036002. doi: 10.1088/1674-4926/37/3/036002 L R Yan, D Li, W Zhang, Z H Liu, W Zhou, Q Wang. Molecular dynamic simulation of non-melt laser annealing process[J]. J. Semicond., 2016, 37(3): 036002. doi: 10.1088/1674-4926/37/3/036002.Export: BibTex EndNote
 Citation: Liren Yan, Dai Li, Wei Zhang, Zhihong Liu, Wei Zhou, Quan Wang. Molecular dynamic simulation of non-melt laser annealing process[J]. Journal of Semiconductors, 2016, 37(3): 036002. L R Yan, D Li, W Zhang, Z H Liu, W Zhou, Q Wang. Molecular dynamic simulation of non-melt laser annealing process[J]. J. Semicond., 2016, 37(3): 036002. doi: 10.1088/1674-4926/37/3/036002. Export: BibTex EndNote

# Molecular dynamic simulation of non-melt laser annealing process

##### doi: 10.1088/1674-4926/37/3/036002
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• Corresponding author: Zhang Wei, Email:weizhang@tsinghua.edu.cn