J. Semicond. > Volume 39 > Issue 2 > Article Number: 026001

Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

Lily Liu 1, 2, 3, 4, , , Changbin Song 1, 2, 3, 4, , Bin Xue 1, 2, 3, 4, , Jing Li 1, 2, 3, 4, , Junxi Wang 1, 2, 3, 4, and Jinmin Li 1, 2, 3, 4,

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Abstract: Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

Key words: thin filmmicrocircuitphotosensitive polyimidesilicon dioxideimidizationtemperature

Abstract: Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

Key words: thin filmmicrocircuitphotosensitive polyimidesilicon dioxideimidizationtemperature



References:

[1]

Wang J, Yan X J, Xu Y X, et al. Organic thin-film transistors having inorganic/organic double gate insulators. Appl Phys Lett, 2004, 85(22): 5424

[2]

Veres J, Ogier S D, Leeming S W, et al. Low-k insulators as the choice of of dielectrics in organic field effect transistors. Adv Funct Mater, 2003, 13(3): 199

[3]

Chen L, Zhu W Q, Bai Y, et al. Effects of surface-modified gate dielectrics oil electrical characteristics of organic thin-film transistors. Chin J Semicond, 2007, 28(10): 1590

[4]

Yang W K, Liu F F, Zhang E S, et al. Influence of atmosphere and force during thermal imidizaton on the structure and properties of BPDA-PDA polymide fibers. Chem J Chin Univ, 2017, 38(1): 150

[5]

Qiu J L, Huo J C, Lei Y L, et al. Exploration of one copolymerization polyimide film forming process. New Chem Mater, 2017, 45(1): 88

[6]

Liang H Y, Ju W, Wu W D, et al. Effect of soaking on etching of polymide heavy-ion microfiltration membranes. Nucl Tech, 2017, 40(1): 010501

[7]

Chung C M, Cho S Y, Kim M S, et al. Photosensitive polyimides having N-sulfonyloxyimide and N-carbonyloxyimide groups in the main chain. Opt Mater, 2002, 21: 421

[8]

Oh S K, Jang T, Pouladi S, et al. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Appl Phys Express, 2017, 10(1): 016502

[9]

Zheng F, Lu Q H. A computational probe into the dissolution Inhibitation effect of diazonaphthoquinone photoactive compounds on positive tone photosensitive polyimides. J Phys Chem C, 2017, 121(3): 1704

[10]

Dick A R, Bell W K, Luke B, et al. High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 033503

[11]

Oh S K, Jang T, Jo Y J, et al. Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers. Surf Coat Technol, 2016, 307: 1124

[12]

Meng L H, Kang X N, Wang P, et al. Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure. Superlattices Microstruct, 2016, 91: 313

[13]

Akin M, Rezem M, Rahlves M, et al. Direct hot embossing of microelements by means of photostructurable polyimide. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 034506

[14]

Windrich F, Kappert E J, Malanin M, et al. In-situ imidization analysis in microscale thin films of an ester-type photosensitive polyimide for microelectronic packaging applications. Eur Polymer J, 2016, 84: 279

[15]

Chen Z G, Zhao J Q, Yan S J, et al. Dielectric properties of photocrosslinkable polyimide/functional graphene oxide composites. Mater Lett, 2015, 157: 201

[16]

Im J H, Chae B, Lee S H, et al. photosensitive polyimides with rigid side chain and their thermal stable liquid-crystal alignment properties. Molecul Cryst Liquid Cryst, 2014, 601(1): 20

[1]

Wang J, Yan X J, Xu Y X, et al. Organic thin-film transistors having inorganic/organic double gate insulators. Appl Phys Lett, 2004, 85(22): 5424

[2]

Veres J, Ogier S D, Leeming S W, et al. Low-k insulators as the choice of of dielectrics in organic field effect transistors. Adv Funct Mater, 2003, 13(3): 199

[3]

Chen L, Zhu W Q, Bai Y, et al. Effects of surface-modified gate dielectrics oil electrical characteristics of organic thin-film transistors. Chin J Semicond, 2007, 28(10): 1590

[4]

Yang W K, Liu F F, Zhang E S, et al. Influence of atmosphere and force during thermal imidizaton on the structure and properties of BPDA-PDA polymide fibers. Chem J Chin Univ, 2017, 38(1): 150

[5]

Qiu J L, Huo J C, Lei Y L, et al. Exploration of one copolymerization polyimide film forming process. New Chem Mater, 2017, 45(1): 88

[6]

Liang H Y, Ju W, Wu W D, et al. Effect of soaking on etching of polymide heavy-ion microfiltration membranes. Nucl Tech, 2017, 40(1): 010501

[7]

Chung C M, Cho S Y, Kim M S, et al. Photosensitive polyimides having N-sulfonyloxyimide and N-carbonyloxyimide groups in the main chain. Opt Mater, 2002, 21: 421

[8]

Oh S K, Jang T, Pouladi S, et al. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Appl Phys Express, 2017, 10(1): 016502

[9]

Zheng F, Lu Q H. A computational probe into the dissolution Inhibitation effect of diazonaphthoquinone photoactive compounds on positive tone photosensitive polyimides. J Phys Chem C, 2017, 121(3): 1704

[10]

Dick A R, Bell W K, Luke B, et al. High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 033503

[11]

Oh S K, Jang T, Jo Y J, et al. Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers. Surf Coat Technol, 2016, 307: 1124

[12]

Meng L H, Kang X N, Wang P, et al. Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure. Superlattices Microstruct, 2016, 91: 313

[13]

Akin M, Rezem M, Rahlves M, et al. Direct hot embossing of microelements by means of photostructurable polyimide. J Micro/Nanolithograph, MEMS, MOEMS, 2016, 15(3): 034506

[14]

Windrich F, Kappert E J, Malanin M, et al. In-situ imidization analysis in microscale thin films of an ester-type photosensitive polyimide for microelectronic packaging applications. Eur Polymer J, 2016, 84: 279

[15]

Chen Z G, Zhao J Q, Yan S J, et al. Dielectric properties of photocrosslinkable polyimide/functional graphene oxide composites. Mater Lett, 2015, 157: 201

[16]

Im J H, Chae B, Lee S H, et al. photosensitive polyimides with rigid side chain and their thermal stable liquid-crystal alignment properties. Molecul Cryst Liquid Cryst, 2014, 601(1): 20

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L Liu, C B Song, B Xue, J Li, J X Wang, J M Li. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit[J]. J. Semicond., 2018, 39(2): 026001. doi: 10.1088/1674-4926/39/2/026001.

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History

Manuscript received: 02 March 2017 Manuscript revised: 12 July 2017 Online: Uncorrected proof: 24 January 2018 Accepted Manuscript: 02 February 2018 Published: 02 February 2018

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