J. Semicond. > Volume 39 > Issue 8 > Article Number: 083001

Band structure of monolayer of graphene, silicene and silicon-carbide including a lattice of empty or filled holes

N. Nouri and G. Rashedi ,

+ Author Affilications + Find other works by these authors

PDF

Turn off MathJax

Abstract: We have developed a $\pi$ -orbital tight-binding Hamiltonian model taking into account the nearest neighbors to study the effect of antidot lattices (two dimensional honeycomb lattice of atoms including holes) on the band structure of silicene and silicon carbide (SiC) sheets. We obtained that the band structure of the silicene antidot superlattice strongly depends on the size of embedded holes, and the band gap of the silicene antidot lattice increases by increasing of holes diameter. The band gap of SiC antidot lattice, except for the lattice of the small unit cell, is independent of the holes diameter and also depends on the distance between holes. We obtained that, the band gap of the SiC antidot lattice is the same as the band gap of the corresponding sheet without hole. Also, the electronic properties of the SiC antidot superlattice occupied either by carbon or by silicon atoms are investigated, numerically. Furthermore, we study the effect of occupation of graphene antidot by Si atoms and vice versa. Also, we have calculated the band structure of graphene and silicene antidot lattice filled by Si + C atoms. Finally, we compute the band structure of the SiC antidot lattice including the holes which are filled by C or by Si atoms. Really, in this paper we have generalized the method of paper[38] about graphene antidot with empty holes to the cases of filled holes by different atoms and also to the case of silicene and silicon carbide antidot lattices.

Key words: tight bindingband structureantidotgraphenesiliceneSiC

Abstract: We have developed a $\pi$ -orbital tight-binding Hamiltonian model taking into account the nearest neighbors to study the effect of antidot lattices (two dimensional honeycomb lattice of atoms including holes) on the band structure of silicene and silicon carbide (SiC) sheets. We obtained that the band structure of the silicene antidot superlattice strongly depends on the size of embedded holes, and the band gap of the silicene antidot lattice increases by increasing of holes diameter. The band gap of SiC antidot lattice, except for the lattice of the small unit cell, is independent of the holes diameter and also depends on the distance between holes. We obtained that, the band gap of the SiC antidot lattice is the same as the band gap of the corresponding sheet without hole. Also, the electronic properties of the SiC antidot superlattice occupied either by carbon or by silicon atoms are investigated, numerically. Furthermore, we study the effect of occupation of graphene antidot by Si atoms and vice versa. Also, we have calculated the band structure of graphene and silicene antidot lattice filled by Si + C atoms. Finally, we compute the band structure of the SiC antidot lattice including the holes which are filled by C or by Si atoms. Really, in this paper we have generalized the method of paper[38] about graphene antidot with empty holes to the cases of filled holes by different atoms and also to the case of silicene and silicon carbide antidot lattices.

Key words: tight bindingband structureantidotgraphenesiliceneSiC



References:

[1]

Bharech S, Kumar R. A review on the properties and applications of graphene. J Mater Sci Mechan Eng, 2015, 2(10): 70

[2]

Allen M J, Tung V C, Kaner R B. Honeycomb carbon: a review of graphene. Chem Rev, 2009, 110(1): 132

[3]

Choi W, Lee J W. Graphene: synthesis and applications. CRC Press, 2011

[4]

Chabot V, Higgins D, Yu A, et al. A review of graphene and graphene oxide sponge: material synthesis and applications to energy and the environment. Energy Environm Sci, 2014, 7(5): 1564

[5]

Brunner K. Si/Ge nanostructures. Rep Prog Phys, 2001, 65(1): 27

[6]

Kara A, Enriquez H, Seitsonen A P, et al. A review on silicene—new candidate for electronics. Surf Sci Rep, 2012, 67(1): 1

[7]

Chiew Y L, Cheong K Y. A review on the synthesis of SiC from plant-based biomasses. Mater Sci Eng B, 2011, 176(13): 951

[8]

Pecholt B, Gupta S, Molian P. Review of laser microscale processing of silicon carbide. J Laser Appl, 2011, 23(1): 012008

[9]

Casady J, Johnson R. Status of silicon carbide (SiC) as a wide-band gap semiconductor for high-temperature applications: a review. Solid-State Electron, 1996, 39(10): 1409

[10]

Bekaroglu E, Topsakal M, Cahangirov S, et al. First-principles study of defects and adatoms in silicon carbide honeycomb structures. Phys Rev B, 2010, 81(7): 075433

[11]

Ye X S, Shao Z G, Zhao H, et al. Electronic and optical properties of silicene nanomeshes. RSC Adv, 2014, 4(72): 37998

[12]

Wright N G, Horsfall A B. SiC sensors: a review. J Phys D, 2007, 40(20): 6345

[13]

Shao Z G, Ye X S, Yang L, et al. First-principles calculation of intrinsic carrier mobility of silicene. J Appl Phys, 2013, 114(9): 093712

[14]

Guzmán-Verri G G, Voon L L. Electronic structure of silicon-based nanostructures. Phys Rev B, 2007, 76(7): 075131

[15]

Zheng F B, Zhang C W, Wang P J, et al. Novel half-metal and spin gapless semiconductor properties in N-doped silicene nanoribbons. J Appl Phys, 2013, 113(15): 154302

[16]

Liu C C, Feng W, Yao Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys Rev Lett, 2011, 107(7): 076802

[17]

Martinazzo R, Casolo S, Tantardini G F. Symmetry-induced band-gap opening in graphene superlattices. Phys Rev B, 2010, 81(24): 245420

[18]

Trolle M L, Møller U S, Pedersen T G. Large and stable band gaps in spin-polarized graphene antidot lattices. Phys Rev B, 2013, 88(19): 195418

[19]

Zhou W, Yan L, Wang Y, et al. SiC nanowires: a photocatalytic nanomaterial. Appl Phys Lett, 2006, 89(1): 013105

[20]

Hu J Q, Bando Y, Zhan J H, et al. Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes). Appl Phys Lett, 2004, 85(14): 2932

[21]

De Padova P, Quaresima C, Ottaviani C, et al. Evidence of graphene-like electronic signature in silicene nanoribbons. Appl Phys Lett, 2010, 96(26): 261905

[22]

Kim J, Kim Y H, Choi S H, et al. Curved silicon nanowires with ribbon-like cross sections by metal-assisted chemical etching. Acs Nano, 2011, 5(6): 5242

[23]

Sun L, Li Y, Li Z, et al. Electronic structures of SiC nanoribbons. J Chem Phys, 2008, 129(17): 174114

[24]

Baumeier B, Krüger P, Pollmann J. Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes. Phys Rev B, 2007, 76(8): 085407

[25]

Menon M, Richter E, Mavrandonakis A, et al. Structure and stability of SiC nanotubes. Phys Rev B, 2004, 69(11): 115322

[26]

Kara A, Vizzini S, Leandri C, et al. Silicon nano-ribbons on Ag (110): a computational investigation. J Phys: Condensed Matter, 2010, 22(4): 045004

[27]

Ding Y, Ni J. Electronic structures of silicon nanoribbons. Appl Phys Lett, 2009, 95(8): 083115

[28]

Cahangirov S, Topsakal M, Aktürk E, et al. Two-and one-dimensional honeycomb structures of silicon and germanium. Phys Rev Lett, 2009, 102(23): 236804

[29]

Lehmann T, Ryndyk D A, Cuniberti G. Combined effect of strain and defects on the conductance of graphene nanoribbons. Phys Rev B, 2013, 88(12): 125420

[30]

Sahin H, Ataca C, Ciraci S. Electronic and magnetic properties of graphane nanoribbons. Phys Rev B, 2010, 81(20): 205417

[31]

Lu Y H, Feng Y P. Band-gap engineering with hybrid graphane–graphene nanoribbons. J Phys Chem C, 2009, 113(49): 20841

[32]

Huang H, Wei D, Sun J, et al. Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons. Sci Rep, 2012, 2: 983

[33]

Le Lay G, Aufray B, Léandri C, et al. Physics and chemistry of silicene nano-ribbons. Appl Surf Sci, 2009, 256(2): 524

[34]

Balog R, Jørgensen B, Nilsson L, et al. Bandgap opening in graphene induced by patterned hydrogen adsorption. Nat Mater, 2010, 9(4): 315

[35]

Zhang Y, Qin H, Cao E, et al. Ferromagnetism induced by intrinsic defects and boron substitution in single-wall SiC nanotubes. J Phys Chem A, 2011, 115(35): 9987

[36]

Guzmán-Verri G G, Voon L L. Band structure of hydrogenated Si nanosheets and nanotubes. J Phys: Conden Matter, 2011, 23(14): 145502

[37]

Tachikawa H, Iyama T. Structures and electronic states of fluorinated graphene. Solid State Sci, 2014, 28: 41

[38]

Pedersen T G, Flindt C, Pedersen J, et al. Graphene antidot lattices: designed defects and spin qubits. Phys Rev Lett, 2008, 100(13): 136804

[39]

Ouyang F, Peng S, Yang Z, et al. Bandgap opening/closing of graphene antidot lattices with zigzag-edged hexagonal holes. Phys Chem Chem Phys, 2014, 16(38): 20524

[40]

Oswald W, Wu Z. Energy gaps in graphene nanomeshes. Phys Rev B, 2012, 85(11): 115431

[41]

Petersen R, Pedersen T G, Jauho A P. Clar sextets in square graphene antidot lattices. Physica E, 2012, 44(6): 967

[42]

Zhang A, Teoh H F, Dai Z, et al. Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study. Appl Phys Lett, 2011, 98(2): 023105

[43]

Petersen R, Pedersen T G, Jauho A P. Clar sextet analysis of triangular, rectangular, and honeycomb graphene antidot lattices. Acs Nano, 2010, 5(1): 523

[44]

Sahin H, Ciraci S. Structural, mechanical, and electronic properties of defect-patterned graphene nanomeshes from first principles. Phys Rev B, 2011, 84(3): 035452

[45]

Ouyang F, Peng S, Liu Z, et al. Bandgap opening in graphene antidot lattices: the missing half. ACS Nano, 2011, 5(5): 4023

[46]

Ouyang F, Yang Z, Xiao J, et al. Electronic structure and chemical modification of graphene antidot lattices. J Phys Chem C, 2010, 114(37): 15578

[47]

Petersen R, Pedersen T G. Quasiparticle properties of graphene antidot lattices. Phys Rev B, 2009, 80(11): 113404

[48]

Liu W, Wang Z F, Shi Q W, et al. Band-gap scaling of graphene nanohole superlattices. Phys Rev B, 2009, 80(23): 233405

[49]

Fürst J A, Pedersen T G, Brandbyge M, et al. Density functional study of graphene antidot lattices: Roles of geometrical relaxation and spin. Phys Rev B, 2009, 80(11): 115117

[50]

Yu D, Lupton E M, Liu M, et al. Collective magnetic behavior of graphene nanohole superlattices. Nano Res, 2008, 1(1): 56

[51]

Bai J, Zhong X, Jiang S, et al. Graphene nanomesh. Nat Nanotechnol, 2010, 5(3): 190

[52]

Kim M, Safron N S, Han E, at al. Fabrication and characterization of large-area, semiconducting nanoperforated graphene materials. Nano Lett, 2010, 10(4): 1125

[53]

Liang X, Jung Y S, Wu S, et al. Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography. Nano Lett, 2010, 10(7): 2454

[54]

Heydrich S, Hirmer M, Preis C, et al. Scanning Raman spectroscopy of graphene antidot lattices: evidence for systematic p-type doping. Appl Phys Lett, 2010, 97(4): 043113

[55]

Shen T, Wu Y Q, Capano M A, et al. Magnetoconductance oscillations in graphene antidot arrays. Appl Phys Lett, 2008, 93(12): 122102

[56]

Sinitskii A, Tour J M. Patterning graphene through the self-assembled templates: toward periodic two-dimensional graphene nanostructures with semiconductor properties. J Am Chem Soc, 2010, 132(42): 14730

[57]

Freeman C L, Claeyssens F, Allan N L, et al. Graphitic nanofilms as precursors to wurtzite films: theory. Phys Rev Lett, 2006, 96(6): 066102

[58]

Chiappe D, Grazianetti C, Tallarida G, et al. Local electronic properties of corrugated silicene phases. Adv Mater, 2012, 25; 24(37): 5088

[59]

Sahin H, Cahangirov S, Topsakal M, et al. Monolayer honeycomb structures of group-IV elements and III–V binary compounds: first-principles calculations. Phys Rev B, 2009, 80(15): 155453

[60]

Pan F, Wang Y, Jiang K, et al. Silicene nanomesh. Sci Rep, 2015, 5

[61]

Zhao K, Zhao M, Wang Z, et al. Tight-binding model for the electronic structures of SiC and BN nanoribbons. Physica E, 2010, 43(1): 440

[62]

Saito R, Dresselhaus G, Dresselhaus M S. Physical properties of carbon nanotubes. World Scientific, 1998

[63]

Slater J C, Koster G F. Simplified LCAO method for the periodic potential problem. Phys Rev, 1954, 94(6): 1498

[64]

Jung J, MacDonald A H. Carrier density and magnetism in graphene zigzag nanoribbons. Phys Rev B, 2009, 79(23): 235433

[65]

Hannewald K, Stojanović V M, Schellekens J M, et al. Theory of polaron bandwidth narrowing in organic molecular crystals. Phys Rev B, 2004, 69(7): 075211

[66]

Novoselov K S, Geim A K, Morozov S, et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 2005, 438(7065): 197

[67]

Berger C, Song Z, Li X, et al. Electronic confinement and coherence in patterned epitaxial graphene. Science, 2006, 312(5777): 1191

[68]

Han M Y, Özyilmaz B, Zhang Y, et al. Energy band-gap engineering of graphene nanoribbons. Phys Rev Lett, 2007, 98(20): 206805

[69]

Geim A K, Novoselov K S. The rise of graphene. Nat Mater, 2007, 6(3): 183

[1]

Bharech S, Kumar R. A review on the properties and applications of graphene. J Mater Sci Mechan Eng, 2015, 2(10): 70

[2]

Allen M J, Tung V C, Kaner R B. Honeycomb carbon: a review of graphene. Chem Rev, 2009, 110(1): 132

[3]

Choi W, Lee J W. Graphene: synthesis and applications. CRC Press, 2011

[4]

Chabot V, Higgins D, Yu A, et al. A review of graphene and graphene oxide sponge: material synthesis and applications to energy and the environment. Energy Environm Sci, 2014, 7(5): 1564

[5]

Brunner K. Si/Ge nanostructures. Rep Prog Phys, 2001, 65(1): 27

[6]

Kara A, Enriquez H, Seitsonen A P, et al. A review on silicene—new candidate for electronics. Surf Sci Rep, 2012, 67(1): 1

[7]

Chiew Y L, Cheong K Y. A review on the synthesis of SiC from plant-based biomasses. Mater Sci Eng B, 2011, 176(13): 951

[8]

Pecholt B, Gupta S, Molian P. Review of laser microscale processing of silicon carbide. J Laser Appl, 2011, 23(1): 012008

[9]

Casady J, Johnson R. Status of silicon carbide (SiC) as a wide-band gap semiconductor for high-temperature applications: a review. Solid-State Electron, 1996, 39(10): 1409

[10]

Bekaroglu E, Topsakal M, Cahangirov S, et al. First-principles study of defects and adatoms in silicon carbide honeycomb structures. Phys Rev B, 2010, 81(7): 075433

[11]

Ye X S, Shao Z G, Zhao H, et al. Electronic and optical properties of silicene nanomeshes. RSC Adv, 2014, 4(72): 37998

[12]

Wright N G, Horsfall A B. SiC sensors: a review. J Phys D, 2007, 40(20): 6345

[13]

Shao Z G, Ye X S, Yang L, et al. First-principles calculation of intrinsic carrier mobility of silicene. J Appl Phys, 2013, 114(9): 093712

[14]

Guzmán-Verri G G, Voon L L. Electronic structure of silicon-based nanostructures. Phys Rev B, 2007, 76(7): 075131

[15]

Zheng F B, Zhang C W, Wang P J, et al. Novel half-metal and spin gapless semiconductor properties in N-doped silicene nanoribbons. J Appl Phys, 2013, 113(15): 154302

[16]

Liu C C, Feng W, Yao Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys Rev Lett, 2011, 107(7): 076802

[17]

Martinazzo R, Casolo S, Tantardini G F. Symmetry-induced band-gap opening in graphene superlattices. Phys Rev B, 2010, 81(24): 245420

[18]

Trolle M L, Møller U S, Pedersen T G. Large and stable band gaps in spin-polarized graphene antidot lattices. Phys Rev B, 2013, 88(19): 195418

[19]

Zhou W, Yan L, Wang Y, et al. SiC nanowires: a photocatalytic nanomaterial. Appl Phys Lett, 2006, 89(1): 013105

[20]

Hu J Q, Bando Y, Zhan J H, et al. Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes). Appl Phys Lett, 2004, 85(14): 2932

[21]

De Padova P, Quaresima C, Ottaviani C, et al. Evidence of graphene-like electronic signature in silicene nanoribbons. Appl Phys Lett, 2010, 96(26): 261905

[22]

Kim J, Kim Y H, Choi S H, et al. Curved silicon nanowires with ribbon-like cross sections by metal-assisted chemical etching. Acs Nano, 2011, 5(6): 5242

[23]

Sun L, Li Y, Li Z, et al. Electronic structures of SiC nanoribbons. J Chem Phys, 2008, 129(17): 174114

[24]

Baumeier B, Krüger P, Pollmann J. Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes. Phys Rev B, 2007, 76(8): 085407

[25]

Menon M, Richter E, Mavrandonakis A, et al. Structure and stability of SiC nanotubes. Phys Rev B, 2004, 69(11): 115322

[26]

Kara A, Vizzini S, Leandri C, et al. Silicon nano-ribbons on Ag (110): a computational investigation. J Phys: Condensed Matter, 2010, 22(4): 045004

[27]

Ding Y, Ni J. Electronic structures of silicon nanoribbons. Appl Phys Lett, 2009, 95(8): 083115

[28]

Cahangirov S, Topsakal M, Aktürk E, et al. Two-and one-dimensional honeycomb structures of silicon and germanium. Phys Rev Lett, 2009, 102(23): 236804

[29]

Lehmann T, Ryndyk D A, Cuniberti G. Combined effect of strain and defects on the conductance of graphene nanoribbons. Phys Rev B, 2013, 88(12): 125420

[30]

Sahin H, Ataca C, Ciraci S. Electronic and magnetic properties of graphane nanoribbons. Phys Rev B, 2010, 81(20): 205417

[31]

Lu Y H, Feng Y P. Band-gap engineering with hybrid graphane–graphene nanoribbons. J Phys Chem C, 2009, 113(49): 20841

[32]

Huang H, Wei D, Sun J, et al. Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons. Sci Rep, 2012, 2: 983

[33]

Le Lay G, Aufray B, Léandri C, et al. Physics and chemistry of silicene nano-ribbons. Appl Surf Sci, 2009, 256(2): 524

[34]

Balog R, Jørgensen B, Nilsson L, et al. Bandgap opening in graphene induced by patterned hydrogen adsorption. Nat Mater, 2010, 9(4): 315

[35]

Zhang Y, Qin H, Cao E, et al. Ferromagnetism induced by intrinsic defects and boron substitution in single-wall SiC nanotubes. J Phys Chem A, 2011, 115(35): 9987

[36]

Guzmán-Verri G G, Voon L L. Band structure of hydrogenated Si nanosheets and nanotubes. J Phys: Conden Matter, 2011, 23(14): 145502

[37]

Tachikawa H, Iyama T. Structures and electronic states of fluorinated graphene. Solid State Sci, 2014, 28: 41

[38]

Pedersen T G, Flindt C, Pedersen J, et al. Graphene antidot lattices: designed defects and spin qubits. Phys Rev Lett, 2008, 100(13): 136804

[39]

Ouyang F, Peng S, Yang Z, et al. Bandgap opening/closing of graphene antidot lattices with zigzag-edged hexagonal holes. Phys Chem Chem Phys, 2014, 16(38): 20524

[40]

Oswald W, Wu Z. Energy gaps in graphene nanomeshes. Phys Rev B, 2012, 85(11): 115431

[41]

Petersen R, Pedersen T G, Jauho A P. Clar sextets in square graphene antidot lattices. Physica E, 2012, 44(6): 967

[42]

Zhang A, Teoh H F, Dai Z, et al. Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study. Appl Phys Lett, 2011, 98(2): 023105

[43]

Petersen R, Pedersen T G, Jauho A P. Clar sextet analysis of triangular, rectangular, and honeycomb graphene antidot lattices. Acs Nano, 2010, 5(1): 523

[44]

Sahin H, Ciraci S. Structural, mechanical, and electronic properties of defect-patterned graphene nanomeshes from first principles. Phys Rev B, 2011, 84(3): 035452

[45]

Ouyang F, Peng S, Liu Z, et al. Bandgap opening in graphene antidot lattices: the missing half. ACS Nano, 2011, 5(5): 4023

[46]

Ouyang F, Yang Z, Xiao J, et al. Electronic structure and chemical modification of graphene antidot lattices. J Phys Chem C, 2010, 114(37): 15578

[47]

Petersen R, Pedersen T G. Quasiparticle properties of graphene antidot lattices. Phys Rev B, 2009, 80(11): 113404

[48]

Liu W, Wang Z F, Shi Q W, et al. Band-gap scaling of graphene nanohole superlattices. Phys Rev B, 2009, 80(23): 233405

[49]

Fürst J A, Pedersen T G, Brandbyge M, et al. Density functional study of graphene antidot lattices: Roles of geometrical relaxation and spin. Phys Rev B, 2009, 80(11): 115117

[50]

Yu D, Lupton E M, Liu M, et al. Collective magnetic behavior of graphene nanohole superlattices. Nano Res, 2008, 1(1): 56

[51]

Bai J, Zhong X, Jiang S, et al. Graphene nanomesh. Nat Nanotechnol, 2010, 5(3): 190

[52]

Kim M, Safron N S, Han E, at al. Fabrication and characterization of large-area, semiconducting nanoperforated graphene materials. Nano Lett, 2010, 10(4): 1125

[53]

Liang X, Jung Y S, Wu S, et al. Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography. Nano Lett, 2010, 10(7): 2454

[54]

Heydrich S, Hirmer M, Preis C, et al. Scanning Raman spectroscopy of graphene antidot lattices: evidence for systematic p-type doping. Appl Phys Lett, 2010, 97(4): 043113

[55]

Shen T, Wu Y Q, Capano M A, et al. Magnetoconductance oscillations in graphene antidot arrays. Appl Phys Lett, 2008, 93(12): 122102

[56]

Sinitskii A, Tour J M. Patterning graphene through the self-assembled templates: toward periodic two-dimensional graphene nanostructures with semiconductor properties. J Am Chem Soc, 2010, 132(42): 14730

[57]

Freeman C L, Claeyssens F, Allan N L, et al. Graphitic nanofilms as precursors to wurtzite films: theory. Phys Rev Lett, 2006, 96(6): 066102

[58]

Chiappe D, Grazianetti C, Tallarida G, et al. Local electronic properties of corrugated silicene phases. Adv Mater, 2012, 25; 24(37): 5088

[59]

Sahin H, Cahangirov S, Topsakal M, et al. Monolayer honeycomb structures of group-IV elements and III–V binary compounds: first-principles calculations. Phys Rev B, 2009, 80(15): 155453

[60]

Pan F, Wang Y, Jiang K, et al. Silicene nanomesh. Sci Rep, 2015, 5

[61]

Zhao K, Zhao M, Wang Z, et al. Tight-binding model for the electronic structures of SiC and BN nanoribbons. Physica E, 2010, 43(1): 440

[62]

Saito R, Dresselhaus G, Dresselhaus M S. Physical properties of carbon nanotubes. World Scientific, 1998

[63]

Slater J C, Koster G F. Simplified LCAO method for the periodic potential problem. Phys Rev, 1954, 94(6): 1498

[64]

Jung J, MacDonald A H. Carrier density and magnetism in graphene zigzag nanoribbons. Phys Rev B, 2009, 79(23): 235433

[65]

Hannewald K, Stojanović V M, Schellekens J M, et al. Theory of polaron bandwidth narrowing in organic molecular crystals. Phys Rev B, 2004, 69(7): 075211

[66]

Novoselov K S, Geim A K, Morozov S, et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 2005, 438(7065): 197

[67]

Berger C, Song Z, Li X, et al. Electronic confinement and coherence in patterned epitaxial graphene. Science, 2006, 312(5777): 1191

[68]

Han M Y, Özyilmaz B, Zhang Y, et al. Energy band-gap engineering of graphene nanoribbons. Phys Rev Lett, 2007, 98(20): 206805

[69]

Geim A K, Novoselov K S. The rise of graphene. Nat Mater, 2007, 6(3): 183

[1]

Liang Zhijun, Wang Zhibin, Wang Li, Zhao Fuli, Yang Shenghong, He Zhenhui, Chen Dihu. Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film. J. Semicond., 2006, 27(S1): 72.

[2]

Naili Yue, Joshua Myers, Liqin Su, Wentao Wang, Fude Liu, Raphael Tsu, Yan Zhuang, Yong Zhang. Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene. J. Semicond., 2019, 40(6): 062001. doi: 10.1088/1674-4926/40/6/062001

[3]

Chen Zhiming, Ren Ping, Pu Hongbin. Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure. J. Semicond., 2006, 27(2): 254.

[4]

Gao Jinxia, Zhang Yimen, Zhang Yuming. C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC. J. Semicond., 2006, 27(7): 1259.

[5]

Jiang Shouzhen, Xu Xian'gang, Li Juan, Chen Xiufang, Wang Yingmin, Ning Li'na, Hu Xiaobo, Wang Jiyang, Jiang Minhua. Recent Progress in SiC Monocrystal Growth and Wafer Machining. J. Semicond., 2007, 28(5): 810.

[6]

Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Guo Hui, Zhang Lin. Direct Tunneling Effect in SiC Schottky Contacts. J. Semicond., 2006, 27(1): 174.

[7]

Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan. Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction. J. Semicond., 2006, 27(S1): 378.

[8]

Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs. J. Semicond., 2008, 29(2): 334.

[9]

Pu Hongbin, Chen Zhiming. Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT. J. Semicond., 2005, 26(S1): 143.

[10]

Yang Ying, Lin Tao, Chen Zhiming. Effect of Growth Gas Flow Rate on the Defects Density of SiC Single Crystal. J. Semicond., 2008, 29(5): 851.

[11]

Chen Gang. n-Type 4H-SiC Ohmic Contact. J. Semicond., 2005, 26(S1): 273.

[12]

Cai Shujun, Pan Hongshu, Chen Hao, Li Liang, Zhao Zhenping. S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate. J. Semicond., 2006, 27(2): 266.

[13]

Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, Chen Chunlan, Li Qingmin. Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate. J. Semicond., 2007, 28(S1): 123.

[14]

Jia Renxu, Zhang Yimen, Zhang Yuming, Guo Hui. Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes. J. Semicond., 2007, 28(S1): 541.

[15]

Wang Lei, Sun Guosheng, Gao Xin, Zhao Wanshun, Zhang Yongxing, Zeng Yiping, Li Jinmin. LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-SiC(0001) Substrates. J. Semicond., 2005, 26(S1): 113.

[16]

Jie Chen, Weiyou Zeng. Coupling effect of quantum wells on band structure. J. Semicond., 2015, 36(10): 102005. doi: 10.1088/1674-4926/36/10/102005

[17]

You Siyu, Wang Yan. Band Structures of Si Nanowires with Different Surface Terminations. J. Semicond., 2006, 27(11): 1927.

[18]

Yanlong Yin, Jiang Li, Yang Xu, Hon Ki Tsang, Daoxin Dai. Silicon-graphene photonic devices. J. Semicond., 2018, 39(6): 061009. doi: 10.1088/1674-4926/39/6/061009

[19]

Wang Qi, Wang Ronghua, Xia Dongmei, Zheng Youdou, Han Ping, Yu Huiqiang, Mei Qin, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong. Effect of the Thickness of the Strained Si on Hall Mobility. J. Semicond., 2007, 28(S1): 130.

[20]

Huang Limin, Xie Jiachun, Liang Jin. High Quality Ultraviolet Photodetectors Based on Silicon Carbide. J. Semicond., 2005, 26(S1): 256.

Search

Advanced Search >>

GET CITATION

N. Nouri, G. Rashedi, Band structure of monolayer of graphene, silicene and silicon-carbide including a lattice of empty or filled holes[J]. J. Semicond., 2018, 39(8): 083001. doi: 10.1088/1674-4926/39/8/083001.

Export: BibTex EndNote

Article Metrics

Article views: 1443 Times PDF downloads: 112 Times Cited by: 0 Times

History

Manuscript received: 22 August 2017 Manuscript revised: 18 February 2018 Online: Accepted Manuscript: 26 April 2018 Uncorrected proof: 05 July 2018 Published: 09 August 2018

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误