S N Zhang, X Z Lian, Y C Ma, W D Liu, Y W Zhang, Y K Xu, H J Cheng, Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003.
Shengnan Zhang , Xiaozheng Lian , Yanchao Ma , Weidan Liu , Yingwu Zhang , Yongkuan Xu and Hongjuan Cheng ,
Abstract: β-Ga2O3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors, Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga2O3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga2O3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga2O3 crystals were investigated systematically.
Key words: β-Ga2O3 single crystal, high quality, doping, electrical properties, optical properties
Abstract: β-Ga2O3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors, Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga2O3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga2O3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga2O3 crystals were investigated systematically.
Key words:
β-Ga2O3 single crystal, high quality, doping, electrical properties, optical properties
References:
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Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2 |
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Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals. Appl Phys Lett, 2013, 103(4): 3561 |
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Galazka Z, Uecker R, Irmscher K, et al. Czochralski growth and characterization of β-Ga2O3 single crystals. Cryst Res Technol, 2010, 45(12): 1229 |
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Higashiwaki M, Murakami H, Kumagai Y, et al. Current status of Ga2O3 power devices. Jpn J Appl Phys, 2016, 55(12): 1202A1 |
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Suzuki R, Nakagomi S, Kokubun Y, et al. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing. Appl Phys Lett, 2009, 94(22): A316 |
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Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7 |
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Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 1759 |
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Wong M H, Sasaki K, Kuramata A, et al. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 2015, 37(2): 212 |
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Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404(6): 184 |
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Liu X, Qiu G, Zhao Y, et al. Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods. J Alloys Compd, 2007, 439(1): 275 |
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Filippo E, Tepore M, Baldassarre F, et al. Synthesis of β-Ga2O3 microstructures with efficient photocatalytic activity by annealing of GaSe single crystal. Appl Surf Sci, 2015, 338: 69 |
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Onuma T, Fujiok S. Polarized Raman spectra in β-Ga2O3 single crystals. J Cryst Growth, 2014, 401: 330 |
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Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105 |
| [14] |
Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping. Appl Phys Lett, 2008, 92(20): A316 |
| [15] |
Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films. J Phys Chem Solids, 2014, 75(11): 1201 |
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Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675 |
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Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga2O3, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854 |
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Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga2O3. Acta Phys Sin, 2011, 60(3): 037103 |
| [1] |
Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2 |
| [2] |
Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals. Appl Phys Lett, 2013, 103(4): 3561 |
| [3] |
Galazka Z, Uecker R, Irmscher K, et al. Czochralski growth and characterization of β-Ga2O3 single crystals. Cryst Res Technol, 2010, 45(12): 1229 |
| [4] |
Higashiwaki M, Murakami H, Kumagai Y, et al. Current status of Ga2O3 power devices. Jpn J Appl Phys, 2016, 55(12): 1202A1 |
| [5] |
Suzuki R, Nakagomi S, Kokubun Y, et al. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing. Appl Phys Lett, 2009, 94(22): A316 |
| [6] |
Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7 |
| [7] |
Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 1759 |
| [8] |
Wong M H, Sasaki K, Kuramata A, et al. Field-plated Ga2O3 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 2015, 37(2): 212 |
| [9] |
Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404(6): 184 |
| [10] |
Liu X, Qiu G, Zhao Y, et al. Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods. J Alloys Compd, 2007, 439(1): 275 |
| [11] |
Filippo E, Tepore M, Baldassarre F, et al. Synthesis of β-Ga2O3 microstructures with efficient photocatalytic activity by annealing of GaSe single crystal. Appl Surf Sci, 2015, 338: 69 |
| [12] |
Onuma T, Fujiok S. Polarized Raman spectra in β-Ga2O3 single crystals. J Cryst Growth, 2014, 401: 330 |
| [13] |
Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105 |
| [14] |
Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping. Appl Phys Lett, 2008, 92(20): A316 |
| [15] |
Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films. J Phys Chem Solids, 2014, 75(11): 1201 |
| [16] |
Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675 |
| [17] |
Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga2O3, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854 |
| [18] |
Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga2O3. Acta Phys Sin, 2011, 60(3): 037103 |
S N Zhang, X Z Lian, Y C Ma, W D Liu, Y W Zhang, Y K Xu, H J Cheng, Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003.
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Manuscript received: 01 December 2017 Manuscript revised: 28 February 2018 Online: Accepted Manuscript: 26 April 2018 Uncorrected proof: 05 July 2018 Published: 09 August 2018
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