Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

Shengnan Zhang; Xiaozheng Lian; Yanchao Ma; Weidan Liu; Yingwu Zhang; Yongkuan Xu; Hongjuan Cheng

doi:10.1088/1674-4926/39/8/083003

Abstract: β-Ga₂O₃ is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors, Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga₂O₃ crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga₂O₃ single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga₂O₃ crystals were investigated systematically.

Key words: β-Ga₂O₃ single crystal, high quality, doping, electrical properties, optical properties

References:

[1]	Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2
[2]	Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga₂O₃ single crystals. Appl Phys Lett, 2013, 103(4): 3561
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[6]	Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga₂O₃ substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7
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[13]	Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga₂O₃ detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105
[14]	Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga₂O₃ by Si doping. Appl Phys Lett, 2008, 92(20): A316
[15]	Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ films. J Phys Chem Solids, 2014, 75(11): 1201
[16]	Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675
[17]	Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga₂O₃, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854
[18]	Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga₂O₃. Acta Phys Sin, 2011, 60(3): 037103

[1]	Kuramata A, Koshi K, Watanabe S, et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth. Appl Phys Lett, 2016, 55(12): 1202A2
[2]	Onuma T, Fujioka S, Yamaguchi T, et al. Correlation between blue luminescence intensity and resistivity in β-Ga₂O₃ single crystals. Appl Phys Lett, 2013, 103(4): 3561
[3]	Galazka Z, Uecker R, Irmscher K, et al. Czochralski growth and characterization of β-Ga₂O₃ single crystals. Cryst Res Technol, 2010, 45(12): 1229
[4]	Higashiwaki M, Murakami H, Kumagai Y, et al. Current status of Ga₂O₃ power devices. Jpn J Appl Phys, 2016, 55(12): 1202A1
[5]	Suzuki R, Nakagomi S, Kokubun Y, et al. Enhancement of responsivity in solar-blind β-Ga₂O₃ photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing. Appl Phys Lett, 2009, 94(22): A316
[6]	Shimamura K, Villora E G, Domen K, et al. Epitaxial growth of GaN on (100) β-Ga₂O₃ substrates by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2005, 44: L7
[7]	Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/ Ga₂O₃ (001) Schottky barrier diodes fabricated on n-Ga₂O₃ drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 1759
[8]	Wong M H, Sasaki K, Kuramata A, et al. Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 2015, 37(2): 212
[9]	Galazka Z, Irmscher K, Uecker R, et al. On the bulk β-Ga₂O₃ single crystals grown by the Czochralski method. J Cryst Growth, 2014, 404(6): 184
[10]	Liu X, Qiu G, Zhao Y, et al. Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods. J Alloys Compd, 2007, 439(1): 275
[11]	Filippo E, Tepore M, Baldassarre F, et al. Synthesis of β-Ga₂O₃ microstructures with efficient photocatalytic activity by annealing of GaSe single crystal. Appl Surf Sci, 2015, 338: 69
[12]	Onuma T, Fujiok S. Polarized Raman spectra in β-Ga₂O₃ single crystals. J Cryst Growth, 2014, 401: 330
[13]	Zhang Z, Farzana E, Arehart A, et al. Deep level defects throughout the bandgap of (010) β-Ga₂O₃ detected by optically and thermally stimulated defect spectroscopy. Appl Phys Lett, 2016, 108(7): 052105
[14]	Víllora E, Shimamura K, Yoshikawa Y, et al. Electrical conductivity and carrier concentration control in β-Ga₂O₃ by Si doping. Appl Phys Lett, 2008, 92(20): A316
[15]	Wang X, Zhang F, Saito K, et al. Electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ films. J Phys Chem Solids, 2014, 75(11): 1201
[16]	Harwig T, Kellendonk F, and Slappendel S. The ultraviolet luminescence of β-galliumsesquioxide. J Phys Chem Solids, 1978, 39(6): 675
[17]	Takakura K, Koga D, Ohyama H, et al. Evaluation of the crystalline quality of β-Ga₂O₃, films by optical absorption measurements. Physica B, 2009, 404(23/24): 4854
[18]	Zhang Y J, Yan J L, Zhao G, et al. First principles calculation and experimental research of Si-doped β-Ga₂O₃. Acta Phys Sin, 2011, 60(3): 037103

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Growth and characterization of 2-inch high quality β-Ga₂O₃ single crystals grown by EFG method

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