J. Semicond. > Volume 39 > Issue 8 > Article Number: 085002

A low standby-power fast carbon nanotube ternary SRAM cell with improved stability

Gang Li 1, , Pengjun Wang 1, 2, , , Yaopeng Kang 1, and Yuejun Zhang 1,

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Abstract: Power dissipation, speed and stability are the most important parameters for multiple-valued SRAM design. To reduce the power consumption and further improve the performance of the ternary SRAM cell, we propose a low standby-power fast ternary SRAM cell based on carbon nanotube field effect transistors (CNFETs). The performance is simulated in terms of three criteria including standby-power, delay (write and read) and stability (RSNM). Compared to the novel ternary SRAM cell, our results show that the average standby-power, write and read delay of the proposed cell are reduced by 78.1%, 39.6% and 58.2%, respectively. In addition, the RSNM under process variations is 2.01× and 1.95× of the conventional and novel ternary SRAM cells, respectively.

Key words: CNFETsternary SRAM celllow standby-powerhigh stability

Abstract: Power dissipation, speed and stability are the most important parameters for multiple-valued SRAM design. To reduce the power consumption and further improve the performance of the ternary SRAM cell, we propose a low standby-power fast ternary SRAM cell based on carbon nanotube field effect transistors (CNFETs). The performance is simulated in terms of three criteria including standby-power, delay (write and read) and stability (RSNM). Compared to the novel ternary SRAM cell, our results show that the average standby-power, write and read delay of the proposed cell are reduced by 78.1%, 39.6% and 58.2%, respectively. In addition, the RSNM under process variations is 2.01× and 1.95× of the conventional and novel ternary SRAM cells, respectively.

Key words: CNFETsternary SRAM celllow standby-powerhigh stability



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[1]

Cho G, Lombardi F. Design and process variation analysis of CNTFET-based ternary memory cells. Integr VLSI J, 2011, 54(C): 97

[2]

Kamar Z, Nepal K. Noise margin-optimized ternary CMOS SRAM delay and sizing characteristics. IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 2010: 801

[3]

Zhang Y J, Wang P J, Xiong B Y, et al. Design of a high information-density multiple valued 2-read 1-write register file. IEICE Electron Express, 2012, 9(11): 958

[4]

Appenzeller J. Carbon nanotubes for high-performance electronics—progress and prospect. Proc IEEE, 2008, 96(2): 201

[5]

Lin Y M, Appenzeller J, Knoch J, et al. High performance carbon nanotube field-effect transistor with tunable polarities. IEEE Trans Nanotechnol, 2005, 4(5): 481

[6]

Qiu C, Zhang Z, Xiao M, et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science, 2017, 355(6322): 271

[7]

You K, Nepal K. Design of a ternary static memory cell using carbon nanotube-based transistors. IET Micro & Nano Lett, 2011, 6(6): 381

[8]

Lin S, Kim Y B, Lombardi F. Design of a ternary memory cell using CNTFETs. IEEE Trans Nanotechnol, 2012, 11(5): 1019

[9]

Ghanatghestani M M, Pedram H, Ghavami B. Design of a low-standby power and high-speed ternary memory cell based on carbon nanotube field-effect transistor. J Comput Theor Nanosci, 2015, 12(12): 5457

[10]

Ebrahim A, Abdolreza D. A novel design of low power and high read stability ternary SRAM (T-SRAM), memory based on the modified gate diffusion input (m-GDI) method in nanotechnology. Microelectron J, 2016, 58: 44

[11]

Shin K, Choi W, Park J. Half-select free and bit-line sharing 9T SRAM for reliable supply voltage scaling. IEEE Trans Circ Syst I, 2017, 64(8): 2036

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Deng J, Wong H S P. A compact SPICE model for carbon-nanotube field effect transistors including nonidealities and its application-part II: model of the intrinsic channel region. IEEE Trans Electron Devices, 2007, 54(12): 3186

[13]

Tabrizchi S, Azimi N, Navi K. A novel ternary half adder and multiplier based on carbon nanotube field effect transistors. Front Inform Technol Electron Eng, 2017, 18(3): 423

[14]

Prabhu C M R, Singh A K. Low-power fast (LPF) SRAM cell for write/read operation. IEICE Electron Express, 2011, 8(18): 1473

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G Li, P J Wang, Y P Kang, Y J Zhang, A low standby-power fast carbon nanotube ternary SRAM cell with improved stability[J]. J. Semicond., 2018, 39(8): 085002. doi: 10.1088/1674-4926/39/8/085002.

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History

Manuscript received: 15 November 2017 Manuscript revised: 06 February 2018 Online: Uncorrected proof: 20 April 2018 Accepted Manuscript: 23 April 2018 Published: 09 August 2018

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