J. Semicond. > Volume 40 > Issue 7 > Article Number: 070403

Defect engineering in two-dimensional materials

Jie Jiang and Zhenhua Ni ,

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References:

[1]

Hu Z, Wu Z, Han C, et al. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev, 2018, 47, 3100

[2]

Lien D H, Uddin S Z, Yeh M, et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science, 2019, 364, 468

[3]

Han H V, Lu A Y, Lu L S, et al. Photoluminescence enhancement and structure repairing of monolayer MoSe2 by hydrohalic acid treatment. ACS Nano, 2016, 10, 1454

[4]

Nan H, Wang Z, Wang W, et al. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738

[5]

Yu Z, Pan Y, Shen Y, et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun, 2014, 5, 5290

[6]

Zhang X, Liao Q, Liu S, et al. Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode. Nat Commun, 2017, 8, 15881

[7]

Jiang J, Ling C, Xu T, et al. Defect engineering for modulating the trap states in 2D photoconductors. Adv Mater, 2018, 30, 1804332

[8]

Tosun M, Chan L, Amani M, et al. Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment. ACS Nano, 2016, 10, 6853

[9]

Giannazzo F, Fisichella G, Greco G, et al. Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization. ACS Appl Mater Inter, 2017, 9, 23164

[1]

Hu Z, Wu Z, Han C, et al. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev, 2018, 47, 3100

[2]

Lien D H, Uddin S Z, Yeh M, et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science, 2019, 364, 468

[3]

Han H V, Lu A Y, Lu L S, et al. Photoluminescence enhancement and structure repairing of monolayer MoSe2 by hydrohalic acid treatment. ACS Nano, 2016, 10, 1454

[4]

Nan H, Wang Z, Wang W, et al. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738

[5]

Yu Z, Pan Y, Shen Y, et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun, 2014, 5, 5290

[6]

Zhang X, Liao Q, Liu S, et al. Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode. Nat Commun, 2017, 8, 15881

[7]

Jiang J, Ling C, Xu T, et al. Defect engineering for modulating the trap states in 2D photoconductors. Adv Mater, 2018, 30, 1804332

[8]

Tosun M, Chan L, Amani M, et al. Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment. ACS Nano, 2016, 10, 6853

[9]

Giannazzo F, Fisichella G, Greco G, et al. Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization. ACS Appl Mater Inter, 2017, 9, 23164

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J Jiang, Z H Ni, Defect engineering in two-dimensional materials[J]. J. Semicond., 2019, 40(7): 070403. doi: 10.1088/1674-4926/40/7/070403.

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History

Manuscript received: Manuscript revised: Online: Accepted Manuscript: 05 June 2019 Uncorrected proof: 17 June 2019 Published: 05 July 2019

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