J. Semicond. > Volume 41 > Issue 12 > Article Number: 122103

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Yongkang Xu 1, 2, , Sannian Song 1, , , Wencheng Fang 1, 2, , Chengxing Li 1, 2, and Zhitang Song 1,

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Abstract: Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).

Key words: new phase change materialinductively couple plasmaetching processetching characteristicsmechanism

Abstract: Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).

Key words: new phase change materialinductively couple plasmaetching processetching characteristicsmechanism



References:

[1]

Ovshinsky S R. Reversible electrical switching phenomena in disordered structures. Phys Rev Lett, 1968, 21, 1450

[2]

Washington J S, Joseph E A, Raoux S, et al. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5. J Appl Phys, 2011, 109, 034502

[3]

Xu C, Liu B, Song Z T, et al. Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device. Thin Solid Films, 2008, 516, 7871

[4]

Song Z T, Song S N, Zhu M, et al. From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage. Sci China Inf Sci, 2018, 61, 081302

[5]

Rao F, Song Z T, Ren K, et al. Si–Sb–Te materials for phase change memory applications. Nanotechnology, 2011, 22, 145702

[6]

Li J T, Xia Y Y, Liu B, et al. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas. Appl Surf Sci, 2016, 378, 163

[7]

Li J T, Xia Y Y, Liu B, et al. Etch characteristics and mechanism of TiSbTe thin films in inductively-coupled HBr-He, Ar, N2, O2 plasma. ECS J Solid State Sci Technol, 2016, 5, P330

[8]

Shen L L, Song S N, Zhang Z H, et al. Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas. Thin Solid Films, 2015, 593, 67

[9]

Zhang Z H, Song S N, Song Z T, et al. Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas. Microelectron Eng, 2014, 115, 51

[10]

Kang S K, Jeon M H, Park J Y, et al. Etch damage of Ge2Sb2Te5 for different halogen gases. Jpn J Appl Phys, 2011, 50, 086501

[1]

Ovshinsky S R. Reversible electrical switching phenomena in disordered structures. Phys Rev Lett, 1968, 21, 1450

[2]

Washington J S, Joseph E A, Raoux S, et al. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5. J Appl Phys, 2011, 109, 034502

[3]

Xu C, Liu B, Song Z T, et al. Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device. Thin Solid Films, 2008, 516, 7871

[4]

Song Z T, Song S N, Zhu M, et al. From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage. Sci China Inf Sci, 2018, 61, 081302

[5]

Rao F, Song Z T, Ren K, et al. Si–Sb–Te materials for phase change memory applications. Nanotechnology, 2011, 22, 145702

[6]

Li J T, Xia Y Y, Liu B, et al. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas. Appl Surf Sci, 2016, 378, 163

[7]

Li J T, Xia Y Y, Liu B, et al. Etch characteristics and mechanism of TiSbTe thin films in inductively-coupled HBr-He, Ar, N2, O2 plasma. ECS J Solid State Sci Technol, 2016, 5, P330

[8]

Shen L L, Song S N, Zhang Z H, et al. Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas. Thin Solid Films, 2015, 593, 67

[9]

Zhang Z H, Song S N, Song Z T, et al. Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas. Microelectron Eng, 2014, 115, 51

[10]

Kang S K, Jeon M H, Park J Y, et al. Etch damage of Ge2Sb2Te5 for different halogen gases. Jpn J Appl Phys, 2011, 50, 086501

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Y K Xu, S N Song, W C Fang, C X Li, Z T Song, The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma[J]. J. Semicond., 2020, 41(12): 122103. doi: 10.1088/1674-4926/41/12/122103.

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History

Manuscript received: 22 April 2020 Manuscript revised: 26 May 2020 Online: Accepted Manuscript: 11 August 2020 Uncorrected proof: 14 September 2020 Published: 08 December 2020

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