J. Semicond. > Volume 41 > Issue 12 > Article Number: 122803

RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET

Narendra Yadava , , Shivangi Mani and R. K. Chauhan

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Abstract: The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance (gm) gate dependent intrinsic-capacitances (Cgd and Cgs), cutoff frequency (fT), gain bandwidth (GBW) product and output-conductance (gd). Similarly, power-gain (Gp), power added efficiency (PAE), and output power (POUT) are also investigated for large-signal continuous-wave (CW) RF performance evaluation. The motive behind the study is to improve the β-Ga2O3 MOS device performance along with a reduction in power losses and device associated leakages. To show the applicability of the designed device in RF applications, its RF FOMs are analyzed. With the outline characteristics of the ultrathin black phosphorous layer below the β-Ga2O3 channel region, the proposed device results in 1.09 times improvement in fT, with 0.7 times lower Cgs, and 3.27 dB improved GP in comparison to the NiO-GO MOSFET. The results indicate that the designed NiO-GO/BP MOSFET has better RF performance with improved power gain and low leakages.

Key words: wide band-gap semiconductorRF FOMsGa2O3black phosphorus

Abstract: The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance (gm) gate dependent intrinsic-capacitances (Cgd and Cgs), cutoff frequency (fT), gain bandwidth (GBW) product and output-conductance (gd). Similarly, power-gain (Gp), power added efficiency (PAE), and output power (POUT) are also investigated for large-signal continuous-wave (CW) RF performance evaluation. The motive behind the study is to improve the β-Ga2O3 MOS device performance along with a reduction in power losses and device associated leakages. To show the applicability of the designed device in RF applications, its RF FOMs are analyzed. With the outline characteristics of the ultrathin black phosphorous layer below the β-Ga2O3 channel region, the proposed device results in 1.09 times improvement in fT, with 0.7 times lower Cgs, and 3.27 dB improved GP in comparison to the NiO-GO MOSFET. The results indicate that the designed NiO-GO/BP MOSFET has better RF performance with improved power gain and low leakages.

Key words: wide band-gap semiconductorRF FOMsGa2O3black phosphorus



References:

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[2]

Johnson E. Physical limitations on frequency and power parameters of transistors. 1958 IRE International Convention Record, 1966, 13, 27

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Chabak K D, Leedy K D, Green A J, et al. Lateral β-Ga2O3 field effect transistors. Semicond Sci Technol, 2020, 35(1), 013002

[4]

Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl Phys Lett, 2013, 103(12), 123511

[5]

Chabak K D, McCandless J P, Moser N A, et al. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs. IEEE Electron Device Lett, 2018, 39(1), 67

[6]

Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100(1), 13504

[7]

Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110(10), 103506

[8]

Green A J, Chabak K D, Baldini M, et al. β-Ga2O3 MOSFETs for radio frequency operation. IEEE Electron Device Lett, 2017, 38(6), 790

[9]

Yang J, Ahn S, Ren F, et al. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3. Appl Phys Lett, 2017, 110(19), 192010

[10]

Mastro M A, Kuramata A, Calkins J, et al. Perspective—opportunities and future directions for Ga2O3. ECS J Solid State Sci Technol, 2017, 6(5), P356

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Das S, Zhang W, Demarteau M, et al. Tunable transport gap in phosphorene. Nano Lett, 2014, 14(10), 5733

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Schmidt H, Giustiniano F, Eda G. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Chem Soc Rev, 2015, 44, 7715

[14]

Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9(5), 372

[15]

Yan X, Esqueda I S, Ma J, et al. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure. Appl Phys Lett, 2018, 112(3), 032101

[16]

Kumar A, Tripathi M M, Chaujar R. Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattices Microstruct, 2018, 116, 171

[17]

Yadava N, Chauhan R K. RF performance investigation of β-Ga2O3/graphene and β-Ga2O3/black phosphorus heterostructure MOSFETs. ECS J Solid State Sci Technol, 2019, 8(7), Q3058

[18]

Chikoidze E, Fellous A, Perez-Tomas A, et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Mater Today Phys, 2017, 3, 118

[19]

Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga2O3. Appl Phys Lett, 2018, 112(3), 032108

[20]

FLOSFIA Inc., Kyoto University Advanced Electronic Materials Laboratory

[21]

Kokubun Y, Kubo S, Nakagomi S. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 2016, 9(9), 091101

[22]

Yadava N, Chauhan R K. RF performance enhancement of gallium oxide MOSFET using p-type NiO pocket near source and drain regions. J Telecomm, Electron Comput Eng, 2019, 11(4), 19

[23]

ATLAS User's manual, SILVACO, Santa Clara, CA, USA, 2014

[24]

Zeng K, Wallace J S, Heimburger C, et al. Ga2O3 MOSFETs using spin-on-glass source/drain doping technology. IEEE Electron Device Lett, 2017, 38(4), 513

[25]

Park Y. Developing MOS structures in gallium oxide for high-power electronics and energy savings applications. Master of Science Thesis, University of Oslo, Norway, 2018

[26]

Sasaki K, Higashiwaki M, Kuramata A, et al. Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts. Appl Phys Express, 2013, 6(8), 086502

[1]

Baliga B J. Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Lett, 1989, 10(10), 455

[2]

Johnson E. Physical limitations on frequency and power parameters of transistors. 1958 IRE International Convention Record, 1966, 13, 27

[3]

Chabak K D, Leedy K D, Green A J, et al. Lateral β-Ga2O3 field effect transistors. Semicond Sci Technol, 2020, 35(1), 013002

[4]

Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl Phys Lett, 2013, 103(12), 123511

[5]

Chabak K D, McCandless J P, Moser N A, et al. Recessed-gate enhancement-mode β-Ga2O3 MOSFETs. IEEE Electron Device Lett, 2018, 39(1), 67

[6]

Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100(1), 13504

[7]

Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110(10), 103506

[8]

Green A J, Chabak K D, Baldini M, et al. β-Ga2O3 MOSFETs for radio frequency operation. IEEE Electron Device Lett, 2017, 38(6), 790

[9]

Yang J, Ahn S, Ren F, et al. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3. Appl Phys Lett, 2017, 110(19), 192010

[10]

Mastro M A, Kuramata A, Calkins J, et al. Perspective—opportunities and future directions for Ga2O3. ECS J Solid State Sci Technol, 2017, 6(5), P356

[11]

Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5, 487

[12]

Das S, Zhang W, Demarteau M, et al. Tunable transport gap in phosphorene. Nano Lett, 2014, 14(10), 5733

[13]

Schmidt H, Giustiniano F, Eda G. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Chem Soc Rev, 2015, 44, 7715

[14]

Li L, Yu Y, Ye G J, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9(5), 372

[15]

Yan X, Esqueda I S, Ma J, et al. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure. Appl Phys Lett, 2018, 112(3), 032101

[16]

Kumar A, Tripathi M M, Chaujar R. Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications. Superlattices Microstruct, 2018, 116, 171

[17]

Yadava N, Chauhan R K. RF performance investigation of β-Ga2O3/graphene and β-Ga2O3/black phosphorus heterostructure MOSFETs. ECS J Solid State Sci Technol, 2019, 8(7), Q3058

[18]

Chikoidze E, Fellous A, Perez-Tomas A, et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Mater Today Phys, 2017, 3, 118

[19]

Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga2O3. Appl Phys Lett, 2018, 112(3), 032108

[20]

FLOSFIA Inc., Kyoto University Advanced Electronic Materials Laboratory

[21]

Kokubun Y, Kubo S, Nakagomi S. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 2016, 9(9), 091101

[22]

Yadava N, Chauhan R K. RF performance enhancement of gallium oxide MOSFET using p-type NiO pocket near source and drain regions. J Telecomm, Electron Comput Eng, 2019, 11(4), 19

[23]

ATLAS User's manual, SILVACO, Santa Clara, CA, USA, 2014

[24]

Zeng K, Wallace J S, Heimburger C, et al. Ga2O3 MOSFETs using spin-on-glass source/drain doping technology. IEEE Electron Device Lett, 2017, 38(4), 513

[25]

Park Y. Developing MOS structures in gallium oxide for high-power electronics and energy savings applications. Master of Science Thesis, University of Oslo, Norway, 2018

[26]

Sasaki K, Higashiwaki M, Kuramata A, et al. Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts. Appl Phys Express, 2013, 6(8), 086502

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N Yadava, S Mani, R K Chauhan, RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET[J]. J. Semicond., 2020, 41(12): 122803. doi: 10.1088/1674-4926/41/12/122803.

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Manuscript received: 01 April 2020 Manuscript revised: 11 May 2020 Online: Uncorrected proof: 03 August 2020 Published: 08 December 2020

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