J. Semicond. > Volume 41 > Issue 5 > Article Number: 051205

The application of halide perovskites in memristors

Gang Cao 1, 2, , Chuantong Cheng 1, , , Hengjie Zhang 1, , Huan Zhang 1, , Run Chen 1, , Beiju Huang 1, , Xiaobing Yan 2, , , Weihua Pei 1, and Hongda Chen 1, 3,

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Abstract: New neuromorphic architectures and memory technologies with low power consumption, scalability and high-speed are in the spotlight due to the von Neumann bottleneck and limitations of Moore's law. The memristor, a two-terminal synaptic device, shows powerful capabilities in neuromorphic computing and information storage applications. Active materials with high defect migration speed and low defect migration barrier are highly promising for high-performance memristors. Halide perovskite (HP) materials with point defects (such as gaps, vacancies, and inversions) have strong application potential in memristors. In this article, we review recent advances on HP memristors with exceptional performances. First, the working mechanisms of memristors are described. Then, the structures and properties of HPs are explained. Both electrical and photonic HP-based memristors are overviewed and discussed. Different fabrication methods of HP memristor devices and arrays are described and compared. Finally, the challenges in integrating HP memristors with complementary metal oxide semiconductors (CMOS) are briefly discussed. This review can assist in developing HP memristors for the next-generation information technology.

Key words: halide perovskitesmemristorsfabrication methodsCMOS

Abstract: New neuromorphic architectures and memory technologies with low power consumption, scalability and high-speed are in the spotlight due to the von Neumann bottleneck and limitations of Moore's law. The memristor, a two-terminal synaptic device, shows powerful capabilities in neuromorphic computing and information storage applications. Active materials with high defect migration speed and low defect migration barrier are highly promising for high-performance memristors. Halide perovskite (HP) materials with point defects (such as gaps, vacancies, and inversions) have strong application potential in memristors. In this article, we review recent advances on HP memristors with exceptional performances. First, the working mechanisms of memristors are described. Then, the structures and properties of HPs are explained. Both electrical and photonic HP-based memristors are overviewed and discussed. Different fabrication methods of HP memristor devices and arrays are described and compared. Finally, the challenges in integrating HP memristors with complementary metal oxide semiconductors (CMOS) are briefly discussed. This review can assist in developing HP memristors for the next-generation information technology.

Key words: halide perovskitesmemristorsfabrication methodsCMOS



References:

[1]

Ielmini D. Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks. Microelectron Eng, 2018, 190, 44

[2]

Bliss T V P, Collingridge G L. A synaptic model of memory: long-term potentiation in the hippocampus. Nature, 1993, 361(6407), 31

[3]

Chua L. Resistance switching memories are memristors. Appl Phys A, 2011, 102(4), 765

[4]

Yao P, Wu H, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577(7792), 641

[5]

Cai F, Correll J M, Lee S H, et al. A fully integrated reprogrammable memristor–CMOS system for efficient multiply-accumulate operations. Nat Electron, 2019, 2(7), 290

[6]

Qian W H, Cheng X F, Zhou J, et al. Lead-free perovskite MASnBr3-based memristor for quaternary information storage. InfoMat, 2019

[7]

Pang Y, Gao B, Lin B, et al. Memristors for hardware security applications. Adv Electron Mater, 2019, 5(9), 1800872

[8]

Chen X, Zhou Y, Roy V A L, et al. Evolutionary metal oxide clusters for novel applications: toward high-density data storage in nonvolatile memories. Adv Mater, 2018, 30(3), 1703950

[9]

Tan Z H, Yang R, Terabe K, et al. Synaptic metaplasticity realized in oxide memristive devices. Adv Mater, 2016, 28(2), 377

[10]

Han S T, Zhou Y, Roy V A L. Towards the development of flexible non-volatile memories. Adv Mater, 2013, 25(38), 5425

[11]

Yoo S, Eom T, Gwon T, et al. Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer. Nanoscale, 2015, 7(14), 6340

[12]

Gu C, Lee J S. Flexible hybrid organic-inorganic perovskite memory. ACS nano, 2016, 10(5), 5413

[13]

Tian H, Zhao L, Wang X, et al. Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing. ACS Nano, 2017, 11(12), 12247

[14]

Zhou F, Liu Y, Shen X, et al. Low-voltage, optoelectronic CH3NH3PbI3– xClx memory with integrated sensing and logic operations. Adv Funct Mater, 2018, 28(15), 1800080

[15]

Stranks S D, Snaith H J. Metal-halide perovskites for photovoltaic and light-emitting devices. Nat Nanotechnol, 2015, 10(5), 391

[16]

Chen Q, De Marco N, Yang Y M, et al. Under the spotlight: The organic-inorganic hybrid halide perovskite for optoelectronic applications. Nano Today, 2015, 10(3), 355

[17]

Dong Q, Fang Y, Shao Y, et al. Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals. Science, 2015, 347(6225), 967

[18]

Lee M M, Teuscher J, Miyasaka T, et al. Efficient hybrid solar cells based on meso-superstructure organometal halide perovskites. Science, 2012, 338(6107), 643

[19]

Fang Y, Dong Q, Shao Y, et al. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Nat Photonics, 2015, 9(10), 679

[20]

Shi D, Adinolfi V, Comin R, et al. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals. Science, 2015, 347(6221), 519

[21]

Li F, Wang H, Kufer D, et al. Ultrahigh carrier mobility achieved in photoresponsive hybrid perovskite films via coupling with single-walled carbon nanotubes. Adv Mater, 2017, 29(16), 1602432

[22]

Anand B, Sampat S, Danilov E O, et al. Broadband transient absorption study of photoexcitations in lead halide perovskites: Towards a multiband picture. Phys Rev B, 2016, 93(16), 161205

[23]

Tan Z K, Moghaddam R S, Lai M L, et al. Bright light-emitting diodes based on organometal halide perovskite. Nat Nanotechnol, 2014, 9(9), 687

[24]

Senanayak S P, Yang B, Thomas T H, et al. Understanding charge transport in lead iodide perovskite thin-film field-effect transistors. Sci Adv, 2017, 3(1), e1601935

[25]

Wang K, Wu C, Yang D, et al. Quasi-two-dimensional halide perovskite single crystal photodetector. ACS Nano, 2018, 12(5), 4919

[26]

Yang T Y, Gregori G, Pellet N, et al. The significance of ion conduction in a hybrid organic-inorganic lead-iodide-based perovskite photosensitizer. Angew Chem Int Ed, 2015, 54(27), 7905

[27]

Haruyama J, Sodeyama K, Han L, et al. First-principles study of ion diffusion in perovskite solar cell sensitizers. J Am Chem Soc, 2015, 137(32), 10048

[28]

Chua L. Memristor-the missing circuit element. IEEE Trans Circuit Theory, 1971, 18(5), 507

[29]

Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453(7191), 80

[30]

Yoon J H, Zhang J, Ren X, et al. Truly electroforming-free and low-energy memristors with preconditioned conductive tunneling paths. Adv Funct Mater, 2017, 27(35), 1702010

[31]

Ielmini D, Wong H S P. In-memory computing with resistive switching devices. Nat Electron, 2018, 1(6), 333

[32]

Xiao Z, Yuan Y, Shao Y, et al. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nat Mater, 2015, 14(2), 193

[33]

Xu J, Zhao X, Wang Z, et al. Biodegradable natural pectin-based flexible multilevel resistive switching memory for transient electronics. Small, 2019, 15(4), 1803970

[34]

Yan X, Wang K, Zhao J, et al. A new memristor with 2D Ti3C2T x MXene flakes as an artificial bio-synapse. Small, 2019, 15(25), 1900107

[35]

Yu F, Zhu L, Xiao H, et al. Restickable oxide neuromorphic transistors with spike-timing-dependent plasticity and pavlovian associative learning activities. Adv Funct Mater, 2018, 28(44), 1804025

[36]

Yan X, Li X, Zhou Z, et al. Flexible transparent organic artificial synapse based on the tungsten/egg albumen/indium tin oxide/polyethylene terephthalate memristor. ACS Appl Mater Interfaces, 2019, 11(20), 18654

[37]

Yan X, Zhao Q, Chen A P, et al. Vacancy-induced synaptic behavior in 2D WS2 nanosheet-based memristor for low-power neuromorphic computing. Small, 2019, 15(24), 1901423

[38]

Choi S, Tan S H, Li Z, et al. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations. Nat Mater, 2018, 17(4), 335

[39]

Yan X, Zhao J, Liu S, et al. Memristor with Ag-cluster-doped TiO2 films as artificial synapse for Neuroinspired computing. Adv Funct Mater, 2018, 28(1), 1705320

[40]

Zhu X, Li D, Liang X, et al. Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing. Nat Mater, 2019, 18(2), 141

[41]

Muenstermann R, Menke T, Dittmann R, et al. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices. Adv Mater, 2010, 22(43), 4819

[42]

Jeong H Y, Lee J Y, Choi S Y. Interface-engineered amorphous TiO2-based resistive memory devices. Adv Funct Mater, 2010, 20(22), 3912

[43]

Yang Y, Huang R. Probing memristive switching in nanoionic devices. Nat Electron, 2018, 1(5), 274

[44]

Budiman F, Hernowo D G O, Pandey R R, et al. Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption. Jpn J Appl Phys, 2018, 57(3S2), 03EA06

[45]

Chen J Y, Huang C W, Chiu C H, et al. Switching kinetic of VCM-based memristor: evolution and positioning of nanofilament. Adv Mater, 2015, 27(34), 5028

[46]

Liu Q, Sun J, Lv H, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte based ReRAM. Adv Mater, 2012, 24(14), 1844

[47]

Yang Y, Gao P, Li L, et al. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun, 2014, 5(1), 1

[48]

Yang Y, Lee J, Lee S, et al. Oxide resistive memory with functionalized graphene as built-in selector element. Adv Mater, 2014, 26(22), 3693

[49]

Kim S, Choi S H, Lu W. Comprehensive physical model of dynamic resistive switching in an oxide memristor. ACS Nano, 2014, 8(3), 2369

[50]

Xue W, Liu G, Zhong Z, et al. A 1D vanadium dioxide nanochannel constructed via electric-field-induced ion transport and its superior metal-insulator transition. Adv Mater, 2017, 29(39), 1702162

[51]

Wang Z Q, Xu H Y, Li X H, et al. Memristors: synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO Memristor. Adv Funct Mater, 2012, 22(13), 2758

[52]

Chang C F, Chen J Y, Huang C W, et al. Direct observation of dual-filament switching behaviors in Ta2O5-based memristors. Small, 2017, 13(15), 1603116

[53]

Yan X, Zhou Z, Ding B, et al. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure. J Mater Chem C, 2017, 5(9), 2259

[54]

Gao S, Liu G, Yang H, et al. An oxide Schottky junction artificial optoelectronic synapse. ACS Nano, 2019, 13(2), 2634

[55]

Tan H, Liu G, Zhu X, et al. An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions. Adv Mater, 2015, 27(17), 2797

[56]

Murphy E L, Good R H Jr. Thermionic emission, field emission, and the transition region. Phys Rev, 1956, 102(6), 1464

[57]

Emtage P R, Tantraporn W. Schottky emission through thin insulating films. Phys Rev Lett, 1962, 8(7), 267

[58]

Simmons J G. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. J Appl Phys, 1963, 34(9), 2581

[59]

Svensson C, Lundström I. Trap-assisted charge injection in MNOS structures. J Appl Phys, 1973, 44(10), 4657

[60]

Ma Y, Wang S, Zheng L, et al. Recent research developments of perovskite solar cells. Chin J Chem, 2014, 32(10), 957

[61]

Shi Z, Guo J, Chen Y, et al. Lead-free organic-inorganic hybrid Perovskites for photovoltaic applications: recent advances and perspectives. Adv Mater, 2017, 29(16), 1605005

[62]

Miyata A, Mitioglu A, Plochocka P, et al. Direct measurement of the exciton binding energy and effective masses for charge carriers in organic-inorganic tri-halide perovskites. Nat Phys, 2015, 11(7), 582

[63]

Stoumpos C C, Kanatzidis M G. Halide perovskites: poor man's high-performance semiconductors. Adv Mater, 2016, 28(28), 5778

[64]

Yao J S, Ge J, Han B N, et al. Ce3+-doping to modulate photoluminescence kinetics for efficient CsPbBr3 nanocrystals-based light-emitting diodes. J Am Chem Soc, 2018, 140(10), 3626

[65]

Swarnkar A, Ravi V K, Nag A. Beyond colloidal cesium lead halide perovskite nanocrystals: analogous metal halides and doping. ACS Energy Lett, 2017, 2(5), 1089

[66]

Liang J, Liu J, Jin Z. All-inorganic halide perovskites for optoelectronics: progress and prospects. Sol RRL, 2017, 1(10), 1700086

[67]

Yoo E J, Lyu M, Yun J H, et al. Resistive switching behavior in organic-inorganic hybrid CH3NH3PbI3– xClx perovskite for resistive random-access memory devices. Adv Mater, 2015, 27(40), 6170

[68]

Wang H, Kim D H. Perovskite-based photodetectors: materials and devices. Chem Soc Rev, 2017, 46(17), 5204

[69]

Zhou J, Huang J. Photodetectors based on organic-inorganic hybrid lead halide perovskites. Adv Sci, 2018, 5(1), 1700256

[70]

Choi J, Han J S, Hong K, et al. Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses. Adv Mater, 2018, 30(42), 1704002

[71]

Tress W. Metal halide perovskites as mixed electronic-ionic conductors: challenges and opportunities from hysteresis to memristivity. J Phys Chem Lett, 2017, 8(13), 3106

[72]

Ma Z, Li F, Qi G, et al. Structural stability and optical properties of two-dimensional perovskite-like CsPb2Br5 microplates in response to pressure. Nanoscale, 2019, 11(3), 820

[73]

Xing G, Mathews N, Sun S, et al. Long-range balanced electron- and hole-transport lengths in organic–inorganic CH3NH3PbI3. Science, 2013, 342(6156), 344

[74]

Weidman M C, Seitz M, Stranks S D, et al. Highly tunable colloidal perovskite nanoplatelets through variable cation, metal, and halide composition. ACS Nano, 2016, 10(8), 7830

[75]

Cuhadar C, Kim S G, Yang J M, et al. All-inorganic bismuth halide perovskite-like materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for low-voltage switching resistive memory. ACS Appl Mater Interfaces, 2018, 10(35), 29741

[76]

Acharyya P, Pal P, Samanta P K, et al. Single pot synthesis of indirect band gap 2D CsPb2Br5 nanosheets from direct band gap 3D CsPbBr3 nanocrystals and the origin of their luminescence properties. Nanoscale, 2019, 11(9), 4001

[77]

Iwahara H. Ionic conduction in perovskite-type compounds. In: Perovskite Oxide for Solid Oxide Fuel Cells. Boston: Springer, 2009, 45

[78]

Li C, Tscheuschner S, Paulus F, et al. Iodine migration and its effect on hysteresis in perovskite solar cells. Adv Mater, 2016, 28(12), 2446

[79]

Leng K, Abdelwahab I, Verzhbitskiy I, et al. Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation. Nat Mater, 2018, 17(10), 908

[80]

Qian L, Sun Y, Wu M, et al. A lead-free two-dimensional perovskite for a high-performance flexible photoconductor and a light-stimulated synaptic device. Nanoscale, 2018, 10(15), 6837

[81]

Prezioso M, Merrikh-Bayat F, Hoskins B D, et al. Training and operation of an integrated neuromorphic network based on metal–oxide memristors. Nature, 2015, 521(7550), 61

[82]

Liu S J, Lin Z H, Zhao Q, et al. Flash-memory effect for polyfluorenes with on-chain iridium (III) complexes. Adv Funct Mater, 2011, 21(5), 979

[83]

Zhao L, Wang K, Wei W, et al. High-performance flexible sensing devices based on polyaniline/MXene nanocomposites. InfoMat, 2019, 1(3), 407

[84]

Lin G, Lin Y, Cui R, et al. An organic-inorganic hybrid perovskite logic gate for better computing. J Mater Chem C, 2015, 3(41), 10793

[85]

Yan K, Peng M, Yu X, et al. High-performance perovskite memristor based on methyl ammonium lead halides. J Mater Chem C, 2016, 4(7), 1375

[86]

Yang J M, Choi E S, Kim S Y, et al. Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing. Nanoscale, 2019, 11(13), 6453

[87]

Choi J, Park S, Lee J, et al. Organolead halide perovskites for low operating voltage multilevel resistive switching. Adv Mater, 2016, 28(31), 6562

[88]

Yang J M, Kim S G, Seo J Y, et al. 1D hexagonal HC(NH2)2PbI3 for multilevel resistive switching nonvolatile memory. Adv Electron Mater, 2018, 4(9), 1800190

[89]

Wang W, Xu J, Ma H, et al. Insertion of nanoscale AgInSbTe layer between the Ag electrode and the CH3NH3PbI3 electrolyte layer enabling enhanced multilevel memory. ACS Appl Nano Mater, 2019, 2(1), 307

[90]

Guan X, Hu W, Haque M A, et al. Light-responsive ion-redistribution-induced resistive switching in hybrid perovskite Schottky junctions. Adv Funct Mater, 2018, 28(3), 1704665

[91]

Hwang B, Lee J S. A strategy to design high-density nanoscale devices utilizing vapor deposition of metal halide perovskite materials. Adv Mater, 2017, 29(29), 1701048

[92]

Zhu X, Lee J, Lu W D. Iodine vacancy redistribution in organic–inorganic halide perovskite films and resistive switching effects. Adv Mater, 2017, 29(29), 1700527

[93]

Lin C C, Tu B C, Lin C H, et al. Resistive switching mechanisms of V-doped SrZrO3 memory films. IEEE Electron Device Lett, 2006, 27(9), 725

[94]

Yoo E, Lyu M, Yun J H, et al. Bifunctional resistive switching behavior in an organolead halide perovskite-based Ag/CH3NH3PbI3– xClx/FTO structure. J Mater Chem C, 2016, 4(33), 7824

[95]

Xiao Z, Huang J. Energy-efficient hybrid perovskite memristors and synaptic devices. Adv Electron Mater, 2016, 2(7), 1600100

[96]

Yan X, Zhang L, Chen H, et al. Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning. Adv Funct Mater, 2018, 28(40), 1803728

[97]

Yan X, Pei Y, Chen H, et al. Self-assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors. Adv Mater, 2019, 31(7), 1805284

[98]

Xu W, Cho H, Kim Y H, et al. Organometal halide perovskite artificial synapses. Adv Mater, 2016, 28(28), 5916

[99]

Gholipour B, Bastock P, Craig C, et al. Amorphous metal-sulphide microfibers enable photonic synapses for brain-like computing. Adv Opt Mater, 2015, 3(5), 635

[100]

Pei K, Ren X, Zhou Z, et al. A high-performance optical memory array based on inhomogeneity of organic semiconductors. Adv Mater, 2018, 30(13), 1706647

[101]

Gorecki J, Apostolopoulos V, Ou J Y, et al. Optical gating of graphene on photoconductive Fe: LiNbO3. ACS Nano, 2018, 12(6), 5940

[102]

Shen Y, Harris N C, Skirlo S, et al. Deep learning with coherent nanophotonic circuits. Nat Photonics, 2017, 11(7), 441

[103]

Dai S, Zhao Y, Wang Y, et al. Recent advances in transistor-based artificial synapses. Adv Funct Mater, 2019, 29(42), 1903700

[104]

Wu Y, Wei Y, Huang Y, et al. Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors. Nano Res, 2017, 10(5), 1584

[105]

Yizhar O, Fenno L E, Davidson T J, et al. Optogenetics in neural systems. Neuron, 2011, 71(1), 9

[106]

Liu X, Ramirez S, Pang P T, et al. Optogenetic stimulation of a hippocampal engram activates fear memory recall. Nature, 2012, 484(7394), 381

[107]

Zhu X, Lu W D. Optogenetics-inspired tunable synaptic functions in memristors. ACS Nano, 2018, 12(2), 1242

[108]

Fenno L, Yizhar O, Deisseroth K. The development and application of optogenetics. Annu Rev Neurosci, 2011, 34, 389

[109]

Kramer R H, Mourot A, Adesnik H. Optogenetic pharmacology for control of native neuronal signaling proteins. Nat Neurosci, 2013, 16(7), 816

[110]

Sun Y, Qian L, Xie D, et al. Photoelectric synaptic plasticity realized by 2D perovskite. Adv Funct Mater, 2019, 29(28), 1902538

[111]

Jeon N J, Noh J H, Yang W S, et al. Compositional engineering of perovskite materials for high-performance solar cells. Nature, 2015, 517(7535), 476

[112]

Lim K G, Ahn S, Kim Y H, et al. Universal energy level tailoring of self-organized hole extraction layers in organic solar cells and organic-inorganic hybrid perovskite solar cells. Energy Environ Sci, 2016, 9(3), 932

[113]

Cheng C, Zhu C, Huang B, et al. Processing halide perovskite materials with semiconductor technology. Adv Mater Technol, 2019, 4(7), 1800729

[114]

Chamlagain B, Li Q, Ghimire N J, et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. ACS Nano, 2014, 8(5), 5079

[115]

Skoblin G, Sun J, Yurgens A. Encapsulation of graphene in parylene. Appl Phys Lett, 2017, 110(5), 053504

[116]

Kim M, Shah A, Li C, et al. Direct transfer of wafer-scale graphene films. 2D Mater, 2017, 4(3), 035004

[117]

Yang X, Wu J, Liu T, et al. Patterned perovskites for optoelectronic applications. Small Methods, 2018, 2(10), 1800110

[118]

Wang G, Li D, Cheng H C, et al. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics. Sci Adv, 2015, 1(9), e1500613

[119]

He X, Liu P, Zhang H, et al. Patterning multicolored microdisk laser arrays of cesium lead halide perovskite. Adv Mater, 2017, 29(12), 1604510

[120]

Zhao P, Kim B J, Ren X, et al. Antisolvent with an ultrawide processing window for the one-step fabrication of efficient and large-area perovskite solar cells. Adv Mater, 2018, 30(49), 1802763

[121]

Ren Y K, Ding X H, Wu Y H, et al. Temperature-assisted rapid nucleation: a facile method to optimize the film morphology for perovskite solar cells. J Mater Chem A, 2017, 5(38), 20327

[122]

Sanchez S, Christoph N, Grobety B, et al. Efficient and stable inorganic perovskite solar cells manufactured by pulsed flash infrared annealing. Adv Energy Mater, 2018, 8(30), 1802060

[123]

Li D, Cheng H C, Wang Y, et al. The effect of thermal annealing on charge transport in organolead halide perovskite microplate field-effect transistors. Adv Mater, 2017, 29(4), 1601959

[124]

Wang Y, Li M, Li H, et al. Patterned wettability surface for competition-driving large-grained perovskite solar cells. Adv Energy Mater, 2019, 9(25), 1900838

[1]

Ielmini D. Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks. Microelectron Eng, 2018, 190, 44

[2]

Bliss T V P, Collingridge G L. A synaptic model of memory: long-term potentiation in the hippocampus. Nature, 1993, 361(6407), 31

[3]

Chua L. Resistance switching memories are memristors. Appl Phys A, 2011, 102(4), 765

[4]

Yao P, Wu H, Gao B, et al. Fully hardware-implemented memristor convolutional neural network. Nature, 2020, 577(7792), 641

[5]

Cai F, Correll J M, Lee S H, et al. A fully integrated reprogrammable memristor–CMOS system for efficient multiply-accumulate operations. Nat Electron, 2019, 2(7), 290

[6]

Qian W H, Cheng X F, Zhou J, et al. Lead-free perovskite MASnBr3-based memristor for quaternary information storage. InfoMat, 2019

[7]

Pang Y, Gao B, Lin B, et al. Memristors for hardware security applications. Adv Electron Mater, 2019, 5(9), 1800872

[8]

Chen X, Zhou Y, Roy V A L, et al. Evolutionary metal oxide clusters for novel applications: toward high-density data storage in nonvolatile memories. Adv Mater, 2018, 30(3), 1703950

[9]

Tan Z H, Yang R, Terabe K, et al. Synaptic metaplasticity realized in oxide memristive devices. Adv Mater, 2016, 28(2), 377

[10]

Han S T, Zhou Y, Roy V A L. Towards the development of flexible non-volatile memories. Adv Mater, 2013, 25(38), 5425

[11]

Yoo S, Eom T, Gwon T, et al. Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer. Nanoscale, 2015, 7(14), 6340

[12]

Gu C, Lee J S. Flexible hybrid organic-inorganic perovskite memory. ACS nano, 2016, 10(5), 5413

[13]

Tian H, Zhao L, Wang X, et al. Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing. ACS Nano, 2017, 11(12), 12247

[14]

Zhou F, Liu Y, Shen X, et al. Low-voltage, optoelectronic CH3NH3PbI3– xClx memory with integrated sensing and logic operations. Adv Funct Mater, 2018, 28(15), 1800080

[15]

Stranks S D, Snaith H J. Metal-halide perovskites for photovoltaic and light-emitting devices. Nat Nanotechnol, 2015, 10(5), 391

[16]

Chen Q, De Marco N, Yang Y M, et al. Under the spotlight: The organic-inorganic hybrid halide perovskite for optoelectronic applications. Nano Today, 2015, 10(3), 355

[17]

Dong Q, Fang Y, Shao Y, et al. Electron-hole diffusion lengths > 175 μm in solution-grown CH3NH3PbI3 single crystals. Science, 2015, 347(6225), 967

[18]

Lee M M, Teuscher J, Miyasaka T, et al. Efficient hybrid solar cells based on meso-superstructure organometal halide perovskites. Science, 2012, 338(6107), 643

[19]

Fang Y, Dong Q, Shao Y, et al. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Nat Photonics, 2015, 9(10), 679

[20]

Shi D, Adinolfi V, Comin R, et al. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals. Science, 2015, 347(6221), 519

[21]

Li F, Wang H, Kufer D, et al. Ultrahigh carrier mobility achieved in photoresponsive hybrid perovskite films via coupling with single-walled carbon nanotubes. Adv Mater, 2017, 29(16), 1602432

[22]

Anand B, Sampat S, Danilov E O, et al. Broadband transient absorption study of photoexcitations in lead halide perovskites: Towards a multiband picture. Phys Rev B, 2016, 93(16), 161205

[23]

Tan Z K, Moghaddam R S, Lai M L, et al. Bright light-emitting diodes based on organometal halide perovskite. Nat Nanotechnol, 2014, 9(9), 687

[24]

Senanayak S P, Yang B, Thomas T H, et al. Understanding charge transport in lead iodide perovskite thin-film field-effect transistors. Sci Adv, 2017, 3(1), e1601935

[25]

Wang K, Wu C, Yang D, et al. Quasi-two-dimensional halide perovskite single crystal photodetector. ACS Nano, 2018, 12(5), 4919

[26]

Yang T Y, Gregori G, Pellet N, et al. The significance of ion conduction in a hybrid organic-inorganic lead-iodide-based perovskite photosensitizer. Angew Chem Int Ed, 2015, 54(27), 7905

[27]

Haruyama J, Sodeyama K, Han L, et al. First-principles study of ion diffusion in perovskite solar cell sensitizers. J Am Chem Soc, 2015, 137(32), 10048

[28]

Chua L. Memristor-the missing circuit element. IEEE Trans Circuit Theory, 1971, 18(5), 507

[29]

Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453(7191), 80

[30]

Yoon J H, Zhang J, Ren X, et al. Truly electroforming-free and low-energy memristors with preconditioned conductive tunneling paths. Adv Funct Mater, 2017, 27(35), 1702010

[31]

Ielmini D, Wong H S P. In-memory computing with resistive switching devices. Nat Electron, 2018, 1(6), 333

[32]

Xiao Z, Yuan Y, Shao Y, et al. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nat Mater, 2015, 14(2), 193

[33]

Xu J, Zhao X, Wang Z, et al. Biodegradable natural pectin-based flexible multilevel resistive switching memory for transient electronics. Small, 2019, 15(4), 1803970

[34]

Yan X, Wang K, Zhao J, et al. A new memristor with 2D Ti3C2T x MXene flakes as an artificial bio-synapse. Small, 2019, 15(25), 1900107

[35]

Yu F, Zhu L, Xiao H, et al. Restickable oxide neuromorphic transistors with spike-timing-dependent plasticity and pavlovian associative learning activities. Adv Funct Mater, 2018, 28(44), 1804025

[36]

Yan X, Li X, Zhou Z, et al. Flexible transparent organic artificial synapse based on the tungsten/egg albumen/indium tin oxide/polyethylene terephthalate memristor. ACS Appl Mater Interfaces, 2019, 11(20), 18654

[37]

Yan X, Zhao Q, Chen A P, et al. Vacancy-induced synaptic behavior in 2D WS2 nanosheet-based memristor for low-power neuromorphic computing. Small, 2019, 15(24), 1901423

[38]

Choi S, Tan S H, Li Z, et al. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations. Nat Mater, 2018, 17(4), 335

[39]

Yan X, Zhao J, Liu S, et al. Memristor with Ag-cluster-doped TiO2 films as artificial synapse for Neuroinspired computing. Adv Funct Mater, 2018, 28(1), 1705320

[40]

Zhu X, Li D, Liang X, et al. Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing. Nat Mater, 2019, 18(2), 141

[41]

Muenstermann R, Menke T, Dittmann R, et al. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices. Adv Mater, 2010, 22(43), 4819

[42]

Jeong H Y, Lee J Y, Choi S Y. Interface-engineered amorphous TiO2-based resistive memory devices. Adv Funct Mater, 2010, 20(22), 3912

[43]

Yang Y, Huang R. Probing memristive switching in nanoionic devices. Nat Electron, 2018, 1(5), 274

[44]

Budiman F, Hernowo D G O, Pandey R R, et al. Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption. Jpn J Appl Phys, 2018, 57(3S2), 03EA06

[45]

Chen J Y, Huang C W, Chiu C H, et al. Switching kinetic of VCM-based memristor: evolution and positioning of nanofilament. Adv Mater, 2015, 27(34), 5028

[46]

Liu Q, Sun J, Lv H, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte based ReRAM. Adv Mater, 2012, 24(14), 1844

[47]

Yang Y, Gao P, Li L, et al. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun, 2014, 5(1), 1

[48]

Yang Y, Lee J, Lee S, et al. Oxide resistive memory with functionalized graphene as built-in selector element. Adv Mater, 2014, 26(22), 3693

[49]

Kim S, Choi S H, Lu W. Comprehensive physical model of dynamic resistive switching in an oxide memristor. ACS Nano, 2014, 8(3), 2369

[50]

Xue W, Liu G, Zhong Z, et al. A 1D vanadium dioxide nanochannel constructed via electric-field-induced ion transport and its superior metal-insulator transition. Adv Mater, 2017, 29(39), 1702162

[51]

Wang Z Q, Xu H Y, Li X H, et al. Memristors: synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO Memristor. Adv Funct Mater, 2012, 22(13), 2758

[52]

Chang C F, Chen J Y, Huang C W, et al. Direct observation of dual-filament switching behaviors in Ta2O5-based memristors. Small, 2017, 13(15), 1603116

[53]

Yan X, Zhou Z, Ding B, et al. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure. J Mater Chem C, 2017, 5(9), 2259

[54]

Gao S, Liu G, Yang H, et al. An oxide Schottky junction artificial optoelectronic synapse. ACS Nano, 2019, 13(2), 2634

[55]

Tan H, Liu G, Zhu X, et al. An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions. Adv Mater, 2015, 27(17), 2797

[56]

Murphy E L, Good R H Jr. Thermionic emission, field emission, and the transition region. Phys Rev, 1956, 102(6), 1464

[57]

Emtage P R, Tantraporn W. Schottky emission through thin insulating films. Phys Rev Lett, 1962, 8(7), 267

[58]

Simmons J G. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. J Appl Phys, 1963, 34(9), 2581

[59]

Svensson C, Lundström I. Trap-assisted charge injection in MNOS structures. J Appl Phys, 1973, 44(10), 4657

[60]

Ma Y, Wang S, Zheng L, et al. Recent research developments of perovskite solar cells. Chin J Chem, 2014, 32(10), 957

[61]

Shi Z, Guo J, Chen Y, et al. Lead-free organic-inorganic hybrid Perovskites for photovoltaic applications: recent advances and perspectives. Adv Mater, 2017, 29(16), 1605005

[62]

Miyata A, Mitioglu A, Plochocka P, et al. Direct measurement of the exciton binding energy and effective masses for charge carriers in organic-inorganic tri-halide perovskites. Nat Phys, 2015, 11(7), 582

[63]

Stoumpos C C, Kanatzidis M G. Halide perovskites: poor man's high-performance semiconductors. Adv Mater, 2016, 28(28), 5778

[64]

Yao J S, Ge J, Han B N, et al. Ce3+-doping to modulate photoluminescence kinetics for efficient CsPbBr3 nanocrystals-based light-emitting diodes. J Am Chem Soc, 2018, 140(10), 3626

[65]

Swarnkar A, Ravi V K, Nag A. Beyond colloidal cesium lead halide perovskite nanocrystals: analogous metal halides and doping. ACS Energy Lett, 2017, 2(5), 1089

[66]

Liang J, Liu J, Jin Z. All-inorganic halide perovskites for optoelectronics: progress and prospects. Sol RRL, 2017, 1(10), 1700086

[67]

Yoo E J, Lyu M, Yun J H, et al. Resistive switching behavior in organic-inorganic hybrid CH3NH3PbI3– xClx perovskite for resistive random-access memory devices. Adv Mater, 2015, 27(40), 6170

[68]

Wang H, Kim D H. Perovskite-based photodetectors: materials and devices. Chem Soc Rev, 2017, 46(17), 5204

[69]

Zhou J, Huang J. Photodetectors based on organic-inorganic hybrid lead halide perovskites. Adv Sci, 2018, 5(1), 1700256

[70]

Choi J, Han J S, Hong K, et al. Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses. Adv Mater, 2018, 30(42), 1704002

[71]

Tress W. Metal halide perovskites as mixed electronic-ionic conductors: challenges and opportunities from hysteresis to memristivity. J Phys Chem Lett, 2017, 8(13), 3106

[72]

Ma Z, Li F, Qi G, et al. Structural stability and optical properties of two-dimensional perovskite-like CsPb2Br5 microplates in response to pressure. Nanoscale, 2019, 11(3), 820

[73]

Xing G, Mathews N, Sun S, et al. Long-range balanced electron- and hole-transport lengths in organic–inorganic CH3NH3PbI3. Science, 2013, 342(6156), 344

[74]

Weidman M C, Seitz M, Stranks S D, et al. Highly tunable colloidal perovskite nanoplatelets through variable cation, metal, and halide composition. ACS Nano, 2016, 10(8), 7830

[75]

Cuhadar C, Kim S G, Yang J M, et al. All-inorganic bismuth halide perovskite-like materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for low-voltage switching resistive memory. ACS Appl Mater Interfaces, 2018, 10(35), 29741

[76]

Acharyya P, Pal P, Samanta P K, et al. Single pot synthesis of indirect band gap 2D CsPb2Br5 nanosheets from direct band gap 3D CsPbBr3 nanocrystals and the origin of their luminescence properties. Nanoscale, 2019, 11(9), 4001

[77]

Iwahara H. Ionic conduction in perovskite-type compounds. In: Perovskite Oxide for Solid Oxide Fuel Cells. Boston: Springer, 2009, 45

[78]

Li C, Tscheuschner S, Paulus F, et al. Iodine migration and its effect on hysteresis in perovskite solar cells. Adv Mater, 2016, 28(12), 2446

[79]

Leng K, Abdelwahab I, Verzhbitskiy I, et al. Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation. Nat Mater, 2018, 17(10), 908

[80]

Qian L, Sun Y, Wu M, et al. A lead-free two-dimensional perovskite for a high-performance flexible photoconductor and a light-stimulated synaptic device. Nanoscale, 2018, 10(15), 6837

[81]

Prezioso M, Merrikh-Bayat F, Hoskins B D, et al. Training and operation of an integrated neuromorphic network based on metal–oxide memristors. Nature, 2015, 521(7550), 61

[82]

Liu S J, Lin Z H, Zhao Q, et al. Flash-memory effect for polyfluorenes with on-chain iridium (III) complexes. Adv Funct Mater, 2011, 21(5), 979

[83]

Zhao L, Wang K, Wei W, et al. High-performance flexible sensing devices based on polyaniline/MXene nanocomposites. InfoMat, 2019, 1(3), 407

[84]

Lin G, Lin Y, Cui R, et al. An organic-inorganic hybrid perovskite logic gate for better computing. J Mater Chem C, 2015, 3(41), 10793

[85]

Yan K, Peng M, Yu X, et al. High-performance perovskite memristor based on methyl ammonium lead halides. J Mater Chem C, 2016, 4(7), 1375

[86]

Yang J M, Choi E S, Kim S Y, et al. Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing. Nanoscale, 2019, 11(13), 6453

[87]

Choi J, Park S, Lee J, et al. Organolead halide perovskites for low operating voltage multilevel resistive switching. Adv Mater, 2016, 28(31), 6562

[88]

Yang J M, Kim S G, Seo J Y, et al. 1D hexagonal HC(NH2)2PbI3 for multilevel resistive switching nonvolatile memory. Adv Electron Mater, 2018, 4(9), 1800190

[89]

Wang W, Xu J, Ma H, et al. Insertion of nanoscale AgInSbTe layer between the Ag electrode and the CH3NH3PbI3 electrolyte layer enabling enhanced multilevel memory. ACS Appl Nano Mater, 2019, 2(1), 307

[90]

Guan X, Hu W, Haque M A, et al. Light-responsive ion-redistribution-induced resistive switching in hybrid perovskite Schottky junctions. Adv Funct Mater, 2018, 28(3), 1704665

[91]

Hwang B, Lee J S. A strategy to design high-density nanoscale devices utilizing vapor deposition of metal halide perovskite materials. Adv Mater, 2017, 29(29), 1701048

[92]

Zhu X, Lee J, Lu W D. Iodine vacancy redistribution in organic–inorganic halide perovskite films and resistive switching effects. Adv Mater, 2017, 29(29), 1700527

[93]

Lin C C, Tu B C, Lin C H, et al. Resistive switching mechanisms of V-doped SrZrO3 memory films. IEEE Electron Device Lett, 2006, 27(9), 725

[94]

Yoo E, Lyu M, Yun J H, et al. Bifunctional resistive switching behavior in an organolead halide perovskite-based Ag/CH3NH3PbI3– xClx/FTO structure. J Mater Chem C, 2016, 4(33), 7824

[95]

Xiao Z, Huang J. Energy-efficient hybrid perovskite memristors and synaptic devices. Adv Electron Mater, 2016, 2(7), 1600100

[96]

Yan X, Zhang L, Chen H, et al. Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning. Adv Funct Mater, 2018, 28(40), 1803728

[97]

Yan X, Pei Y, Chen H, et al. Self-assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors. Adv Mater, 2019, 31(7), 1805284

[98]

Xu W, Cho H, Kim Y H, et al. Organometal halide perovskite artificial synapses. Adv Mater, 2016, 28(28), 5916

[99]

Gholipour B, Bastock P, Craig C, et al. Amorphous metal-sulphide microfibers enable photonic synapses for brain-like computing. Adv Opt Mater, 2015, 3(5), 635

[100]

Pei K, Ren X, Zhou Z, et al. A high-performance optical memory array based on inhomogeneity of organic semiconductors. Adv Mater, 2018, 30(13), 1706647

[101]

Gorecki J, Apostolopoulos V, Ou J Y, et al. Optical gating of graphene on photoconductive Fe: LiNbO3. ACS Nano, 2018, 12(6), 5940

[102]

Shen Y, Harris N C, Skirlo S, et al. Deep learning with coherent nanophotonic circuits. Nat Photonics, 2017, 11(7), 441

[103]

Dai S, Zhao Y, Wang Y, et al. Recent advances in transistor-based artificial synapses. Adv Funct Mater, 2019, 29(42), 1903700

[104]

Wu Y, Wei Y, Huang Y, et al. Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors. Nano Res, 2017, 10(5), 1584

[105]

Yizhar O, Fenno L E, Davidson T J, et al. Optogenetics in neural systems. Neuron, 2011, 71(1), 9

[106]

Liu X, Ramirez S, Pang P T, et al. Optogenetic stimulation of a hippocampal engram activates fear memory recall. Nature, 2012, 484(7394), 381

[107]

Zhu X, Lu W D. Optogenetics-inspired tunable synaptic functions in memristors. ACS Nano, 2018, 12(2), 1242

[108]

Fenno L, Yizhar O, Deisseroth K. The development and application of optogenetics. Annu Rev Neurosci, 2011, 34, 389

[109]

Kramer R H, Mourot A, Adesnik H. Optogenetic pharmacology for control of native neuronal signaling proteins. Nat Neurosci, 2013, 16(7), 816

[110]

Sun Y, Qian L, Xie D, et al. Photoelectric synaptic plasticity realized by 2D perovskite. Adv Funct Mater, 2019, 29(28), 1902538

[111]

Jeon N J, Noh J H, Yang W S, et al. Compositional engineering of perovskite materials for high-performance solar cells. Nature, 2015, 517(7535), 476

[112]

Lim K G, Ahn S, Kim Y H, et al. Universal energy level tailoring of self-organized hole extraction layers in organic solar cells and organic-inorganic hybrid perovskite solar cells. Energy Environ Sci, 2016, 9(3), 932

[113]

Cheng C, Zhu C, Huang B, et al. Processing halide perovskite materials with semiconductor technology. Adv Mater Technol, 2019, 4(7), 1800729

[114]

Chamlagain B, Li Q, Ghimire N J, et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. ACS Nano, 2014, 8(5), 5079

[115]

Skoblin G, Sun J, Yurgens A. Encapsulation of graphene in parylene. Appl Phys Lett, 2017, 110(5), 053504

[116]

Kim M, Shah A, Li C, et al. Direct transfer of wafer-scale graphene films. 2D Mater, 2017, 4(3), 035004

[117]

Yang X, Wu J, Liu T, et al. Patterned perovskites for optoelectronic applications. Small Methods, 2018, 2(10), 1800110

[118]

Wang G, Li D, Cheng H C, et al. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics. Sci Adv, 2015, 1(9), e1500613

[119]

He X, Liu P, Zhang H, et al. Patterning multicolored microdisk laser arrays of cesium lead halide perovskite. Adv Mater, 2017, 29(12), 1604510

[120]

Zhao P, Kim B J, Ren X, et al. Antisolvent with an ultrawide processing window for the one-step fabrication of efficient and large-area perovskite solar cells. Adv Mater, 2018, 30(49), 1802763

[121]

Ren Y K, Ding X H, Wu Y H, et al. Temperature-assisted rapid nucleation: a facile method to optimize the film morphology for perovskite solar cells. J Mater Chem A, 2017, 5(38), 20327

[122]

Sanchez S, Christoph N, Grobety B, et al. Efficient and stable inorganic perovskite solar cells manufactured by pulsed flash infrared annealing. Adv Energy Mater, 2018, 8(30), 1802060

[123]

Li D, Cheng H C, Wang Y, et al. The effect of thermal annealing on charge transport in organolead halide perovskite microplate field-effect transistors. Adv Mater, 2017, 29(4), 1601959

[124]

Wang Y, Li M, Li H, et al. Patterned wettability surface for competition-driving large-grained perovskite solar cells. Adv Energy Mater, 2019, 9(25), 1900838

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G Cao, C T Cheng, H J Zhang, H Zhang, R Chen, B J Huang, X B Yan, W H Pei, H D Chen, The application of halide perovskites in memristors[J]. J. Semicond., 2020, 41(5): 051205. doi: 10.1088/1674-4926/41/5/051205.

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Manuscript received: 28 February 2020 Manuscript revised: 29 March 2020 Online: Accepted Manuscript: 15 April 2020 Uncorrected proof: 24 April 2020 Published: 13 May 2020

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