Citation: 
Jinye Wang, Jun Liu, Zhenxin Zhao. A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate[J]. Journal of Semiconductors, 2024, 45(5): 052302. doi: 10.1088/16744926/45/5/052302
J Y Wang, J Liu, and Z X Zhao, A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate[J]. J. Semicond., 2024, 45(5), 052302 doi: 10.1088/16744926/45/5/052302
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A novel smallsignal equivalent circuit model for GaN HEMTs incorporating a dualfieldplate
doi: 10.1088/16744926/45/5/052302
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Abstract
An accurate and novel smallsignal equivalent circuit model for GaN highelectronmobility transistors (HEMTs) is proposed, which considers a dualfieldplate (FP) made up of a gateFP and a sourceFP. The equivalent circuit of the overall model is composed of parasitic elements, intrinsic transistors, gateFP, and sourceFP networks. The equivalent circuit of the gateFP is identical to that of the intrinsic transistor. In order to simplify the complexity of the model, a series combination of a resistor and a capacitor is employed to represent the sourceFP. The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit. The verification is carried out on a 4 × 250 μm GaN HEMT device with a gateFP and a sourceFP in a 0.45 μm technology. Compared with the classic model, the proposed novel smallsignal model shows closer agreement with measured Sparameters in the range of 1.0 to 18.0 GHz. 
References
[1] He J Q, Cheng W C, Wang Q, et al. Recent advances in GaNbased power HEMT devices. Adv Elect Mater, 2021, 7, 2001045 doi: 10.1002/aelm.202001045[2] BahatTreidel E, Hilt O, Brunner F, et al. AlGaN/GaN/AlGaN DHHEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs). IEEE Trans Electron Devices, 2010, 57, 1208 doi: 10.1109/TED.2010.2045705[3] Hu Q Y, Zeng F M, Cheng W C, et al. Reducing dynamic onresistance of pGaN gate HEMTs using dual field plate configurations. IEEE International Symposium on the Phys and Failure Analysis of Integrated Circuits (IPFA), 2020, 1 doi: 10.1109/IPFA49335.2020.9260581[4] Wu Y F, Saxler A, Moore M, et al. 30W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett, 2004, 25, 117 doi: 10.1109/LED.2003.822667[5] Xie G, Xu E, Lee J M, et al. Breakdownvoltageenhancement technique for RFbased AlGaN/GaN HEMTs with a sourceconnected airbridge field plate. IEEE Electron Device Lett, 2012, 33, 670 doi: 10.1109/LED.2012.2188492[6] Mao W, Fan J S, Du M, et al. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a Tshaped fieldplate. Chinese Phys B, 2016, 25, 127305 doi: 10.1088/16741056/25/12/127305[7] Boles T, Carlson D, Xia L, et al. Effect of multifield plates on the reverse breakdown and leakage characteristics of GaNonsilicon HEMTs. Int Conference on Compound Semicond Manufacturing Technology, Denver, Colorado, 2014, 104[8] Amit M, Rawal D S, Sharma S, et al. Design and fabrication of multifinger field plate for enhancement of AlGaN/GaN HEMT breakdown voltage. Def Sci J, 2018, 68, 290 doi: 10.14429/dsj.68.12134[9] Neha, Kumari V, Gupta M, et al. TCADbased optimization of field plate length & passivation layer of AlGaN/GaN HEMT for higher cutoff frequency & breakdown voltage. IETE Tech Rev, 2022, 39, 63 doi: 10.1080/02564602.2020.1824624[10] Liu S J, Duan X L, Wang S L, et al. Optimization of dual field plate AlGaN/GaN HEMTs using artificial neural networks and particle swarm optimization algorithm. IEEE Trans Device Mater Reliab, 2023, 23, 204 doi: 10.1109/TDMR.2023.3246053[11] Marinković Z, Crupi G, Caddemi A, et al. A review on the artificial neural network applications for smallsignal modeling of microwave FETs. Int J Numerical Modelling, 2020, 33, e2668 doi: 10.1002/jnm.2668[12] Khusro A, Husain S, Hashmi M S, et al. A reliable and fast ANN based behavioral modeling approach for GaN HEMT. Int Conference on Synthesis, Modeling, Analysis and Simulation Methods and Appl Circuit Design (SMACD), Lausanne, Switzerland, 2019, 277 doi: 10.1109/SMACD.2019.8795247[13] Khusro A, Husain S, Hashmi M S, et al. Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach. Int J RF Microw Comput Aided Eng, 2020, 30, e22112 doi: 10.1002/mmce.22112[14] Khusro A, Husain S, Hashmi M S, et al. A generic and efficient globalized kernel mappingbased smallsignal behavioral modeling for GaN HEMT. IEEE Access, 2020, 8, 195046 doi: 10.1109/ACCESS.2020.3033788[15] Guan R L, Zhu H S, Che W Q, et al. An improved parameter extraction approach for GaN HEMT smallsignal modelling. 2020 IEEE MTTS International Wireless Symposium (IWS), Harbin, China, 2022, 1 doi: 10.1109/IWS55252.2022.9977881[16] Fan Q, Leach J H, Morkoc H. Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET. Proc IEEE, 2010, 98, 1140 doi: 10.1109/JPROC.2010.2044630[17] Majumder A, Chatterjee S, Chatterjee S, et al. Optimization of smallsignal model of GaN HEMT by using evolutionary algorithms. IEEE Microw Wirel Compon Lett, 2017, 27, 362 doi: 10.1109/LMWC.2017.2678437[18] Du J F, Wang K, Yin C G, et al. Small signal modeling of 90 nm gatelength AlGaN/GaN HEMTs considering mesa edge effects. 2014 IEEE International Conference on Electron Devices and SolidState Circuits, Chengdu, China, 2014, 1 doi: 10.1109/EDSSC.2014.7061240[19] Jia Y H, Xu Y H, Wu Y Q, et al. A robust smallsignal equivalent circuit model for AlGaN/GaN HEMTs up to 110 GHz. 2016 IEEE MTTS International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWSAMP), Chengdu, China, 2016, 1 doi: 10.1109/IMWSAMP.2016.7588419[20] Pei Y, AlSaman A A, Yin C G, et al. An intrinsic smallsignal equivalent circuit model for AlGaN/GaN HEMT considering the momentum balance equation. IEEE J Electron Devices Soc, 2021, 9, 1060 doi: 10.1109/JEDS.2021.3124327[21] Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Trans Electron Devices, 2001, 48, 1515 doi: 10.1109/16.936500[22] Wen Z, Xu Y H, Wang C S, et al. An efficient parameter extraction method for GaN HEMT smallsignal equivalent circuit model. Int J Numerical Modelling, 2017, 30, e2127 doi: 10.1002/jnm.2127[23] White P M, Healy R M. Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements. IEEE Microw Guid Wave Lett, 1993, 3, 453 doi: 10.1109/75.251398[24] Jarndal A, Kompa G. A new smallsignal modeling approach applied to GaN devices. IEEE Trans Microw Theory Tech, 2005, 53, 3440 doi: 10.1109/TMTT.2005.857332[25] Liu J, Ren K, Sun L L, et al. A novel smallsignal model for bulk FinFETs accommodating selfheating behaviors. IEEE Electron Device Lett, 2017, 38, 839 doi: 10.1109/LED.2017.2707283[26] Wang J Y, Liu J, Chen Z F, et al. An accurate parameter extraction method for small signal model of CNFET. Int J Numerical Modelling, 2021, 34, e2896 doi: 10.1002/jnm.2896 
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