Chin. J. Semicond. > Volume 8 > Issue 1 > Article Number: 84

GaAs MESFET电子辐照效应的研究

吴凤美 , 赖启基 , 徐岭 and 龚邦瑞

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Abstract: 本文研究了GaAs MESFET的12MeV电子辐照效应.在n型VPE GaAs有源层中电子辐照感生了E_1~'(E_c-0.38eV)、E_2~'(E_c-0.57eV)、E_s~'(E_c-0.74eV)缺陷.研究表明,GaAsMFSFET参数的变化主要是由于载流子去除效应.对器件载流子去除率进行了计算,其值在8-30cm~(-1)范围内.迁移率退化因子是比较小的,在室温大约为10~(-17)cm~2量级.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1987

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