Chin. J. Semicond. > Volume 10 > Issue 10 > Article Number: 739

Ga_(0.47)In_(0.53)As/SiO_2与Ga_(0.47)In_(0.53)As/Al_2O_3的界面性质

江若琏 , 郑有炓 , 傅浩 , 邵建军 and 黄善祥

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Abstract: 本文研究了GaInAs/SiO_2与GaInAs/Al_2O_3的界面性质.采用PECVD技术以TEOS为源以及采用MOCVD技术以Al(OC_3H_1)_3为源在n~+-InP衬底的n-Ga_(0.47) In_(0.33)As外延层上淀积了/SiO_2和Al_2O_3,制备成MIS结构.结果表明这些MIS结构具有良好的C-V特性,SiO_2/GaInAs界面在密度最低达 2.4×10~(11)cm~2·eV~(?),氧化物陷阱电荷密度达10~(?)~10~(10)cm~2,观察到GaInAs/SiO,结构中的深能级位置为E_c-E_T=0.39eV.GaInAs/Al_2O_3结构中的深能级位置为E_c=E_T=0.41eV.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1989

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