Chin. J. Semicond. > Volume 10 > Issue 10 > Article Number: 799

一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器

朱龙德 , G.A.B.Feak , J.M.Ballantyne , D.K.Wagner and P.L.Tihanyi

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Abstract: 本文描述一种由MOCVD生长的GaAs/GaAlAs 分别限制单量子阱片子制作的锁相列阵大功率激光器.由十个单横模器件耦合而成的列阵器件,其阈值电流为67mA,线性输出功率大于500mW,微分量子效率达60%.列阵器件由强耦合区和弱耦合区构成,考察了强耦合区的几何结构对耦合模即输出远场分布的影响.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1989

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