Chin. J. Semicond. > Volume 18 > Issue 2 > Article Number: 124

低压高速CMOS/SOI器件和电路的研制

张兴 , 奚雪梅 and 王阳元

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Abstract: 采用全耗尽CMOS/SIMOX工艺成功地研制出了沟道长度为0.5μm的可在1.5V和3.0V电源电压下工作的SOI器件和环形振荡器电路.在1.5V和3.0V电源电压时环振的单级门延迟时间分别为840ps和390ps.与体硅器件相比,全耗尽CMOS/SIMOX电路在低压时的速度明显高于体硅器件,亚微米全耗尽CMOS/SOI技术是低压低功耗和超高速集成电路的理想选择.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1997

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